SPD02N50C3_08 [INFINEON]
Cool MOS Power Transistor; 酷MOS功率晶体管
| 型号： | SPD02N50C3_08 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS Power Transistor |
| 文件： | 总11页 (文件大小：626K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
63'ꢀꢁ1ꢂꢀ&ꢃ
&RROꢄ026 3RZHUꢄ7UDQVLVWRU
)HDWXUH
V
ꢀ#ꢀT
ꢄꢅꢁ
ꢈ
9
Ω
$
DS
jmax
5
'6ꢆRQꢇ
• 1HZꢂUHYROXWLRQDU\ꢂKLJKꢂYROWDJHꢂWHFKQRORJ\
•ꢂ8OWUDꢂORZꢂJDWHꢂFKDUJH
,
ꢃꢉꢊ
'
3Gꢌ72ꢀꢄ2
• 3HULRGLFꢂDYDODQFKHꢂUDWHG
•ꢂ([WUHPHꢂGYꢋGWꢀUDWHG
• 8OWUDꢂORZꢂHIIHFWLYHꢂFDSDFLWDQFHV
• ,PSURYHGꢂWUDQVFRQGXFWDQFH
7\SH
3DFNDJH
2UGHULQJꢄ&RGH
0DUNLQJ
63'ꢁꢀ1ꢄꢁ&ꢈ
3Gꢌ72ꢀꢄꢀ
4ꢅꢍꢁꢎꢁꢌ6ꢎꢄꢍꢁ
ꢁꢀ1ꢄꢁ&ꢈ
0D[LPXPꢄ5DWLQJV
3DUDPHWHU
6\PERO
9DOXH
ꢂ
8QLW
$
&RQWLQXRXVꢂGUDLQꢂFXUUHQWꢂ
T ꢂ ꢂꢀꢄꢂ&ꢂ
,
'
ꢃꢉꢊ
ꢃꢉꢃ
ꢄꢉꢎ
ꢄꢁ
C
T ꢂ ꢂꢃꢁꢁꢂ&
C
3XOVHGꢂGUDLQꢂFXUUHQWꢏꢂt ꢂOLPLWHGꢂE\ꢂT
,
p
jmax
'ꢂSXOV
P-
$YDODQFKHꢂHQHUJ\ꢏꢂVLQJOHꢂSXOVHꢂ
(
$6
, ꢂ ꢂꢃꢉꢈꢄꢂ$ꢏꢂV ꢂ ꢂꢄꢁꢂ9
'
DD
ꢃꢇ
E
ꢁꢉꢁꢍ
ꢃꢉꢊ
$YDODQFKHꢂHQHUJ\ꢏꢂUHSHWLWLYHꢂW ꢂOLPLWHGꢂE\ꢂT
AR
$5
jmax
, ꢂ ꢂꢃꢉꢊꢂ$ꢏꢂV ꢂ ꢂꢄꢁꢂ9
'
DD
$
9
$YDODQFKHꢂFXUUHQWꢏꢂUHSHWLWLYHꢂW ꢂOLPLWHGꢂE\ꢂT
,
$5
jmax $5
Gate source voltage
V
ꢀꢁ
ꢈꢁ
GS
V
P
*DWHꢂVRXUFHꢂYROWDJHꢂ$&ꢂꢆIꢂ!ꢃ+]ꢇ
GS
tot
ꢀꢄ
:
3RZHUꢂGLVVLSDWLRQꢏꢂ7 ꢂ ꢂꢀꢄ&
&
&
2SHUDWLQJꢂDQGꢂVWRUDJHꢂWHPSHUDWXUH
7 ꢏꢂ7
Mꢂ VWJ
ꢌꢄꢄꢉꢉꢉꢂꢐꢃꢄꢁ
Reverse diode dv/dt 5)
