SP000923330 [INFINEON]

Hall Effect Sensor, 15.9mT Min, 36mT Max, 0-25mA, Rectangular, Surface Mount, SOT-23, SMD-3;
SP000923330
型号: SP000923330
厂家: Infineon    Infineon
描述:

Hall Effect Sensor, 15.9mT Min, 36mT Max, 0-25mA, Rectangular, Surface Mount, SOT-23, SMD-3

输出元件 传感器 换能器
文件: 总26页 (文件大小:1413K)
中文:  中文翻译
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TLE4964-2M  
High Precision Automotive Hall Effect Switch  
Data Sheet  
Revision 1.0, 2012-07-20  
Sense & Control  
Edition 2012-07-20  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© 2012 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any  
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties  
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights  
of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in  
question, please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
TLE4964-2M  
Revision History  
Page or Item  
Subjects (major changes since previous revision)  
Revision 1.0, 2012-07-20  
Trademarks of Infineon Technologies AG  
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,  
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,  
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,  
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,  
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,  
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.  
Other Trademarks  
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,  
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR  
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,  
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.  
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of  
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data  
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of  
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics  
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™  
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,  
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.  
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.  
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden  
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.  
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™  
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of  
Diodes Zetex Limited.  
Last Trademarks Update 2011-02-24  
Data Sheet  
3
Revision 1.0, 2012-07-20  
TLE4964-2M  
Table of Contents  
Table of Contents  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
1
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Target Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
1.1  
1.2  
1.3  
2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Pin Configuration (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Functional Block Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Default Start-up Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2.1  
2.2  
2.3  
2.4  
2.5  
2.6  
3
Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Electrical and Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Electro Magnetic Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
3.1  
3.2  
3.3  
3.4  
3.5  
4
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Package Outline PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Packing Information PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Footprint PG-SC59-3-5 and PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
PG-SOT23-3-15 Distance between Chip and Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Package Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
4.1  
4.2  
4.3  
4.4  
4.5  
5
6
Graphs of the Magnetic Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Graphs of the Electrical Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Data Sheet  
4
Revision 1.0, 2012-07-20  
TLE4964-2M  
List of Figures  
List of Figures  
Figure 1-1 Image of TLE4964-2M in the PG-SOT23-3-15 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Figure 2-1 Pin Configuration and Center of Sensitive Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Figure 2-2 Functional Block Diagram TLE4964-2M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Figure 2-3 Timing Diagram TLE4964-2M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Figure 2-4 Output Signal TLE4964-2M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Figure 2-5 Illustration of the Start-up Behavior of the TLE4964-2M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Figure 3-1 Application Circuit 1: With External Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Figure 3-2 Application Circuit 2: Without External Resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Figure 3-3 Definition of Magnetic Field Direction PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 3-4 EMC Test Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Figure 4-1 PG-SOT23-3-15 Package Outline (All Dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Figure 4-2 Packing of the PG-SOT23-3-15 in a Tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Figure 4-3 Footprint PG-SC59-3-5 and PG-SOT23-3-15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Figure 4-4 Distance between Chip and Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Figure 4-5 Marking of TLE4964-2M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Figure 5-1 Operating Point (BOP) of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 5-2 Release Point (BRP) of the TLE4964-2M over Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 5-3 Hysteresis (BHys) of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 6-1 Power On Time tPON of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Figure 6-2 Signal Delay Time of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Figure 6-3 Supply Current of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Figure 6-4 Supply Current of the TLE4964-2M over Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Figure 6-5 Output Current Limit of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Figure 6-6 Output Current Limit of the TLE4964-2M over applied Pull-up Voltage . . . . . . . . . . . . . . . . . . . . . 22  
