Q68000-A6476 [INFINEON]
NPN Silicon Darlington Transistors; NPN硅达林顿晶体管
| 型号： | Q68000-A6476 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Darlington Transistors |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Darlington Transistors
SMBTA 13
SMBTA 14
● High DC current gain
● High collector current
● Collector-emitter saturation voltage
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBTA 13
SMBTA 14
s1M
s1N
Q68000-A6475
Q68000-A6476
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
30
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
30
V
10
I
I
I
I
C
300
500
100
200
330
150
mA
Peak collector current
Base current
CM
B
Peak base current
Total power dissipation, T
Junction temperature
BM
S
= 81 ˚C
P
tot
mW
˚C
Tj
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 280
≤ 210
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBTA 13
SMBTA 14
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CE0
(BR)CB0
(BR)EB0
30
30
10
–
–
–
–
–
–
–
V
I
C
= 10 µA
Collector-base breakdown voltage
= 10 µA
Emitter-base breakdown voltage
= 10 µA
Collector-base cutoff current
–
IC
–
IE
I
CB0
EB0
100
100
nA
–
VCB = 30 V
Emitter-base cutoff current
I
–
VEB = 10 V
DC current gain
h
FE
= 10 mA, VCE = 5 V1)
SMBTA 13
SMBTA 14
SMBTA 13
SMBTA 14
5000
–
–
–
–
–
I
C
C
10000 –
10000 –
20000 –
I
= 100 mA, VCE = 5 V1)
Collector-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
CEsat
BEsat
–
–
1.5
V
IC
B
Base-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
–
–
2
IC
B
AC characteristics
Transition frequency
fT
125
–
–
MHz
IC
= 50 mA, VCE = 5 V, f = 20 MHz
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
SMBTA 13
SMBTA 14
Total power dissipation Ptot = f (T
A
*; TS
)
Capacitance CCB0 = f (VCB0)
* Package mounted on epoxy
C
EB0 = f (VEB0
)
f = 1 MHz
Permissible pulse load Ptot max / Ptot DC = f (t
p)
Transition frequency f
CE = 5 V, f = 20 MHz
T
= f (I )
C
V
Semiconductor Group
3
SMBTA 13
SMBTA 14
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBE sat
)
IC
= f (VCE sat)
h
FE = 1000
hFE = 1000
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CB = 30 V
VCE = 5 V
Semiconductor Group
4
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