dv/dt
15
V/ns
Rev. 2.5
PDJHꢂꢃ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
0D[LPXPꢄ5DWLQJV
3DUDPHWHU
6\PERO
9DOXH
8QLW
'UDLQꢂ6RXUFHꢂYROWDJHꢂVORSH
GYꢋGW
ꢄꢁ
9ꢋQV
V
ꢂ ꢂꢎꢁꢁꢂ9ꢏꢂ, ꢂ ꢂꢃꢉꢊꢂ$ꢏꢂT ꢂ ꢂꢃꢀꢄꢂ&
DS ' j
7KHUPDOꢄ&KDUDFWHULVWLFV
3DUDPHWHU
6\PERO
9DOXHV
8QLW
PLQꢅ
W\Sꢅ PD[ꢅ
R
ꢌ
ꢌ
ꢌ
ꢌ
ꢄ
.ꢋ:
7KHUPDOꢂUHVLVWDQFHꢏꢂMXQFWLRQꢂꢌꢂFDVH
7KHUPDOꢂUHVLVWDQFHꢏꢂMXQFWLRQꢂꢌꢂDPELHQWꢏꢂOHDGHGꢂ
60'ꢂYHUVLRQꢏꢂGHYLFHꢂRQꢂ3&%ꢑꢂꢂ
#ꢂPLQꢉꢂIRRWSULQWꢂ
thJC
R
ꢍꢄ
thJA
5
ꢂ
ꢌ
ꢌ
ꢂ
ꢌ
ꢌ
ꢂ
WK-$
ꢍꢄ
ꢄꢁ
ꢀ
ꢀꢇ
#ꢂꢅꢂFP ꢂFRROLQJꢂDUHDꢂ
6ROGHULQJꢂWHPSHUDWXUHꢏ reflow soldering, MSL3ꢂ
7
ꢂꢂꢂ
ꢌ
ꢌ
ꢀꢅꢁ &
VROGꢂ
ꢃꢉꢅꢂPPꢂꢆꢁꢉꢁꢅꢈꢂLQꢉꢇꢂIURPꢂFDVHꢂIRUꢂꢃꢁV
(OHFWULFDOꢄ&KDUDFWHULVWLFVꢆꢄDWꢂ7M ꢀꢄ&ꢂXQOHVVꢂRWKHUZLVHꢂVSHFLILHG
3DUDPHWHU
6\PERO
&RQGLWLRQV
9DOXHV
8QLW
PLQꢅ
ꢄꢁꢁ
ꢌ
W\Sꢅ PD[ꢅ
V
V
ꢁ9ꢏꢂ, ꢁꢉꢀꢄP$
ꢌ
ꢌ
ꢌ
9
'UDLQꢌVRXUFHꢂEUHDNGRZQꢂYROWDJH
'UDLQꢌ6RXUFHꢂDYDODQFKHꢂ
EUHDNGRZQꢂYROWDJH
(BR)DSS GS
'
V
ꢁ9ꢏꢂ, ꢃꢉꢊ$
ꢅꢁꢁ
9
GS
'
ꢆ%5ꢇ'6
, ꢊꢁµΑꢏꢂV V
ꢀꢉꢃ
ꢈ
ꢂ
ꢈꢉꢒ
ꢂ
*DWHꢂWKUHVKROGꢂYROWDJH
9
,
'
GS DS
*6ꢆWKꢇ
V
ꢄꢁꢁ9ꢏꢂV ꢁ9ꢏ
$
=HURꢂJDWHꢂYROWDJHꢂGUDLQꢂFXUUHQW
ꢂ
ꢌ
ꢌ
DS
GS
'66
T ꢀꢄ&ꢏ
ꢁꢉꢃ
ꢌ
ꢃ
j
T ꢃꢄꢁ&
j
ꢃꢁꢁ
V
V
ꢀꢁ9ꢏꢂV ꢁ9
ꢌ
ꢌ
ꢃꢁꢁ Q$
*DWHꢌVRXUFHꢂOHDNDJHꢂFXUUHQW
,
*66
GS
DS
ꢃꢁ9ꢏꢂꢂ, ꢃꢉꢃ$ꢏ
'UDLQꢌVRXUFHꢂRQꢌVWDWHꢂUHVLVWDQFH 5
ꢂ
ꢌ
ꢌ
ꢌ
ꢂ
ꢂ
ꢈ
ꢌ
Ω
'6ꢆRQꢇ
