SKB02N60 [INFINEON]

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode; 在NPT技术的快速IGBT具有柔软，快速恢复反并联二极管EMCON


型号：	SKB02N60
厂家：	Infineon
描述：	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 在NPT技术的快速IGBT具有柔软，快速恢复反并联二极管EMCON 二极管双极性晶体管
文件：	总13页 (文件大小：398K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SKP02N60

SKB02N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower E_offcompared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

• Very soft, fast recovery anti-parallel EmCon diode

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

T_j

Package

Ordering Code

SKP02N60

SKB02N60

600V

2.2V

TO-220AB

TO-263AB

Q67040-S4214

Q67040-S4215

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

6.0

2.9

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_{Cpul s}

Turn off safe operating area

V_CE≤ 600V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

6.0

2.9

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

I_{Fpul s}

V_{G E}

t_SC

±20

Gate-emitter voltage

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

µs

P_{t ot}

T_C= 25°C

Operating junction and storage temperature

T_j, T_stg

-55...+150

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Jul-02

SKP02N60

SKB02N60

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R_{t hJC}

R_{t hJCD}

R_{t hJA}

4.2

K/W

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

SMD version, device on PCB¹⁾

TO-220AB

TO-263AB

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}

600

V_{G E}=0V, I_C=500µA

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=2A

T_j=25°C

1.7

1.9

2.2

2.4

2.7

T_j=150°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=2.9A

T_j=25°C

1.2

1.4

1.8

1.25

1.65

T_j=150°C

Gate-emitter threshold voltage

V_{G E(t h)}

I_CES

I_C=150µA,V_CE=V_GE

V_CE=600V,V_GE=0V

T_j=25°C

Zero gate voltage collector current

µA

250

T_j=150°C

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CE=0V,V_{G E}=20V

V_CE=20V, I_C=2A

100

1.6

Dynamic Characteristic

Input capacitance

C_iss

V_CE=25V,

142

170

_{G E}=0V,

Output capacitance

C_oss

C_rss

f=1MHz

Reverse transfer capacitance

Gate charge

Q_Gate

V_CC=480V, I_C=2A

_{G E}=15V

Internal emitter inductance

L_E

TO-220AB

measured 5mm (0.197 in.) from case

Short circuit collector current²⁾

I_{C( SC)}

V_{G E}=15V,t_SC≤10µs

V_CC≤ 600V,

T_j≤ 150°C

¹⁾Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Jul-02

SKP02N60

SKB02N60

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

t_d(on)

t_r

t_{d( off)}

t_f

T_j=25°C,

_CC=400V,I_C=2A,

_{G E}=0/15V,

Turn-off delay time

Fall time

259

311

R_G=118Ω,

L_σ=180nH,

C_σ=180pF

Turn-on energy

E_on

E_off

E_{t s}

0.036

0.028

0.064

0.041 mJ

0.036

Energy losses include

“tail” and diode

reverse recovery.

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

0.078

t_rr

t_S

130

T_j=25°C,

V_R=200V, I_F=2.9A,

di_F/dt=200A/µs

t_F

118

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_rrm

1.9

180

Diode peak rate of fall of reverse

di_rr/dt

A/µs

recovery current during t_b

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

T_j=150°C

_CC=400V,

I_C=2A,

_{G E}=0/15V,

t_d(on)

t_r

t_{d( off)}

t_f

Turn-off delay time

Fall time

287

344

R_G=118Ω,

L_σ=180nH,

Turn-on energy

Turn-off energy

Total switching energy

E_on

E_off

E_{t s}

0.054

0.043

0.097

0.062 mJ

0.056

C_σ=180pF

Energy losses include

“tail” and diode

reverse recovery.