Figure 6-7 Output Fall Time of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Figure 6-8 Output Fall Time of the TLE4964-2M over applied Pull-up Voltage . . . . . . . . . . . . . . . . . . . . . . . . 23  
Figure 6-9 Output Rise Time of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Figure 6-10 Output Rise Time of the TLE4964-2M over applied Pull-up Voltage . . . . . . . . . . . . . . . . . . . . . . . 23  
Figure 6-11 Output Leakage Current of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Figure 6-12 Saturation Voltage of the TLE4964-2M over Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Figure 6-13 Saturation Voltage of the TLE4964-2M over Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Figure 6-14 Effective Noise of the TLE4964-2M Thresholds over Temperature . . . . . . . . . . . . . . . . . . . . . . . . 25  
Figure 6-15 Output Signal Jitter of the TLE4964-2M over Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Data Sheet  
5
Revision 1.0, 2012-07-20  
TLE4964-2M  
List of Tables  
List of Tables  
Table 1-1 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Table 2-1 Pin Description PG-SOT23-3-15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Table 3-1 Absolute Maximum Rating Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Table 3-2 ESD Protection (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Table 3-3 Operating Conditions Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Table 3-4 General Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Table 3-5 Magnetic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Table 3-6 Magnetic Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Table 3-7 Electro Magnetic Compatibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Data Sheet  
6
Revision 1.0, 2012-07-20  
TLE4964-2M  
Product Description  
1
Product Description  
1.1  
Overview  
Characteristic  
Supply Voltage  
3.0~32 V  
Supply Current  
1.6 mA  
Sensitivity  
Low  
Interface  
Temperature  
Unipolar Hall  
Effect Switch  
Open Drain  
Output  
-40°C to 170°C  
B
OP:28 mT  
BRP:22.5 mT  
Figure 1-1  
Image of TLE4964-2M in the PG-SOT23-3-15 Package  
1.2  
Features  
3.0 V to 32 V operating supply voltage  
Operation from unregulated power supply  
Reverse polarity protection (-18 V)  
Overvoltage capability up to 42 V without external resistor  
Output overcurrent & overtemperature protection  
Active error compensation  
High stability of magnetic thresholds  
Low jitter (typ. 0.35 μs)  
High ESD performance  
Small SMD package PG-SOT23-3-15 (TLE4964-2M)  
1.3  
Target Applications  
Target applications for the TLE496x Hall switch family are all applications which require a high precision Hall  
switch with an operating temperature range from -40°C to 170°C. Its superior supply voltage range from 3.0 V to  
32 V with overvoltage capability (e.g. load-dump) up to 42 V without external resistor makes it ideally suited for  
automotive and industrial applications.  
The TLE4964-2M is a unipolar switch with a typical operating point BOP = 28 mT and a hysteresis of BHYS = 5.5 mT.  
It is ideally suited for various position detection applications.  
Table 1-1  
Ordering Information  
Product Type  
Product Name  
TLE4964-2M  
Ordering Code  
Package  
Unipolar Hall Switch  
SP000923330  
PG-SOT23-3-15  
Data Sheet  
7
Revision 1.0, 2012-07-20  
TLE4964-2M  
Functional Description  
2
Functional Description  
2.1  
General  
The TLE4964-2M is an integrated Hall effect switch designed specifically for highly accurate applications with  
superior supply voltage capability, operating temperature range and temperature stability of the magnetic  
thresholds.  
2.2  
Pin Configuration (top view)  
Center of  
Sensitive Area  
3
0.65± 0.1  
1
2
1.45± 0.1  
SOT23  
Figure 2-1  
Pin Configuration and Center of Sensitive Area  
2.3  
Pin Description  
Table 2-1  
Pin Description PG-SOT23-3-15  
Pin No.  
Symbol  
VDD  
Q
Function  
Supply voltage  
Output  
1
2
3
GND  
Ground  
Data Sheet  
8
Revision 1.0, 2012-07-20  
TLE4964-2M  
Functional Description  
2.4  
Block Diagram  
VDD  
To All Subcircuits  
Voltage  
Regulator  
Oscillator and  
Sequencer  
Bias and  
Compensation  
Circuits  
Reference  
Q
Amplifier  
Control  
Spinning Hall  
Probe  
Comparator  
with  
Hysteresis  
Low Pass  
Filter  
Overtemperature  
& overcurrent  
protection  
GND  
Figure 2-2  
Functional Block Diagram TLE4964-2M  
2.5  
Functional Block Description  
The chopped Hall IC switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output  
transistor.  
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the  
temperature behavior and reduce influence of technology variations.  
The active error compensation (chopping technique) rejects offsets in the signal path and the influence of  
mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stress in the  
package. The chopped measurement principle together with the threshold generator and the comparator ensures  
highly accurate and temperature stable magnetic thresholds.  
The output transistor has an integrated overcurrent and overtemperature protection.  
Data Sheet  
9
Revision 1.0, 2012-07-20  
TLE4964-2M  
Functional Description  
Applied  
Magnetic  
Field  
BOP  
BRP  
td  
tf  
td  
tr  
VQ  
90%  
10%  
Figure 2-3  
Figure 2-4  
Data Sheet  
Timing Diagram TLE4964-2M  
VQ  
B
0 BRP  
BOP  
Output Signal TLE4964-2M  
10  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Functional Description  
2.6  
Default Start-up Behavior  
The magnetic thresholds exhibit a hysteresis BHYS = BOP - BRP. In case of a power-on with a magnetic field B within  
hysteresis (BOP > B > BRP) the output of the sensor is set to the pull up voltage level (VQ) per default. After the first  
crossing of BOP or BRP of the magnetic field the internal decision logic is set to the corresponding magnetic input  
value.  