GS
'
T ꢀꢄ&
ꢀꢉꢍ
ꢍꢉꢈ
ꢃꢀ
j
T ꢃꢄꢁ&
j
R
I ꢃ0+]ꢏꢂRSHQꢂ'UDLQ
ꢌ
*DWHꢂLQSXWꢂUHVLVWDQFH
G
Rev. 2.5
PDJHꢂꢀ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
(OHFWULFDOꢄ&KDUDFWHULVWLFVꢄꢏꢂDWꢂT ꢂ ꢂꢀꢄꢂ&ꢏꢂXQOHVVꢂRWKHUZLVHꢂVSHFLILHG
j
3DUDPHWHU
6\PERO
&RQGLWLRQV
9DOXHV
W\Sꢅ PD[ꢅ
8QLW
6
PLQꢅ
Transconductance
g
V
≥ꢀꢓ, ꢓ5 ꢏꢂ
'6ꢆRQꢇPD[
ꢌ
ꢃꢉꢊ
ꢌ
fs
DS
'
, ꢃꢉꢃ$
'
Input capacitance
C
C
C
&
V
ꢁ9ꢏꢂV ꢀꢄ9ꢏꢂꢂ
ꢌ
ꢌ
ꢌ
ꢌ
ꢃꢒꢁ
ꢊꢁ
ꢀ
ꢌ
ꢌ
ꢌ
ꢌ
S)
iss
GS
DS
f ꢃ0+]
Output capacitance
oss
rss
Reverse transfer capacitance
ꢈꢇ
V
V
ꢁ9ꢏꢂ
(IIHFWLYHꢂRXWSXWꢂFDSDFLWDQFHꢏ
HQHUJ\ꢂUHODWHG
ꢒ
S)
QV
GS
RꢆHUꢇ
ꢁ9ꢂWRꢂꢎꢁꢁ9
DS
ꢎꢇ
(IIHFWLYHꢂRXWSXWꢂFDSDFLWDQFHꢏ
WLPHꢂUHODWHG
&
ꢌ
ꢃꢍ
ꢌ
RꢆWUꢇ
Turn-on delay time
Rise time
t
V
ꢈꢄꢁ9ꢏꢂV ꢁꢋꢃꢁ9ꢏꢂꢂ
ꢌ
ꢌ
ꢌ
ꢌ
ꢃꢁ
ꢄ
ꢌ
ꢌ
ꢌ
ꢌ
d(on)
DD
GS
, ꢃꢉꢊ$ꢏꢂR ꢀꢄΩ
t
'
G
r
Turn-off delay time
Fall time
t
ꢍꢁ
ꢃꢄ
d(off)
t
f
*DWHꢄ&KDUJHꢄ&KDUDFWHULVWLFV
Gate to source charge
Q
Q
4
V
ꢎꢁꢁ9ꢏꢂ, ꢃꢉꢊ$
ꢌ
ꢌ
ꢌ
ꢃꢉꢄ
ꢎꢉꢄ
ꢒ
ꢌ
ꢌ
ꢌ
Q&
9
gs
gd
J
DD
'
Gate to drain charge
V
V
ꢎꢁꢁ9ꢏꢂ, ꢃꢉꢊ$ꢏꢂꢂ
*DWHꢂFKDUJHꢂWRWDO
DD
'
ꢁꢂWRꢂꢃꢁ9
GS
V
ꢎꢁꢁ9ꢏꢂ, ꢃꢉꢊ$
ꢌ
ꢄ
ꢌ
*DWHꢂSODWHDXꢂYROWDJH
9ꢆSODWHDXꢇ
DD
'
ꢃ
5HSHWLWYHꢂDYDODQFKHꢂFDXVHVꢂDGGLWLRQDOꢂSRZHUꢂORVVHVꢂWKDWꢂFDQꢂEHꢂFDOFXODWHGꢂDVꢂ3$9 EARꢓfꢉ
ꢀ
'HYLFHꢂRQꢂꢎꢁPPꢓꢎꢁPPꢓꢃꢉꢄPPꢂHSR[\ꢂ3&%ꢂ)5ꢎꢂZLWKꢂꢅFPðꢂꢆRQHꢂOD\HUꢏꢂꢍꢁꢂPꢂWKLFNꢇꢂFRSSHUꢂDUHDꢂIRUꢂGUDLQꢂ
