SP000219826 [INFINEON]
Smart High-Side Power Switch for Industrial Applications; 智能高侧电源开关的工业应用
| 型号： | SP000219826 |
| 厂家： | 
Infineon |
| 描述： | Smart High-Side Power Switch for Industrial Applications |
| 文件： | 总13页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET ITS 5215L
Smart High-Side Power Switch
for Industrial Applications
Two Channels: 2 x 90mΩ
Status Feedback
Product Summary
Package
Operating Voltage
Vbb
5.5...40V
two parallel
PG-DSO-12
Active channels one
On-state Resistance
Nominal load current
Current limitation
RON
IL(NOM)
IL(SCr)
Ta
90mΩ
3.7A
12A
45mΩ
7.4A
12A
-30 … +85°C
Operating Temperature
General Description
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
•
Applications
•
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads in industrial
applications
•
•
•
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
•
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Protection Functions
Block Diagram
•
•
•
•
•
Short circuit protection
Vbb
Overload protection
Current limitation
Thermal shutdown
IN1
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)
Logic
ST1
IN2
ST2
Channel 1
Channel 2
Load 1
Load 2
•
•
•
Diagnostic Function
GND
•
•
•
Diagnostic feedback with open drain output
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
Infineon Technologies AG
1
2006-Mar-27
®
PROFET ITS 5215L
Functional diagram
GND
current limit
gate
control
+
VBB
charge
pump
internal
clamp for
logic
inductive load
OUT1
IN1
temperature
sensor
reverse
battery
ESD
ST1
protection
Open load
detection
channel 1
IN2
control and protection circuit
equivalent to
ST2
channel 1
OUT2
Pin Definitions and Functions
Pin configuration
Pin
1
Symbol Function
(top view)
GND
IN1
Ground of chip
2
Input 1,2 activates channel 1,2 in case of logic
high signal
GND 1•
12 V
bb
4
IN2
IN1
ST1
IN2
2
3
4
5
6
11 NC
10 OUT1
9 NC
8 OUT2
7 NC
3
ST1
ST2
Diagnostic feedback 1 & 2 of channel 1,2
open drain, low on failure
Vbb
*
5
6,12,
heat
slug
V
Positive power supply voltage. Design the
wiring for the simultaneous max. short circuit
currents from channel 1 to 2 and also for low
thermal resistance
bb
ST2
V
bb
* heat slug
7,9,11 NC
8
10
Not Connected
OUT2
OUT1
Output 1,2 protected high-side power output
of channel 1 and 2. Design the wiring for the
max. short circuit current
Infineon Technologies AG
2
2006-Mar-27
®
PROFET ITS 5215L
Maximum Ratings at Tj = 25°C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 5)
Supply voltage for full short circuit protection
Vbb
Vbb
43
36
V
V
Tj,start =-40 ...+150°C
Load current (Short-circuit current, see page 6)
IL
self-limited
60
A
V
3)
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoaddump
RI2) = 2 Ω, td = 400 ms; IN= low or high,
each channel loaded with RL = 13.5 Ω,
Junction temperature
Tj
Ta
Tstg
+150
-30 ...+85
-40 … +105
°C
W
Operating temperature range
Storage temperature range
Power dissipation (DC)4)
Ta = 25°C: Ptot
Ta = 85°C:
3.1
1.6
(all channels active)
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C4), see diagrams on page 9
21.3
10
1.0
4.0
8.0
mH
kV
I = 3.5 A, EAS = 178 mJ, 0Ω
IL = 7.0 A, EAS = 337 mJ, 0Ω
one channel: ZL
two parallel channels:
ElLectrostatic discharge capability (ESD)
(Human Body Model)
IN:
VESD
ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC) see internal circuit diagram page 8
Current through input pin (DC)
VIN
IIN
IINp
IST
-10 ... +16
±0.3
V
mA
Pulsed current through input pin5)
Current through status pin (DC)
±5.0
±5.0
1)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
2)
3)
4)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 13
bb
5)
only for testing
Infineon Technologies AG
3
2006-Mar-27
®
PROFET ITS 5215L
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
junction - Case6)
each channel: RthjC
Rthja
one channel active:
all channels active:
K/W
--
--
--
--
--
--
45
40
5
--
--
--
junction – ambient6)
@ 6 cm2 cooling area
Electrical Characteristics
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (V to OUT); I = 2 A
L
bb
each channel,
--
--
mΩ
Tj = 25°C: RON
Tj = 150°C:
two parallel channels, Tj = 25°C:
70
90
140
180
--
35
45
--
see diagram, page 10
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
3.7
7.4
4.7
9.5
A
6)
Device on PCB , T = 85°C, T ≤ 150°C
a
j
Output current while GND disconnected or pulled up7);
IL(GNDhigh)
--
--
2
mA
V
bb
= 32 V, V = 0,
IN
see diagram page 8
Turn-on time8)
Turn-off time
RL = 12 Ω
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
--
--
100
100
250
270
µs
Slew rate on8)
Slew rate off8)
10 to 30% VOUT, RL = 12 Ω: dV/dton
70 to 40% VOUT, RL = 12 Ω: -dV/dtoff
0.2
0.2
--
--
1.0 V/µs
1.1 V/µs
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
connection. PCB is vertical without blown air. See page 13
not subject to production test, specified by design
6)
bb
7)
8)
See timing diagram on page 11.