V
DDA is the internal supply voltage which is following the external supply voltage VDD.  
This means for B > BOP the output is switching, for B < BRP and BOP > B > BRP the output stays at VQ.  
VDDA  
tPon  
3V  
The device always applies  
Power on ramp  
VQ level at start-up  
t
VQ  
independent from the  
applied magnetic field !  
Magnetic field above threshold  
B > BOP  
t
VQ  
Magnetic field below threshold  
B < BRP  
t
t
VQ  
Magnetic field in hysteresis  
BOP > B > BRP  
Figure 2-5  
Illustration of the Start-up Behavior of the TLE4964-2M  
Data Sheet  
11  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Specification  
3
Specification  
3.1  
Application Circuit  
The following Figure 3-1 shows one option of an application circuit. As explained above the resistor RS can be left  
out (see Figure 3-2). The resistor RQ has to be in a dimension to match the applied VS to keep IQ limited to the  
operating range of maximum 25 mA.  
e.g.:  
VS = 12 V  
IQ = 12 V/1200 = 10 mA  
Vs  
RS = 100Ω  
VDD  
RQ = 1.2kΩ  
Q
CDD = 47nF  
TVS diode  
e.g. ESD24VS2U  
GND  
Figure 3-1  
Application Circuit 1: With External Resistor  
Vs  
VDD  
RQ = 1.2kΩ  
Q
CDD = 47nF  
TVS diode  
e.g. ESD24VS2U  
GND  
Figure 3-2  
Application Circuit 2: Without External Resistor  
Data Sheet  
12  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Specification  
3.2  
Absolute Maximum Ratings  
Table 3-1  
Absolute Maximum Rating Parameters  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note / Test Condition  
Min.  
Max.  
Supply voltage1)  
VDD  
VQ  
-18  
32  
42  
V
10h, no external resistor required  
Output voltage  
-0.5  
-70  
-40  
32  
V
Reverse output current IQ  
Junction temperature1) TJ  
mA  
°C  
155  
165  
175  
195  
for 2000h (not additive)  
for 1000h (not additive)  
for 168h (not additive)  
for 3 x 1h (additive)  
Storage temperature  
TS  
-40  
150  
300  
°C  
Thermal resistance  
Junction ambient  
RthJA  
K/W  
for PG-SOT23-3-15 (2s2p)  
for PG-SOT23-3-15  
Thermal resistance  
Junction lead  
RthJL  
100  
K/W  
1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime  
of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime  
statement shall in no event extend the agreed warranty period.  
Attention: Stresses above the max. values listed here may cause permanent damage to the device.  
Exposure to absolute maximum rating conditions for extended periods may affect device  
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may  
cause irreversible damage to the integrated circuit.  
Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):  
e.g for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mA  
Power dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW  
Temperature T = RthJA x PDIS = 300 K/W x 40 mW = 12 K  
For TA = 150 °C: TJ = TA + T = 150 °C + 12 K = 162 °C  
Table 3-2  
ESD Protection1) (TA = 25°C)  
Parameter  
Symbol  
Min.  
Values  
Typ.  
Unit  
Note / Test Condition  
Max.  
7
ESD voltage (HBM)2)  
VESD  
-7  
kV  
R = 1.5 k, C = 100 pF  
ESD voltage (SDM)3)  
-1  
1
ESD voltage (system level)4)  
-15  
15  
with circuit shown in  
Figure 3-1 & Figure 3-2  
1) Characterization of ESD is carried out on a sample basis, not subject to production test.  
2) Human Body Model (HBM) tests according to EIA/JESD22-A114.  
3) Socket device model (SDM) tests according to EOS/ESD-DS5.3-1993.  
4) Gun test (2k/ 330pF or 330/ 150pF) according to ISO 10605-2008.  
Data Sheet  
13  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Specification  
3.3  
Operating Range  
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4964-2M.  
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.  
Table 3-3  
Operating Conditions Parameters  
Parameter  
Symbol  
Min.  
Values  
Typ.  
Unit  
Note / Test Condition  
Max.  