FRQQHFWLRQꢉꢂ3&%ꢂLVꢂYHUWLFDOꢂZLWKRXWꢂEORZQꢂDLUꢉ
ꢈ
&
&
RꢆHUꢇꢂLVꢂDꢂIL[HGꢂFDSDFLWDQFHꢂWKDWꢂJLYHVꢂWKHꢂVDPHꢂVWRUHGꢂHQHUJ\ꢂDVꢂCossꢂZKLOHꢂVDSꢂLVꢂULVLQJꢂIURPꢂꢁꢂWRꢂꢊꢁꢔꢂ9'66ꢉ
RꢆWUꢇꢂLVꢂDꢂIL[HGꢂFDSDFLWDQFHꢂWKDWꢂJLYHVꢂWKHꢂVDPHꢂFKDUJLQJꢂWLPHꢂDVꢂCossꢂZKLOHꢂVDSꢂLVꢂULVLQJꢂIURPꢂꢁꢂWRꢂꢊꢁꢔꢂ9'66ꢉ
ꢎ
5
ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.5
PDJHꢂꢈ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
(OHFWULFDOꢄ&KDUDFWHULVWLFVꢏꢂDWꢂT ꢂ ꢂꢀꢄꢂ&ꢏꢂXQOHVVꢂRWKHUZLVHꢂVSHFLILHG
j
3DUDPHWHU
6\PERO
&RQGLWLRQV
9DOXHV
W\Sꢅ PD[ꢅ
8QLW
PLQꢅ
T ꢀꢄ&
ꢌ
ꢌ
ꢃꢉꢊ
$
,QYHUVHꢂGLRGHꢂFRQWLQXRXV
IRUZDUGꢂFXUUHQW
,
C
6
Inverse diode direct current,
pulsed
I
ꢌ
ꢌ
ꢄꢉꢎ
SM
V
ꢁ9ꢏꢂ, , ꢂ
ꢌ
ꢌ
ꢌ
ꢌ
ꢌ
ꢃ
ꢃꢉꢀ
9
,QYHUVHꢂGLRGHꢂIRUZDUGꢂYROWDJH
Reverse recovery time
9
6'
GS
) 6
t
V ꢎꢁꢁ9ꢏꢂ, , ꢂꢏꢂ
ꢃꢊꢁ
ꢃꢉꢀ
ꢊ
ꢌ
ꢌ
ꢌ
ꢌ
QV
&
$
rr
R
) 6
di /dt ꢃꢁꢁ$ꢋV
Reverse recovery charge
Peak reverse recovery current
Q
rr
F
I
rrm
ꢀꢁꢁ
$ꢋV
3HDNꢂUDWHꢂRIꢂIDOOꢂRIꢂUHYHUVH
UHFRYHU\ꢂFXUUHQW
GL ꢋGW
UU
7\SLFDOꢄ7UDQVLHQWꢄ7KHUPDOꢄ&KDUDFWHULVWLFV
6\PERO
9DOXH
W\Sꢅ
8QLW
6\PERO
9DOXH
W\Sꢅ
8QLW
7KHUPDOꢂUHVLVWDQFH
7KHUPDOꢂFDSDFLWDQFHꢂ
ꢁꢉꢃ
.ꢋ:
ꢁꢉꢁꢁꢁꢁꢀꢊꢁꢅ
ꢁꢉꢁꢁꢁꢃꢃꢃꢈ
ꢁꢉꢁꢁꢁꢃꢅꢍꢒ
ꢁꢉꢁꢁꢁꢄꢎꢍ
ꢁꢉꢁꢁꢃꢈꢊꢊ
ꢁꢉꢁꢃꢒ
5
5
5
5
&
:Vꢋ.