Infineon Technologies AG
4
2006-Mar-27
®
PROFET ITS 5215L
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Operating Parameters
Operating voltage
Vbb(on)
5.5
--
--
--
40
V
V
Undervoltage switch off9)
Tj =-40°C...25°C: Vbb(u so)
Tj =125°C:
4.5
--
-- 4.510)
Overvoltage protection11)
Vbb(AZ)
41
47
52
V
I
bb = 40 mA
Standby current12)
Tj =-40°C...25°C: Ibb(off)
Tj =150°C:
--
--
--
--
4.5
--
-- 10
10
µA
15
VIN = 0; see diagram page 11
10)
Tj =125°C:
Off-State output current (included in Ibb(off)
)
IL(off)
1
5
µA
VIN = 0; each channel
Operating current 13), VIN = 5V,
IGND
--
--
0.6
1.2
1.2
2.4
mA
one channel on:
all channels on:
Protection Functions14)
Current limit, V
= 0V, (see timing diagrams, page 11)
out
Tj =-40°C: IL(lim)
--
--
9
--
15
--
23
A
A
Tj =25°C:
Tj =+150°C:
----
Repetitive short circuit current limit,
Tj = Tjt
each channel IL(SCr)
--
--
12
12
--
--
two channels
(see timing diagrams, page 11)
Initial short circuit shutdown time
T
j,start =25°C: toff(SC)
--
2
--
ms
V
V
= 0V
(see timing diagrams on page 11)
out
Output clamp (inductive load switch off)15)
VON(CL)
41
47
52
at V
ON(CL)
= V - V , I = 40 mA
bb OUT L
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
150
--
--
10
--
--
°C
K
9)
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage
falling below the lower limit of Vbb(on)
10)
11)
not subject to production test, specified by design
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also V
in table of protection functions and
ON(CL)
circuit diagram on page 8.
12)
13)
14)
Measured with load; for the whole device; all channels off
Add I , if I > 0
ST
ST
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
15)
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest
V
ON(CL)
Infineon Technologies AG
5
2006-Mar-27
®
PROFET ITS 5215L
Parameter and Conditions, each of the four channels Symbol
Values
Unit
at Tj = -40...+150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Reverse Battery
Reverse battery voltage 16)
-Vbb
-VON
--
--
--
600
32
-- mV
V
Drain-source diode voltage (V > V
)
out
bb
IL =-2.0A, Tj =+150°C
Diagnostic Characteristics
Open load detection voltage
V OUT(OL)
1.7
2.5
2.8
4.0
4.0
V
1
Input and Status Feedback17)
Input resistance
RI
6.0
kΩ
(see circuit page 8)
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
VIN(T+)
VIN(T-)
∆ VIN(T)
td(STon)
--
1.0
--
--
--
0.2
10
2.5
--
--
V
V
V
Status change after positive input slope18)
with open load
--
20
µs
Status change after positive input slope18)
with overload
td(STon)
td(SToff)
td(SToff)
30
--
--
--
--
--
500
20
µs
µs
µs
Status change after negative input slope
with open load
Status change after negative input slope18)
with overtemperature
--
Off state input current
On state input current
Status output (open drain)
Zener limit voltage
VIN = 0.4 V: IIN(off)
VIN = 5 V: IIN(on)
5
10
--
35
20
60
µA
µA
IST = +1.6 mA: VST(high)
IST = +1.6 mA: VST(low)
5.4
--
--
--
--
0.6
V
ST low voltage
16)
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and
circuit page 8).