321)  
32  
Supply voltage  
Output voltage  
VDD  
VQ  
Tj  
3.0  
-0.3  
-40  
0
V
V
Junction temperature  
Output current  
Magnetic signal input frequency2) fSW  
170  
25  
°C  
mA  
kHz  
IQ  
0
10  
1) Latch-up test with factor 1.5 is not covered. Please see max ratings also.  
2) For operation at the maximum switching frequency the magnetic input signal must be 1.4 times higher than for static fields.  
This is due to the -3dB corner frequency of the internal low-pass filter in the signal path.  
3.4  
Electrical and Magnetic Characteristics  
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient  
temperature range. Typical characteristics are the median of the production and correspond to VDD = 12 V and  
TA = 25°C. The below listed specification is valid in combination with the application circuit shown in Figure 3-1  
and Figure 3-2  
Table 3-4  
General Electrical Characteristics  
Parameter  
Symbol  
Values  
Unit  
Note / Test Condition  
Min.  
Typ.  
1.6  
Max.  
2.5  
1
Supply current  
IS  
1.1  
mA  
mA  
V
Reverse current  
ISR  
0.05  
0.2  
for VDD = -18 V  
IQ = 20 mA  
Output saturation  
voltage  
VQSAT  
0.5  
0.6  
10  
0.24  
V
IQ = 25 mA  
Output leakage  
current  
IQLEAK  
IQLIMIT  
μA  
Output current  
limitation  
30  
56  
70  
mA  
internally limited & thermal  
shutdown  
Output fall time1)  
Output rise time1)  
Output jitter1)2)  
Delay time1)3)  
tf  
0.17  
0.4  
0.4  
0.5  
0.35  
15  
1
μs  
μs  
μs  
μs  
μs  
1.2 k/ 50 pF, see Figure 2-3  
1.2 k/ 50 pF, see Figure 2-3  
For square wave signal with 1 kHz  
see Figure 2-3  
tr  
1
tQJ  
td  
1
12  
30  
150  
Power-on time1)4)  
tPON  
80  
VDD = 3 V, B BRP - 0.5 mT or  
B BOP + 0.5 mT  
Chopper frequency1) fOSC  
350  
kHz  
1) Not subject to production test, verified by design/characterization.  
2) Output jitter is the 1σ value of the output switching distribution.  
3) Systematic delay between magnetic threshold reached and output switching.  
4) Time from applying VDD = 3.0 V to the sensor until the output is valid.  
Data Sheet  
14  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Specification  
Table 3-5  
Magnetic Characteristics  
Symbol T (°C)  
Parameter  
Values  
Typ.  
30.2  
28.0  
23.1  
24.2  
22.5  
18.6  
5.9  
Unit  
Note / Test  
Condition  
Min.  
21.6  
20.0  
16.3  
17.1  
15.9  
12.9  
4.4  
Max.  
38.8  
36.0  
29.9  
31.2  
29.1  
24.3  
8.0  
Operating point  
Release point  
Hysteresis  
BOP  
-40  
25  
mT  
170  
-40  
25  
BRP  
mT  
mT  
170  
-40  
25  
BHYS  
4.1  
5.5  
7.5  
170  
25  
3.4  
4.6  
6.3  
Effective noise value of the  
magnetic switching points1)  
BNeff  
62  
μT  
Temperature compensation of TC  
magnetic thresholds2)  
-1200  
ppm/K  
1) The magnetic noise is normal distributed and can be assumed as nearly independent to frequency without sampling noise  
or digital noise effects. The typical value represents a the rms-value and corresponds therefore to a 1 σ probability of  
normal distribution. Consequently a 3 σ value corresponds to 99.7% probability of appearance.  
2) Not subject to production test, verified by design/characterization.  
Field Direction Definition  
Positive magnetic fields are defined with the south pole of the magnet to the branded side of package.  
N
S
Branded Side  
Figure 3-3  
Definition of Magnetic Field Direction PG-SOT23-3-15  
Data Sheet  
15  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Specification  
3.5  
Electro Magnetic Compatibility  
Characterization of Electro Magnetic Compatibility is carried out on a sample basis from one qualification lot. Not  
all specification parameters have been monitored during EMC exposure.  
