SMBT3946DW1T1G [ONSEMI]
NPN PNP Bipolar Transistor;
| 型号： | SMBT3946DW1T1G |
| 厂家： | 
ONSEMI |
| 描述： | NPN PNP Bipolar Transistor 放大器 光电二极管 小信号双极晶体管 |
| 文件： | 总12页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBT3946DW1T1
Dual General Purpose
Transistor
The MBT3946DW1T1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low−power surface mount
applications where board space is at a premium.
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(3)
(2)
(1)
Q
• h , 100−300
FE
Q
• Low V , ≤ 0.4 V
CE(sat)
1
2
• Simplifies Circuit Design
• Reduces Board Space
(4)
(5)
(6)
• Reduces Component Count
• Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
• Device Marking: MBT3946DW1T1 = 46
MBT3946DW1T1*
*Q1 PNP
Q2 NPN
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
6
5
4
MAXIMUM RATINGS
1
2
3
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
V
V
Vdc
CEO
CBO
EBO
SOT−363−6/SC−88
CASE 419B
Style 1
(NPN)
(PNP)
40
−40
Collector−Base Voltage
Vdc
Vdc
mAdc
V
(NPN)
(PNP)
60
−40
MARKING
DIAGRAM
Emitter−Base Voltage
(NPN)
(PNP)
6.0
−5.0
Collector Current − Continuous
I
C
(NPN)
(PNP)
200
−200
d
46
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
46 = Specific Device Code
THERMAL CHARACTERISTICS
Characteristic
d
= Date Code
Symbol
Max
Unit
Total Package Dissipation (Note 1)
P
D
150
mW
T = 25°C
A
ORDERING INFORMATION
Thermal Resistance
Junction−to−Ambient
R
833
°C/W
°C
†
q
JA
Device
Package
Shipping
MBT3946DW1T1 SOT−363 3000/Tape & Reel
MBT3946DW1T1G SOT−363 3000/Tape & Reel
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
MBT3946DW1T2 SOT−363 3000/Tape & Reel
MBT3946DW1T2G SOT−363 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
January, 2004 − Rev. 2
MBT3946DW1T1/D
MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 2)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
(NPN)
(PNP)
40
−40
−
−
C
B
(I = −1.0 mAdc, I = 0)
C
B
Collector−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
Vdc
Vdc
(NPN)
(PNP)
60
−40
−
−
C
E
(I = −10 mAdc, I = 0)
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
(NPN)
(PNP)
6.0
−5.0
−
−
E
C
(I = −10 mAdc, I = 0)
E
C
Base Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
nAdc
nAdc
BL
(NPN)
(PNP)
−
−
50
−50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
CE
EB
Collector Cutoff Current
(V = 30 Vdc, V = 3.0 Vdc)
I
CEX
(NPN)
(PNP)
−
−
50
−50
CE
EB
(V = −30 Vdc, V = −3.0 Vdc)
CE
EB
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 0.1 mAdc, V = 1.0 Vdc)
(NPN)
(PNP)
40
70
100
60
−
−
300
−
C
CE
(I = 1.0 mAdc, V = 1.0 Vdc)
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 50 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
30
−
C
CE
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
(I = −10 mAdc, V = −1.0 Vdc)
100
60
300
−
C
CE
(I = −50 mAdc, V = −1.0 Vdc)
C
CE
(I = −100 mAdc, V = −1.0 Vdc)
30
−
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
Vdc
Vdc
CE(sat)
(NPN)
(PNP)
−
−
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 10 mAdc, I = 1.0 mAdc)
V
BE(sat)
(NPN)
(PNP)
0.65
−
0.85
0.95
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
(I = −10 mAdc, I = −1.0 mAdc)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
(NPN)
(PNP)
300
250
−
−
C
CE
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
obo
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
(NPN)
(PNP)
−
−
4.0
4.5
CB
E
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
pF
ibo
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
(NPN)
(PNP)
−
−
8.0
10.0
EB
C
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
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2
MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Max
Unit
Input Impedance
h
kW
ie
re
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
1.0
2.0
10
12
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
−4
Voltage Feedback Ratio
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
h
h
X 10
(NPN)
(PNP)
0.5
0.1
8.0
10
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Small−Signal Current Gain
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
−
(NPN)
(PNP)
100
100
400
400
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Output Admittance
h
mmhos
dB
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz)
(NPN)
(PNP)
1.0
3.0
40
60
CE
C
(V = −10 Vdc, I = −1.0 mAdc, f = 1.0 kHz)
CE
C
Noise Figure
NF
(V = 5.0 Vdc, I = 100 mAdc, R = 1.0 kW, f = 1.0 kHz)
(NPN)
(PNP)
−
−
5.0
4.0
CE
C
S
(V = −5.0 Vdc, I = −100 mAdc, R = 1.0 kW, f = 1.0 kHz)
CE
C
S
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V = 3.0 Vdc, V = −0.5 Vdc)
(NPN)
(PNP)
t
−
−
35
35
CC
BE
d
(V = −3.0 Vdc, V = 0.5 Vdc)
CC
BE
ns
ns
(I = 10 mAdc, I = 1.0 mAdc)
(NPN)
(PNP)
t
−
−
35
35
C
B1
r
(I = −10 mAdc, I = −1.0 mAdc)
C
B1
(V = 3.0 Vdc, I = 10 mAdc)
(NPN)
(PNP)
t
−
−
200
225
CC
C
s
(V = −3.0 Vdc, I = −10 mAdc)
CC
C
(I = I = 1.0 mAdc)
(NPN)
(PNP)
t
f
−
−
50
75
B1
B2
(I = I = −1.0 mAdc)
B1
B2
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3
MBT3946DW1T1
(NPN)
+3 V
+3 V
DUTY CYCLE = 2%
300 ns
t
1
10 < t < 500 ms
1
+10.9 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
275
275
10 k
10 k
0
−
0.5 V
C < 4 pF*
s
C < 4 pF*
s
1N916
−ꢀ9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
(NPN)
V
CC
I /I = 10
= 40 V
(NPN)
3000
2000
7.0
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
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4
MBT3946DW1T1
(NPN)
500
500
I /I = 10
C B
V
CC
I /I = 10
= 40 V
300
200
300
200
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
10
(NPN)
(NPN)
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Turn−On Time
Figure 6. Rise Time
500
500
1
t′ = t − / t
8 f
s
s
V
I
= 40 V
CC
= I
300
200
300
200
I = I
B1 B2
I /I = 20
C B
I /I = 10
C B
B1 B2
I /I = 20
C B
100
70
100
70
I /I = 20
C B
50
50
I /I = 10
C B
I /I = 10
C B
30
20
30
20
10
10
(NPN)
(NPN)
7
5
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
10
8
14
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
C
= 1.0 mA
I
C
12
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
= 50 mA
I
C
6
4
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
= 50 mA
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500 W
= 100 mA
(NPN)
10
(NPN)
10
I
C
0.1 0.2
0.4
1.0 2.0 4.0
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
S
Figure 9. Noise Figure
Figure 10. Noise Figure
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5
MBT3946DW1T1
(NPN)
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
(NPN)
(NPN)
50
20
10
5
100
70
50
30
2
1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
(NPN)
(NPN)
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
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6
MBT3946DW1T1
(NPN)
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
(NPN)
+25°C
−ꢀ55°C
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
(NPN)
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
(NPN)
T = 25°C
J
(NPN)
V
@ I /I =10
C B
BE(sat)
+25°C TO +125°C
−ꢀ55°C TO +25°C
0.5
0
q
FOR V
CE(sat)
VC
V
BE
@ V =1.0 V
CE
0.6
0.4
−ꢀ0.5
−ꢀ1.0
−ꢀ55°C TO +25°C
+25°C TO +125°C
V
@ I /I =10
C B
CE(sat)
q
FOR V
BE(sat)
VB
0.2
0
−ꢀ1.5
−ꢀ2.0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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MBT3946DW1T1
