SMBT4124 [INFINEON]
NPN Silicon Switching Transistor; 硅NPN开关晶体管
| 型号： | SMBT4124 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Switching Transistor |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Switching Transistor
SMBT 4124
● High current gain: 0.1 mA to 100 mA
● Low collector-emitter saturation voltage
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
SMBT 4124
sZC
Q68000-A8316
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
25
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
30
5
IC
200
330
150
mA
mW
˚C
P
tot
Total power dissipation, T
S
= 69 ˚C
Junction temperature
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 315
≤ 245
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
SMBT 4124
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CE0
(BR)CB0
(BR)EB0
25
30
5
–
–
–
–
–
–
V
I
C
= 1 mA
Collector-base breakdown voltage
= 10 µA
Emitter-base breakdown voltage
= 10 µA
Collector-base cutoff current
= 0
Emitter-base cutoff current
= 0
DC current gain
–
IC
–
IE
I
CB0
EB0
–
50
50
nA
V
CB = 20 V, I
E
I
–
V
EB = 3 V, I
C
h
FE
–
I
C
= 2 mA, VCE = 1 V
= 50 mA, VCE = 1 V
120
60
–
–
360
–
IC
Collector-emitter saturation voltage1)
= 50 mA, I = 5 mA
V
V
CEsat
BEsat
–
–
0.3
V
IC
B
Base-emitter saturation voltage1)
= 50 mA, I = 5 mA
–
–
0.95
IC
B
AC characteristics
Transition frequency
f
T
300
–
–
–
–
–
–
–
MHz
pF
I
C
= 10 mA, VCE = 20 V, f = 100 MHz
Output capacitance
CB = 5 V, f= 1 MHz
Input capacitance
EB = 0.5 V, f= 1 MHz
Small-signal current gain
= 1 mA, VCE = 5 V, f= 1 kHz
Noise figure
C
obo
ibo
4
V
C
–
8
V
h
fe
120
–
480
5
–
IC
NF
dB
I
R
C
= 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz
= 1 kΩ
S
1)
Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
SMBT 4124
Total power dissipation Ptot = f (T
A
*; TS
)
Saturation voltage I = f (VBE sat, VCE sat)
C
* Package mounted on epoxy
Permissible pulse load Ptot max / Ptot DC = f (t
p)
DC current gain hFE = f (I
C
)
VCE = 10 V, normalized
Semiconductor Group
3
SMBT 4124
Small-signal current gain hfe = f (I
CE = 10 V, f = 1 MHz
C
)
V
Semiconductor Group
4
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