SP001164330 [INFINEON]
Power Field-Effect Transistor,;
| 型号： | SP001164330 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总11页 (文件大小：597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSB104N08NP3 G
OptiMOS™3 Power-MOSFET
Product Summary
Features
80
10.4
50
V
VDS
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
RDS(on),max
ID
mW
A
• Low profile (<0.7mm)
• Dual sided cooling
CanPAKTM
MG-WDSON-2
M
• Low parasitic inductance
• N-channel, normal level
Type
Package
Outline
MP
Marking
0308
BSB104N08NP3 G
MG-WDSON-2
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
Continuous drain current
50
A
V GS=10 V, T C=100 °C
32
13
V GS=10 V, T A=25 °C,
R thJA=45 K/W1)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C
200
110
±20
Avalanche energy, single pulse3)
Gate source voltage
I D=30 A, R GS=25 W
mJ
V
V GS
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
Rev. 2.1
page 1
2013-11-28
BSB104N08NP3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
42
2.8
W
T A=25 °C,
R thJA=45 K/W1)
T j, T stg
Operating and storage temperature
-40 ... 150
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
bottom
-
-
-
1.0
-
K/W
top
-
-
3.0
45
6 cm2 cooling area1)
R thJA
Device on PCB
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=40 µA
Drain-source breakdown voltage
Gate threshold voltage
80
-
-
V
2.0
2.7
3.5
V DS=80 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
10
µA
V DS=80 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
10
9.3
2.0
100 nA
R DS(on) V GS=10 V, I D=10 A
10.4
-
mW
R G
W
|V DS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
23
46
-
S
Rev. 2.1
page 2
2013-11-28
BSB104N08NP3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
1600
430
18
9
2100 pF
570
V GS=0 V, V DS=40 V,
f =1 MHz
C oss
Crss
t d(on)
t r
27
-
-
-
-
ns
4
V DD=40 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
19
4
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
8
5
11
8
nC
Q gd
V DD=40 V, I D=30 A,
V GS=0 to 10 V
Q sw
Q g
8
12
31
-
Gate charge total
23
5.0
31
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=40 V, V GS=0 V
41
nC
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
30
A
T C=25 °C
I S,pulse
200
V GS=0 V, I F=30 A,
T j=25 °C
V SD
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
0.9
43
55
1.2
V
t rr
-
-
ns
nC
V R=40 V, I F=30 A,
di F/dt =100 A/µs
Q rr
4) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-11-28
BSB104N08NP3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
45
40
35
30
25
20
15
10
5
60
50
40
30
20
10
0
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
102
101
100
10-1
10-2
10 µs
100 µs
0.5
100
0.2
0.1
1 ms
10 ms
0.05
DC
10-1
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.1
page 4
2013-11-28
BSB104N08NP3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
20
4.5 V
8 V
10 V
16
5.5 V
150
6 V
12
8 V
100
50
0
10 V
6 V
8
4
0
5.5 V
5 V
4.5V
0
1
2
3
0
50
100
150
200
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100
80
120
80
40
0
60
40
20
150 °C
25 °C
0
0
2
4
6
8
0
30
60
90
120
VGS [V]
ID [A]
Rev. 2.1
page 5
2013-11-28
BSB104N08NP3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=10 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
20
16
4
3
2
1
0
400 µA
max
12
40 µA
typ
8
4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
102
101
100
Coss
150 °C 25 °C
10
25°C, max
150°C, max
Crss
1
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VSD [V]
VDS [V]
Rev. 2.1
page 6
2013-11-28
BSB104N08NP3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
40 V
16 V
64 V
10
6
25 °C
100 °C
4
125 °C
2
1
0
1
10
100
tAV [µs]
1000
10000
0
10
20
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
90
85
80
75
70
65
60
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.1
page 7
2013-11-28
BSB104N08NP3 G
Package Outline
CanPAK™ M
MG-WDSON-2
Rev. 2.1
page 8
2013-11-28
BSB104N08NP3 G
CanPAK™ M
MG-WDSON-2
Rev. 2.1
page 9
2013-11-28
BSB104N08NP3 G
CanPAK™ M
MG-WDSON-2
Dimensions in mm
Raccomended stencil thikness 150 mm
Rev. 2.1
page 10
2013-11-28
BSB104N08NP3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 11
2013-11-28
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