0.118

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t_rr

t_S

150

T_j=150°C

V_R=200V, I_F=2.9A,

di_F/dt=200A/µs

t_F

131

150

3.8

200

Diode reverse recovery charge

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

A/µs

recovery current during t_b

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Jul-02

SKP02N60

SKB02N60

16A

14A

12A

10A

I_c

t_p=2µs

10A

15µs

50µs

200µs

T_C=80°C

0.1A

0.01A

T_C=110°C

1ms

I_c

10Hz

10V

100V

1000V

100Hz

1kHz

10kHz 100kHz

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency

Figure 2. Safe operating area

(D = 0, T_C= 25°C, T_j≤ 150°C)

(T_j≤ 150°C, D = 0.5, V_CE= 400V,

V_GE= 0/+15V, R_G= 118Ω)

35W

30W

25W

20W

15W

10W

25°C

50°C

75°C 100°C 125°C

50°C

75°C 100°C 125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation (IGBT) as a

function of case temperature

(T_j≤ 150°C)

Figure 4. Collector current as a function of

case temperature

(V_GE≤ 15V, T_j≤ 150°C)

Jul-02

SKP02N60

SKB02N60

V_GE=20V

15V

13V

11V

V_GE=20V

15V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

Figure 6. Typical output characteristics

(T_j= 25°C)

(T_j= 150°C)

4.0V

T_j=+25°C

3.5V

-55°C

+150°C

I_C= 4A

3.0V

2.5V

I_C= 2A

2.0V

1.5V

1.0V

10V

-50°C

0°C

50°C 100°C 150°C

V_GE, GATE-EMITTER VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristics

Figure 8. Typical collector-emitter

(V_CE= 10V)

saturation voltage as a function of junction

temperature

(V_GE= 15V)

Jul-02

SKP02N60

SKB02N60

t_d(off)

t_f

100ns

t_d(on)

t_r

10ns

0Ω

100Ω

200Ω

300Ω

400Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_j= 150°C, V_CE= 400V,

V_GE= 0/+15V, I_C= 2A,

V_GE= 0/+15V, R_G= 118Ω,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

t_d(off)

100ns

max.

t_f

3.5V

3.0V

2.5V

2.0V

t_d(on)

typ.

min.

t_r

10ns

0°C

50°C

100°C

150°C

-50°C

0°C

50°C 100°C 150°C

T_j, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 2A, R_G= 118Ω,

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(I_C= 0.15mA)

Dynamic test circuit in Figure E)

Jul-02

SKP02N60

SKB02N60

0.2mJ

*) E_onand E_tsinclude losses

due to diode recovery.

0.2mJ

0.1mJ

0.0mJ

E_ts*

0.1mJ

E_on*

E_off

0.0mJ

0Ω

100Ω

200Ω

300Ω

400Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_j= 150°C, V_CE= 400V,

V_GE= 0/+15V, I_C= 2A,

V_GE= 0/+15V, R_G= 118Ω,

Dynamic test circuit in Figure E)

0.2mJ

*) E_onand E_tsinclude losses

due to diode recovery.

D=0.5

0.2

10⁰K/W

E_ts*

0.1

0.05

E_on*

0.1mJ

0.02

R , ( K / W )

1.026

1.3

1.69

0.183

τ , ( s )

10^-1K/W

0.035

3.62*10^-3

4.02*10^-4

4.21*10^-5

0.01

E_off

R₁

R₂

10^-2K/W

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

0.0mJ

0°C

50°C

100°C

150°C

1µs

10µs 100µs 1ms 10ms 100ms 1s

t_p, PULSE WIDTH

T_j, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, V_CE= 400V, V_GE= 0/+15V,

I_C= 2A, R_G= 118Ω,

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Dynamic test circuit in Figure E)

Jul-02

SKP02N60

SKB02N60

25V

20V

15V

10V

C_iss

100pF

120V

480V

C_oss

10pF

C_rss

0nC

5nC

10nC

15nC

10V

20V

30V

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(I_C= 2A)

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(V_GE= 0V, f = 1MHz)

25µs

40A

30A

20A

10A

20µs

15µs

10µs

5µs

0µs

10V

11V

12V

13V

14V

15V

10V

12V

14V

16V

18V

20V

V_GE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE= 600V, start at T_j= 25°C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(V_CE≤ 600V,T_j= 150°C)