+5V  
Vs  
Rs  
RQ = 1.2kΩ  
VDD  
Q
CDD = 10nF  
CQ = 10nF  
GND  
Figure 3-4  
EMC Test Circuit  
Ref: ISO 7637-2 (Version 2004), test circuit Figure 3.4 (with external resistor, RS = 100 )  
Table 3-6  
Magnetic Compatibility  
Parameter  
Symbol  
Level / Type  
Status  
Testpulse 1  
VEMC  
-100 V  
C
Testpulse 2a1)  
Testpulse 2b  
Testpulse 3a  
Testpulse 3b  
Testpulse 42)  
Testpulse 5b3)  
60 V/110 V  
10 V  
-150 V  
100 V  
-7 V / -5.5 V  
US = 86.5 V / US* = 28.5 V  
A/C  
C
A
A
A
A
1) ISO 7637-2 (2004) describes internal resistance = 2 (former 10 ).  
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V +/- 0.2 V.  
3) A central load dump protection of 42 V is used. Us* = 42 V-13.5 V.  
Ref: ISO 7637-2 (Version 2004), test circuit Figure 3.4 (without external resistor, RS = 0)  
Table 3-7  
Electro Magnetic Compatibility  
Parameter  
Symbol  
Level / Type  
Status  
Testpulse 1  
VEMC  
-50 V  
50 V  
10 V  
-150 V  
100 V  
-7 V / 5.5 V  
US = 86.5 V / US* = 28.5 V  
C
A
C
A
A
A
A
Testpulse 2a1)  
Testpulse 2b  
Testpulse 3a  
Testpulse 3b  
Testpulse 42)  
Testpulse 5b3)  
1) ISO 7637-2 (2004) describes internal resistance = 2 (former 10 ).  
2) According to 7637-2 for test pulse 4 the test voltage shall be 12 V +/- 0.2 V.  
3) A central load dump protection of 42 V is used. Us* = 42 V-13.5 V.  
Data Sheet  
16  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Package Information  
4
Package Information  
The TLE4964-2M is available in the small halogen free SMD package PG-SOT23-3-15.  
4.1  
Package Outline PG-SOT23-3-15  
±0.1  
1
0.1 MAX.  
±0.1  
2.9  
B
3
1
2
1)  
+0.1  
-0.05  
0.4  
A
0
.
0
8
.
.
.
0
C
.
1
5
0.95  
0.  
.
.
8
°
1.9  
0.25 B C  
M
M
0.2  
A
1) Lead width can be 0.6 max. in dambar area  
Figure 4-1  
PG-SOT23-3-15 Package Outline (All Dimensions in mm)  
4.2  
Packing Information PG-SOT23-3-15  
4
0.2  
0.9  
3.15  
1.15  
Pin 1  
SOT23-TP V02  
Figure 4-2  
Packing of the PG-SOT23-3-15 in a Tape  
Data Sheet  
17  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Package Information  
4.3  
Footprint PG-SC59-3-5 and PG-SOT23-3-15  
0.8  
0.8  
1.2  
0.8  
1.2  
0.8  
Reflow Soldering  
Wave Soldering  
Figure 4-3  
Footprint PG-SC59-3-5 and PG-SOT23-3-15  
4.4  
PG-SOT23-3-15 Distance between Chip and Package  
Figure 4-4  
Distance between Chip and Package  
4.5  
Package Marking  
Year (y) = 0...9  
Month (m) = 1...9,  
o - October  
n - November  
d - December  
M42  
Figure 4-5  
Marking of TLE4964-2M  
Data Sheet  
18  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Magnetic Parameters  
5
Graphs of the Magnetic Parameters  
45  
40  
35  
30  
25  
20  
15  
10  
5
Typ  
Min  
Max  
0
ꢀ50,00  
0,00  
50,00  
TA[°C]  
100,00  
150,00  
Figure 5-1  
Operating Point (BOP) of the TLE4964-2M over Temperature  
35  
30  
25  
20  
15  
10  
5
Typ  
Min  
Max  
0
ꢀ50,00  
0,00  
50,00  
TA[°C]  
100,00  
150,00  
Figure 5-2  
Release Point (BRP) of the TLE4964-2M over Temperature  
9
8
7
6
5
4
3
2
1
0
Typ  
Min  
Max  
ꢀ50,00  
0,00  
50,00  
TA[°C]  
100,00  
150,00  
Figure 5-3  
Hysteresis (BHys) of the TLE4964-2M over Temperature  
Data Sheet  
19  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Electrical Parameters  
6
Graphs of the Electrical Parameters  
80  
75  
70  
65  
60  
55  
50  
3V  
ꢀ50  
ꢀ30  
ꢀ10  
10  
30  
50  
70  
90  
110  
130  
150  
Tꢀ[°C]  
Figure 6-1  
Power On Time tPON of the TLE4964-2M over Temperature  
15,5  