WKꢃ
WKꢀ
WKꢈ
WKꢎ
WKꢃ
ꢁꢉꢃꢊꢎ
ꢁꢉꢈꢁꢅ
ꢃꢉꢀꢁꢍ
ꢁꢉꢒꢍꢎ
ꢁꢉꢀꢄꢃ
&
WKꢀ
&
WKꢈ
&
WKꢎ
5WKꢄ
&
WKꢄ
5
&
WKꢅ
WKꢅ
([WHUQDOꢂ+HDWVLQN
ꢄ
7M
5WKꢃ
5WKꢏQ
ꢂ
7FDVH
3WRWꢂꢆWꢇ
&
&
&
WKꢏQ
WKꢃ
WKꢀ
7DPE
Rev. 2.5
PDJHꢂꢎ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
ꢇꢄ3RZHUꢄGLVVLSDWLRQ
ꢁꢄ6DIHꢄRSHUDWLQJꢄDUHD
, ꢀIꢂꢆꢂ9 ꢂꢇ
3 ꢂ ꢂIꢀꢆT ꢇ
WRW
C
'ꢂ
'6
SDUDPHWHUꢂꢑꢂ'ꢂ ꢂꢁꢂꢏꢂT ꢀꢄ&
C
ꢃꢁꢂꢃꢂ
63'ꢁꢀ1ꢄꢁ&ꢈ
ꢀꢊꢂ
:
ꢂ$
ꢀꢎꢂ
ꢀꢀꢂ
ꢀꢁꢂ
ꢃꢊꢂ
ꢃꢅꢂ
ꢃꢎꢂ
ꢃꢀꢂ
ꢃꢁꢂ
ꢊꢂ
ꢃꢁꢂꢁꢂ
WSꢂ ꢂꢁꢉꢁꢁꢃꢂPV
WSꢂ ꢂꢁꢉꢁꢃꢂPV
WSꢂ ꢂꢁꢉꢃꢂPV
ꢃꢁꢂꢌꢃꢂ
WSꢂ ꢂꢃꢂPV
'&
ꢅꢂ
ꢎꢂ
ꢀꢂ
ꢃꢁꢂꢌꢀꢂ
ꢁꢂ
ꢁ
ꢀꢁ
ꢎꢁ
ꢅꢁ
ꢊꢁ ꢃꢁꢁ ꢃꢀꢁ
ꢃꢅꢁ
ꢃꢁꢂꢁꢂ
ꢃꢁꢂꢃꢂ
ꢃꢁꢂꢀꢂ
ꢃꢁꢂꢈꢂ
DS
&
ꢂ9
ꢂV
T
C
ꢃꢄ7UDQVLHQWꢄWKHUPDOꢄLPSHGDQFH
ꢂ ꢂIꢀꢆW ꢇ
ꢈꢄ7\SꢅꢄRXWSXWꢄFKDUDFWHULVWLF
, ꢂ ꢂIꢂꢆV ꢇꢕꢂꢂT ꢀꢄ&
=
WK-&
S
'
DS
j
SDUDPHWHUꢑꢂ'ꢀ ꢂW ꢋ7
SDUDPHWHUꢑꢂW ꢂꢃꢁꢂVꢏꢂV
S
Sꢂ
GS
ꢃꢁꢂꢃꢂ
ꢄꢉꢄꢂ
9ꢀꢁ
9ꢃꢁ
9ꢍ
ꢂ$
ꢂ.ꢋ:
9ꢅꢉꢄ
ꢎꢉꢄꢂ
ꢎꢂ
ꢃꢁꢂꢁꢂ
