SGP20N60HSXK [INFINEON]
暂无描述;
| 型号： | SGP20N60HSXK |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 电动机控制 瞄准线 双极性晶体管 栅 局域网 |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SIGC18T60SNC
IGBT Chip in NPT-technology
C
FEATURES:
This chip is used for:
SGP20N60
·
·
·
·
·
600V NPT technology
100µm chip
short circuit prove
positive temperature coefficient
easy paralleling
·
Applications:
drives
G
·
Chip Type
VCE
ICn
20A
20A
Die Size
4.3 x 4.3 mm2
4.3 x 4.3 mm2
Package
Ordering Code
Q67041-S2856-
A001
Q67041-S2856-
A002
SIGC18T60SNC
600V
sawn on foil
SIGC18T60SNC
600V
unsawn
MECHANICAL PARAMETER:
mm2
Raster size
4.3 x 4.3
18.49 / 14.3
2.48 x 2.98
0.7 x 1.08
100
Area total / active
Emitter pad size
Gate pad size
Thickness
µm
mm
deg
Wafer size
150
Flat position
270
Max.possible chips per wafer
Passivation frontside
Emitter metallization
796
Photoimide
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Collector metallization
Die bond
electrically conductive glue or solder
Wire bond
Al, £500µm
Reject Ink Dot Size
Æ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
SIGC18T60SNC
MAXIMUM RATINGS:
Parameter
Symbol
VCE
Value
Unit
Collector-emitter voltage, T =25 °C
600
V
A
j
1 )
DC collector current, limited by T
IC
jmax
Pulsed collector current, tp limited by T
Gate emitter voltage
Icpuls
VGE
60
±20
A
jmax
V
Operating junction and storage temperature
1 ) depending on thermal properties of assembly
Tj, Ts t g
-55 ... +150
°C
STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified:
j
Value
typ.
Parameter
Symbol
Conditions
Unit
min.
600
1.6
3
max.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
V(BR)CES
VCE(sat)
VGE(th)
ICES
VGE=0V, IC=500µA
VGE=15V, IC=20A
IC=500µA, VGE=VCE
VCE=600V, VGE=0V
VCE=0V, VGE=20V
1.9
4
2.5
5
V
70
µA
nA
IGES
120
DYNAMIC CHARACTERISTICS (tested at component):
Value
Parameter
Symbol
Unit
Conditions
min. typ.
max.
Input capacitance
Ciss
Coss
Crss
VC E=25V
VGE=0V
f=1MHz
-
-
-
1100 1320 pF
Output capacitance
107
63
128
75
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Value
Parameter
Symbol
Unit
Conditions*
min. typ.
max.
ns
Tj=150° C
Turn-on delay time
Rise time
td(on)
tr
td(of f )
tf
-
-
-
-
36
30
46
VC C =400V
IC =20A
36
300
76
VGE=+15/0V
Turn-off delay time
Fall time
250
63
RG=16W
* switching conditions different to 600V LowLoss, under comparable switching conditions 40% faster turnoff
than LowLoss. Values also influenced by parasitic L- and C- in measurement and package.
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
SIGC18T60SNC
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
SIGC18T60SNC
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
SGP20N60
Package :TO220
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2002
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
相关型号：
SGP20N60HS_09
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
INFINEON
SGP20N60RUFJ69Z
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN
FAIRCHILD
SGP20N60RUFTU
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
FAIRCHILD
SGP23N60UFDTU
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
FAIRCHILD
SGP23N60UFJ69Z
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明