Jul-02

SKP02N60

SKB02N60

500ns

400ns

300ns

200ns

100ns

0ns

280nC

240nC

200nC

160nC

120nC

80nC

I_F= 4A

I_F= 2A

I_F= 1A

I_F= 2A

I_F= 1A

40nC

0nC

20A/µs 60A/µs 100A/µs 140A/µs 180A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(V_R= 200V, T_j= 125°C,

di_F/dt, DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(V_R= 200V, T_j= 125°C,

Dynamic test circuit in Figure E)

250A/µs

200A/µs

150A/µs

100A/µs

50A/µs

0A/µs

I_F= 4A

I_F= 2A

I_F= 1A

20A/µs

60A/µs

100A/µs 140A/µs 180A/µs

20A/µs

60A/µs

100A/µs

140A/µs

180A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(V_R= 200V, T_j= 125°C,

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

Dynamic test circuit in Figure E)

(V_R= 200V, T_j= 125°C,

Dynamic test circuit in Figure E)

Jul-02

SKP02N60

SKB02N60

2.5V

2.0V

1.5V

1.0V

I_F= 4A

I_F= 2A

150°C

100°C

25°C

-55°C

0.0V

0.5V

1.0V

1.5V

2.0V

-40°C 0°C

40°C 80°C 120°C

V_F, FORWARD VOLTAGE

T_j, JUNCTION TEMPERATURE

Figure 25. Typical diode forward current as

a function of forward voltage

Figure 26. Typical diode forward voltage as

a function of junction temperature

10¹K/W

D=0.5

0.2

10⁰K/W

0.1

0.05

R , ( K / W )

0.830

2.240

τ , ( s ) =

6.40*10^-3

8.79*10^-4

1.19*10^-4

0.02

0.01

3.930

10^-1K/W

R₁

R₂

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

10^-2K/W

1µs

10µs 100µs 1ms 10ms 100ms

t_p, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = t_p/ T)

Jul-02

SKP02N60

SKB02N60

dimensions

[mm]

TO-220AB

symbol

[inch]

min

9.70

14.88

0.65

3.55

2.60

6.00

13.00

4.35

0.38

0.95

max

10.30

15.95

0.86

3.89

3.00

6.80

14.00

4.75

0.65

1.32

min

max

0.3819

0.5858

0.0256

0.1398

0.1024

0.2362

0.5118

0.1713

0.0150

0.0374

0.4055

0.6280

0.0339

0.1531

0.1181

0.2677

0.5512

0.1870

0.0256

0.0520

2.54 typ.

0.1 typ.

4.30

4.50

1.40

2.72

0.1693

0.0461

0.0906

0.1772

0.0551

0.1071

1.17

2.30

TO-263AB (D²Pak)

dimensions

symbol

[mm]

[inch]

min

9.80

0.70

1.00

1.03

max

10.20

1.30

1.60

1.07

min

max

0.3858

0.0276

0.0394

0.0406

0.4016

0.0512

0.0630

0.0421

2.54 typ.

0.65 0.85

5.08 typ.

0.1 typ.

0.0256

0.0335

0.2 typ.

4.30

4.50

1.37

9.45

2.50

0.1693

0.0461

0.3563

0.0906

0.1772

0.0539

0.3720

0.0984

1.17

9.05

2.30

15 typ.

0.5906 typ.

0.00

4.20

0.20

5.20

0.0000

0.1654

0.0079

0.2047

8° max

2.40

0.40

3.00

0.60

0.0945

0.0157

0.1181

0.0236

10.80

1.15

6.23

4.60

9.40

16.15

0.4252

0.0453

0.2453

0.1811

0.3701

0.6358

Jul-02

SKP02N60

SKB02N60

i,v

=t +t

S F

di /dt

r r

=Q +Q

r r

10% I

r r m

di /dt

r r

r r m

90% I

Figure C. Definition of diodes

switching characteristics

τ₁

r₁

τ₂

r ₂

τ_n

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses

Figure E. Dynamic test circuit

Leakage inductance L_σ=180nH

and Stray capacity C_σ=180pF.

Jul-02

SKP02N60

SKB02N60

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Jul-02

SKB02N60 [INFINEON]

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