ꢃꢁꢂꢌꢃꢂ
ꢃꢁꢂꢌꢀꢂ
ꢃꢁꢂꢌꢈꢂ
9ꢅ
ꢈꢉꢄꢂ
ꢈꢂ
'ꢂ ꢂꢁꢉꢄ
'ꢂ ꢂꢁꢉꢀ
'ꢂ ꢂꢁꢉꢃ
'ꢂ ꢂꢁꢉꢁꢄ
'ꢂ ꢂꢁꢉꢁꢀ
'ꢂ ꢂꢁꢉꢁꢃ
9ꢄꢉꢄ
ꢀꢉꢄꢂ
ꢀꢂ
9ꢄ
ꢃꢉꢄꢂ
ꢃꢂ
VLQJOHꢂSXOVH
9ꢎꢉꢄ
9ꢎ
ꢃꢁ ꢃꢀ ꢃꢎ ꢃꢅ
ꢁꢉꢄꢂ
ꢁꢂ
ꢃꢁꢂꢌꢍꢂ
ꢃꢁꢂꢌꢅꢂ
ꢃꢁꢂꢌꢄꢂ
ꢃꢁꢂꢌꢎꢂ
ꢃꢁꢂꢌꢈꢂ
ꢃꢁꢂꢌꢃꢂ
ꢁ
ꢀ
ꢎ
ꢅ
ꢊ
ꢀꢁ
ꢂV
ꢂ9
ꢂV
ꢂt
p
DS
Rev. 2.5
PDJHꢂꢄ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
ꢂꢄ7\SꢅꢄRXWSXWꢄFKDUDFWHULVWLF
, ꢂ ꢂIꢂꢆV ꢇꢕꢂꢂT ꢃꢄꢁ&
ꢉꢄ7\SꢅꢄGUDLQꢊVRXUFHꢄRQꢄUHVLVWDQFH
fꢆ, ꢇ
5
'
DS
j
'6ꢆRQꢇ
'
SDUDPHWHUꢑꢂW ꢂꢃꢁꢂVꢏꢂV
SDUDPHWHUꢑꢂT ꢃꢄꢁ&ꢏꢂV
Sꢂ
GS
j
GS
ꢈꢂ
ꢀꢁꢂ
ꢂ$
ꢀꢁ9
ꢊ9
ꢂΩ
ꢎ9
ꢎꢉꢄ9
ꢍ9
ꢀꢉꢎꢂ
ꢅ9
ꢅꢉꢄ9
ꢄ9
ꢃꢅꢂ
ꢄꢏꢄ9
ꢀꢉꢃꢂ
ꢃꢉꢊꢂ
ꢃꢉꢄꢂ
ꢃꢉꢀꢂ
ꢁꢉꢒꢂ
ꢁꢉꢅꢂ
ꢁꢉꢈꢂ
ꢁꢂ
ꢅ9
ꢃꢎꢂ
ꢃꢀꢂ
ꢃꢁꢂ
ꢊꢂ
ꢄꢉꢄ9
ꢄ9
ꢎꢉꢄ9
ꢅꢂ
ꢅꢉꢄ9
ꢍ9
ꢊ9
ꢎ9
ꢎꢂ
ꢀꢁ9
ꢀꢂ
ꢁ
ꢄ
ꢃꢁ
ꢃꢄ
ꢀꢄ
ꢁ
ꢁꢉꢈ ꢁꢉꢅ ꢁꢉꢒ ꢃꢉꢀ ꢃꢉꢄ ꢃꢉꢊ ꢀꢉꢃ
ꢈ
ꢂ9
ꢂ$
ꢂ,
ꢂV
'
DS
ꢋꢄ'UDLQꢊVRXUFHꢄRQꢊVWDWHꢄUHVLVWDQFH
ꢂ ꢂIꢀꢆ7 ꢇꢂ
ꢌꢄ7\SꢅꢄWUDQVIHUꢄFKDUDFWHULVWLFVꢂ