(PNP)
3 V
3 V
< 1 ns
+9.1 V
275
275
< 1 ns
+0.5 V
10 k
10 k
0
C < 4 pF*
s
C < 4 pF*
s
1N916
10.6 V
300 ns
10 < t < 500 ms
1
t
1
10.9 V
DUTY CYCLE = 2%
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T = 25°C
J
T = 125°C
J
10
5000
V
CC
I /I = 10
= 40 V
(PNP)
(PNP)
3000
2000
7.0
C B
C
5.0
obo
1000
700
C
ibo
500
3.0
2.0
300
200
Q
T
Q
A
100
70
1.0
0.1
50
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
REVERSE BIAS (VOLTS)
I , COLLECTOR CURRENT (mA)
C
Figure 21. Capacitance
Figure 22. Charge Data
500
500
I /I = 10
C B
(PNP)
(PNP)
V
= 40 V
CC
300
200
300
200
I = I
B1 B2
I /I = 20
C B
100
70
100
70
t @ V = 3.0 V
r CC
50
50
15 V
30
20
30
20
I /I = 10
C B
40 V
10
10
2.0 V
7
5
7
5
t @ V = 0 V
OB
d
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
200
200
1.0
2.0 3.0 5.0 7.0 10
20 30 50
70 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Fall Time
Figure 23. Turn−On Time
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MBT3946DW1T1
(PNP)
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
3.0
2.0
1.0
0
12
SOURCE RESISTANCE = 200 W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
10
8
I
C
= 0.5 mA
SOURCE RESISTANCE = 200 W
= 0.5 mA
I
C
SOURCE RESISTANCE = 2.0 k
= 50 mA
6
I
C
4
I
= 50 mA
C
SOURCE RESISTANCE = 2.0 k
= 100 mA
I
= 100 mA
C
2
I
C
(PNP)
10
(PNP)
10
0
0.1 0.2
0.4
1.0 2.0 4.0
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
20
40
100
f, FREQUENCY (kHz)
R , SOURCE RESISTANCE (k OHMS)
g
Figure 25.
Figure 26.
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
300
200
100
(PNP)
(PNP)
70
50
30
20
100
70
10
7
50
30
5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 27. Current Gain
Figure 28. Output Admittance
20
10
10
7.0
5.0
(PNP)
(PNP)
7.0
5.0
3.0
2.0
3.0
2.0
1.0
0.7
0.5
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Input Impedance
Figure 30. Voltage Feedback Ratio
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MBT3946DW1T1
(PNP)
TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T = +125°C
J
V
CE
= 1.0 V
+25°C
−ꢀ55°C
0.7
0.5
0.3
0.2
(PNP)
0.3
0.1
0.1
0.2
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I , COLLECTOR CURRENT (mA)
C
Figure 31. DC Current Gain
1.0
0.8
0.6
0.4
T = 25°C
J
(PNP)
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I , BASE CURRENT (mA)
B
Figure 32. Collector Saturation Region
1.0
0.8
0.6
1.0
T = 25°C
J
V
@ I /I = 10
BE(sat) C B
0.5
0
+25°C TO +125°C
−ꢀ55°C TO +25°C
q
FOR V
CE(sat)
VC
V
BE
@ V = 1.0 V
CE
(PNP)
(PNP)
−ꢀ0.5
−ꢀ1.0
+25°C TO +125°C
−ꢀ55°C TO +25°C
0.4
0.2
0
V
@ I /I = 10
C B
CE(sat)
q
FOR V
BE(sat)
VB
−ꢀ1.5
−ꢀ2.0
1.0
2.0 5.0
10
20
50
100
200
0
20
40
60
80 100 120 140 160 180 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 33. “ON” Voltages
Figure 34. Temperature Coefficients
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MBT3946DW1T1
PACKAGE DIMENSIONS
SOT−363−6/SC−88
CASE 419B−02
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
G
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
6
1
5
4
3
S
−B−
0.026 BSC
0.65 BSC
2
−−−
0.004
0.004
0.004
0.010
0.012
−−−
0.10
0.10
0.10
0.25
0.30
K
N
S
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
M
M
B
0.2 (0.008)
D 6 PL
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
N
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
J
C
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
Figure 35. SC−88/SC70−6
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
MBT3946DW1T1
ON Semiconductor and
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MBT3946DW1T1/D
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