15  
14,5  
14  
3V  
12V  
13,5  
13  
12,5  
-50  
-30  
-10  
10  
30  
50  
T [°C]  
70  
90  
110  
130  
150  
Figure 6-2  
Signal Delay Time of the TLE4964-2M over Temperature  
Data Sheet  
20  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Electrical Parameters  
2
1,9  
1,8  
1,7  
1,6  
1,5  
1,4  
1,3  
1,2  
1,1  
1
Vs=3V  
Vs=12V  
Vs=32V  
Vs=42V  
-50  
-30  
-10  
10  
30  
50  
70  
90  
110  
130  
150  
T [°C]  
Figure 6-3  
Supply Current of the TLE4964-2M over Temperature  
2
1,9  
1,8  
1,7  
1,6  
1,5  
1,4  
1,3  
1,2  
1,1  
1
-40°C  
25°C  
150°C  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VS [V]  
Figure 6-4  
Supply Current of the TLE4964-2M over Supply Voltage  
Data Sheet  
21  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Electrical Parameters  
63,0  
62,0  
61,0  
60,0  
59,0  
58,0  
57,0  
56,0  
55,0  
54,0  
5V  
12V  
32V  
ꢀ50  
ꢀ30  
ꢀ10  
10  
30  
50  
70  
90  
110  
130  
150  
T[°C]  
Figure 6-5  
Output Current Limit of the TLE4964-2M over Temperature  
63,0  
62,0  
61,0  
60,0  
59,0  
58,0  
57,0  
56,0  
55,0  
54,0  
ꢀ40°C  
25°C  
150°C  
0
5
10  
15  
20  
25  
30  
35  
VQ [V]  
Figure 6-6  
Output Current Limit of the TLE4964-2M over applied Pull-up Voltage  
700  
600  
500  
3V  
12V  
400  
32V  
300  
200  
100  
-50 -30 -10  
10  
30  
50  
70  
90  
110 130 150  
T [°C]  
Figure 6-7  
Output Fall Time of the TLE4964-2M over Temperature  
Data Sheet  
22  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Electrical Parameters  
700  
600  
500  
400  
300  
200  
100  
-40°C  
25°C  
150°C  
0
5
10  
15  
20  
25  
30  
35  
VQ [V]  
Figure 6-8  
Output Fall Time of the TLE4964-2M over applied Pull-up Voltage  
700  
600  
3V  
12V  
32V  
500  
400  
300  
-50 -30 -10  
10  
30  
50  
70  
90  
110 130 150  
T [°C]  
Figure 6-9  
Output Rise Time of the TLE4964-2M over Temperature  
700  
600  
500  
400  
300  
200  
100  
-40°C  
25°C  
150°C  
0
5
10  
15  
20  
25  
30  
35  
VQ [V]  
Figure 6-10  
Output Rise Time of the TLE4964-2M over applied Pull-up Voltage  
Data Sheet  
23  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Electrical Parameters  
10  
1
32V  
0,1  
0,01  
0,001  
80  
90  
100  
110  
120  
130  
140  
150  
160  
170  
180  
T [°C]  
Figure 6-11  
Output Leakage Current of the TLE4964-2M over Temperature  
400  
350  
300  
250  
200  
150  
100  
50  
10mA  
15mA  
20mA  
25mA  
0
-50  
-30  
-10  
10  
30  
50  
70  
90  
110  
130  
150  
T [°C]  
Figure 6-12  
Saturation Voltage of the TLE4964-2M over Temperature  
400  
350  
300  
250  
200  
150  
100  
50  
-40°C  
25°C  
150°C  
0
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
IQ [mA]  
Figure 6-13  
Saturation Voltage of the TLE4964-2M over Output Current  
Data Sheet  
24  
Revision 1.0, 2012-07-20  
TLE4964-2M  
Graphs of the Electrical Parameters  
120  
110  
100  
90  
80  
70  
12V  
60  
50  
40  
30  
20  
-50  
-30  
-10  
10  
30  
50  
70  
90  
110  
130  
150  
T [°C]  
Figure 6-14  
Effective Noise of the TLE4964-2M Thresholds over Temperature  
0,8  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0
12V  
-50  
-30  
-10  
10  
30  
50  
70  
90  
110  
130  
150  
T [°C]  
Figure 6-15  
Output Signal Jitter of the TLE4964-2M over Temperature  
Data Sheet  
25  
Revision 1.0, 2012-07-20  
w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  

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