, ꢀIꢂꢆꢀ9 ꢂꢇꢕꢂ9 ≥ꢂꢀꢂ[ꢂ, ꢂ[ꢂ5
5
'6ꢆRQꢇ
M
'
*6
'6
'
'6ꢆRQꢇPD[
SDUDPHWHUꢂꢑꢂ, ꢂ ꢂꢃꢉꢃꢂ$ꢏꢂV ꢂ ꢂꢃꢁꢂ9
SDUDPHWHUꢑꢀW ꢂ ꢂꢃꢁꢂV
'
GS
S
ꢃꢍꢂ 63'ꢁꢀ1ꢄꢁ&ꢈ
ꢄꢉꢄꢂ
Ω
ꢂ$
ꢀꢄ&
ꢃꢎꢂ
ꢃꢀꢂ
ꢃꢁꢂ
ꢊꢂ
ꢎꢉꢄꢂ
ꢎꢂ
ꢈꢉꢄꢂ
ꢈꢂ
ꢃꢄꢁ&
ꢀꢉꢄꢂ
ꢀꢂ
ꢅꢂ
ꢃꢉꢄꢂ
ꢃꢂ
ꢁꢂꢃ
ꢎꢂ
W\S
ꢀꢂ
ꢁꢉꢄꢂ
ꢁꢂ
ꢁꢂ
&
ꢌꢅꢁ
ꢌꢀꢁ
ꢀꢁ
ꢅꢁ
ꢃꢁꢁ
ꢃꢊꢁ
ꢁ
ꢃ
ꢀ
ꢈ
ꢎ
ꢄ
ꢅ
ꢍ
ꢊ
ꢃꢁ
ꢂ9
ꢂV
T
GS
j
Rev. 2.5
PDJHꢂꢅ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
ꢍꢄ7\SꢅꢄJDWHꢄFKDUJH
ꢂIꢀꢂꢆ4 ꢇꢂ
ꢇꢀꢄ)RUZDUGꢄFKDUDFWHULVWLFVꢄRIꢄERG\ꢄGLRGH
V
, ꢂ ꢂIꢂꢆ9
ꢇ
6'
GS
*DWH
)
ꢂ
SDUDPHWHUꢑꢂ, ꢂ ꢂꢃꢉꢊꢂ$ꢂSXOVHG
SDUDPHWHUꢑꢂ7 ꢂꢏꢂWSꢂ ꢂꢃꢁꢂV
'
M
ꢃꢁꢂꢃꢂ
ꢃꢅꢂ 63'ꢁꢀ1ꢄꢁ&ꢈ
63'ꢁꢀ1ꢄꢁ&ꢈ
9
$
ꢃꢀꢂ
ꢃꢁꢂꢁꢂ
ꢁꢉꢀ VDS max
ꢂ
ꢃꢁꢂ
ꢁꢉꢊꢂVDS max
ꢊꢂ
ꢅꢂ
ꢎꢂ
ꢀꢂ
ꢁꢂ
ꢃꢁꢂꢌꢃꢂ
7Mꢂ ꢂꢀꢄꢂ&ꢂW\S
7Mꢂ ꢂꢃꢄꢁꢂ&ꢂW\S
7Mꢂ ꢂꢀꢄꢂ&ꢂꢆꢒꢊꢔꢇ
7Mꢂ ꢂꢃꢄꢁꢂ&ꢂꢆꢒꢊꢔꢇ
ꢃꢁꢂꢌꢀꢂ
Q&
ꢁ
ꢀ
ꢎ
ꢅ
ꢊ
ꢃꢁ
ꢃꢈ
*DWH
ꢁ
ꢁꢉꢎ
ꢁꢉꢊ
ꢃꢉꢀ
ꢃꢉꢅ
ꢀ
ꢀꢉꢎ
ꢈ
9
4
9
6'
ꢇꢇꢄ$YDODQFKHꢄ62$
ꢂ ꢂIꢂꢆW