17)
18)
If ground resistors R
are used, add the voltage drop across these resistors.
GND
not subject to production test, specified by design
Infineon Technologies AG
6
2006-Mar-27
®
PROFET ITS 5215L
Truth Table
( each channel )
IN
OUT
ST
H
Normal operation
Open load
L
H
L
L
H
Z
H
19)
L
H
H
H
H
L
Overtemperature
L
L
H
L
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal valid after the time delay shown in the timing diagrams
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel (see truth
table). If switching channel 1 to 2 in parallel, the status outputs ST1 and ST2 have to be configured as a 'Wired
OR' function with a single pull-up resistor.
Terms
I
bb
V
12,6
Leadframe
ON1
V
V
V
ON2
bb
I
I
IN1
IN2
V
bb
2
I
I
IN1
L1
10
8
OUT1
OUT2
4
3
PROFET
IN2
ST1
ST2
I
L2
ST1
ST2
V
I
IN1 IN2
5
GND
1
V
OUT1
V
V
ST1
ST2
V
I
OUT2
GND
R
GND
Leadframe (V ) is connected to pin 6,12
bb
GND
External R
optional; single resistor R
=150 Ω for reverse battery protection up to the max.
GND
operating voltage.
19)
L, if potential at the Output exceeds the OpenLoad detection voltage
Infineon Technologies AG
7
2006-Mar-27
®
PROFET ITS 5215L
Input circuit (ESD protection), IN1 or IN2
Overvolt. and reverse batt. protection
+ 5V
+ V
bb
R
I
IN
R
ST
V
Z2
R
I
IN
ESD-ZDI
I
I
Logic
ST
OUT
GND
R
ST
V
Z1
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
GND
R
Load
R
GND
Signal GND
Load GND
Status output, ST1 or ST2
V
= 6.1 V typ., V = 47 V typ., R
= 150 Ω,
GND
Z1
ST
Z2
+5V
R
= 15 kΩ, R = 3.5 kΩ typ.
I
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active
R
ST(ON)
ST
Open-load detection, OUT1 or OUT2
ESD-
ZD
OFF-state diagnostic condition:
GND
Open Load, if V
> 3 V typ.; IN low
OUT
ESD-Zener diode: 6.1 V typ., max 0.3 mA; R
< 375 Ω
ST(ON)
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
V
bb
R
EXT
Inductive and overvoltage output clamp,
OUT1 or OUT2
OFF
V
+V
bb
OUT
V
Z
Open load
detection
Logic
unit
V
ON
OUT
Signal GND
GND disconnect
Power GND
V
ON
clamped to V = 47 V typ.
ON(CL)
V
bb
IN
OUT
PROFET
ST
GND
V
V
V
V
bb
IN
ST
GND
Any kind of load. In case of IN=high is V
≈ V -V .
IN IN(T+)
OUT
Due to V
GND
> 0, no V = low signal available.
ST
Infineon Technologies AG
8
2006-Mar-27
®
PROFET ITS 5215L
GND disconnect with GND pull up
Inductive load switch-off energy
dissipation
E
bb
V
bb
IN
E
AS
OUT
E
E
PROFET
Load
L
V
bb
IN
ST
GND
OUT
PROFET
L
=
ST
V
V
V
V
IN ST
GND
GND
bb
Z
L
{
E
R
Any kind of load. If V
> V - V device stays off
IN IN(T+)
GND
R
L
Due to V
GND
> 0, no V = low signal available.
ST
Energy stored in load inductance:
V
disconnect with energized inductive
2
L
bb
1
E = / ·L·I
L
2
load
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
= Ebb + EL - ER= VON(CL)·i (t) dt,
L
V
AS
∫
high
bb
IN
with an approximate solution for R > 0Ω:
L
OUT
PROFET
I ·L
L
I ·R
L
L
E
AS
=
(V +|V
|) ln (1+
OUT(CL)
)
bb
ST
2·R
|V
OUT(CL)
|
L
GND
Maximum allowable load inductance for
4)
a single switch off (one channel)
V
bb
L = f (I ); T
= 150°C, V = 12 V, R = 0 Ω
bb L
L
j,start
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 9) each switch is
Z [mH]
L
1000
100
10
protected against loss of V
.
bb
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
1
1
2
3
4
5
6
I
[A]
L
Infineon Technologies AG
9
2006-Mar-27
®
PROFET ITS 5215L
Typ. on-state resistance
R
ON
= f (V ,T ); I = 2 A, IN = high
L
bb j
[mOhm]
R
ON
Tj = 150°C
160
120
80
40
0
25°C
-40°C
5
7
9
11
30
40
V
bb
[V]
Typ. standby current
I
= f (T ); V = 9...34 V, IN1,2 = low
bb
bb(off)
j
I
[µA]
bb(off)
45
40
35
30
25
20
15
10
5
0
-50
0
50
100
150
200
T [°C]
j
Infineon Technologies AG
10
2006-Mar-27
®
PROFET ITS 5215L
Timing diagrams
Both channels are symmetric and consequently the diagrams are valid for channel 1 and
channel 2
Figure 2b: Switching a lamp:
Figure 1a: V turn on:
bb
IN1
IN
IN2
V
ST
V
bb
V
OUT1
OUT
V
OUT2
ST1 open drain
ST2 open drain
I
L
t
t
Figure 3a: Turn on into short circuit:
Figure 2a: Switching a resistive load,
shut down by overtemperature, restart by cooling
turn-on/off time and slew rate definition:
IN1
other channel: normal operation
IN
VOUT
I
L1
90%
I
L(lim)
t
dV/dtoff
on
I
L(SCr)
t
dV/dton
off
10%
t
off(SC)
ST
IL
t
Heating up of the chip may require several milliseconds, depending
on external conditions
t
Infineon Technologies AG
11
2006-Mar-27
®
PROFET ITS 5215L
Figure 3b: Turn on into short circuit:
Figure 5a: Open load: detection in OFF-state, turn
shut down by overtemperature, restart by cooling
(two parallel switched channels 1 and 2)
on/off to open load
Open load of channel 1; other channels normal
operation
IN1/2
IN1
I
+ I
L1 L2
V
OUT1
2xI
L(lim)
I
L1
I
L(SCr)
ST
t
off(SC)
ST1/2
10µs
500µs
t
ST1 and ST2 have to be configured as a 'Wired OR' function
ST1/2 with a single pull-up resistor.
Figure 6a: Status change after, turn on/off to
overtemperature
Overtemperature of channel 1; other channels normal
operation
Figure 4a: Overtemperature:
Reset if T <T
j
jt
IN1
IN
ST
ST
30µs
20µs
V
OUT
T
J
t
Infineon Technologies AG
12
2006-Mar-27
®
PROFET ITS 5215L
Package and Ordering Code
Published by
Standard: PG-DSO-12-2
Infineon Technologies AG,
St.-Martin-Strasse 53,
Sales Code
ITS 5215L
D-81669 München
Ordering Code
SP000219826
© Infineon Technologies AG 2006
All Rights Reserved.
1)
1)
±0.1
6.4
±0.1
7.5
A
B
8˚
8˚
Attention please!
+0.075
-0.035
0.25
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
C
0.1
5 ×
1
0.1 C 12x
Seating Plane
±0.15
0.7
1
= 5
(0.2)
Terms of delivery and rights to technical change reserved.
0.4 +0.13
(4.4)
M
0.25
7
C A B
±0.3
10.3
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
±0.1
0.25 B
5.1
12
Infineon Technologies is an approved CECC manufacturer.
ø0.8 × 0.1-0.05 Depth4)
1
6
Information
±0.1
7.8
(Heatslug)
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Stand OFF
3) Stand OUT
4) Pin 1 Index Marking; Polish finish
All package corners max. R 0.25
Technologies Representatives worldwide (see address list).
All dimensions in millimetres
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Printed circuit board (FR4, 1.5mm thick, one layer
70µm, 6cm2 active heatsink area) as a reference for
Infineon Technologies Components may only be used in life-
support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-
support device or system, or to affect the safety or
max. power dissipation P , nominal load current
tot
I
and thermal resistance R
L(NOM)
thja
effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
PG-DSO-12
Infineon Technologies AG
13
2006-Mar-27
相关型号：
SP000219835
Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 90mз
INFINEON
©2020 ICPDF网 联系我们和版权申明