ꢇꢁꢄ$YDODQFKHꢄHQHUJ\ꢄꢄꢄ
( ꢂ ꢂIꢀꢆT ꢇ
$6
,
ꢇ
$5
$5
j
SDUꢉꢑꢂT ꢂ≤ꢂꢃꢄꢁꢂ&
SDUꢉꢑꢂ, ꢂ ꢂꢃꢉꢈꢄꢂ$ꢏꢂV ꢂ ꢂꢄꢁꢂ9
j
'
DD
ꢀꢂ
ꢄꢁꢂ
ꢂ$
P-
ꢃꢉꢅꢂ
ꢃꢉꢎꢂ
ꢃꢉꢀꢂ
ꢃꢂ
7
ꢀꢄ&
Mꢆ67$57ꢇ
ꢈꢁꢂ
ꢀꢁꢂ
ꢃꢁꢂ
ꢁꢂ
ꢁꢉꢊꢂ
7
ꢃꢀꢄ&
Mꢆ67$57ꢇ
ꢁꢉꢅꢂ
ꢁꢉꢎꢂ
ꢁꢉꢀꢂ
ꢁꢂ
ꢃꢁꢂꢌꢈꢂ ꢃꢁꢂꢌꢀꢂ ꢃꢁꢂꢌꢃꢂ ꢃꢁꢂꢁꢂ ꢃꢁꢂꢃꢂ ꢃꢁꢂꢀꢂ
ꢃꢁꢂꢎꢂ
ꢀꢁ
ꢎꢁ
ꢅꢁ
ꢊꢁ
ꢃꢁꢁ
ꢃꢀꢁ
ꢃꢅꢁ
&
ꢂV
ꢂW
T
$5
j
Rev. 2.5
PDJHꢂꢍ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
ꢇꢃꢄ'UDLQꢊVRXUFHꢄEUHDNGRZQꢄYROWDJH
ꢂ ꢂIꢀꢆT ꢇ
ꢇꢈꢄ$YDODQFKHꢄSRZHUꢄORVVHV
3 ꢂ ꢂIꢂꢆfꢂꢇ
$5
V
(BR)DSS
j
SDUDPHWHUꢑꢂE ꢁꢉꢁꢍP-
AR
63'ꢁꢀ1ꢄꢁ&ꢈ
ꢍꢁꢂ
ꢅꢁꢁꢂ
9
ꢂ:
ꢄꢍꢁꢂ
ꢄꢅꢁꢂ
ꢄꢄꢁꢂ
ꢄꢎꢁꢂ
ꢄꢈꢁꢂ
ꢄꢀꢁꢂ
ꢄꢃꢁꢂ
ꢄꢁꢁꢂ
ꢎꢒꢁꢂ
ꢎꢊꢁꢂ
ꢎꢍꢁꢂ
ꢎꢅꢁꢂ
ꢎꢄꢁꢂ
ꢄꢁꢂ
ꢎꢁꢂ
ꢈꢁꢂ
ꢀꢁꢂ
ꢃꢁꢂ
ꢁꢂ
ꢌꢅꢁ
ꢌꢀꢁ
ꢀꢁ
ꢅꢁ
ꢃꢁꢁ
ꢃꢊꢁ
ꢃꢁꢂꢎꢂ
ꢃꢁꢂꢄꢂ
ꢃꢁꢂꢅꢂ
&
+]
T
ꢂf
j
ꢇꢂꢄ7\SꢅꢄFDSDFLWDQFHV
&ꢂ ꢂIꢀꢆV
ꢇꢉꢄ7\SꢅꢄC ꢄVWRUHGꢄHQHUJ\
oss
ꢇ
(
fꢆV
ꢇ
DS
DS
RVV
SDUDPHWHUꢑꢂV ꢁ9ꢏꢂI ꢃꢂ0+]
GS
ꢃꢁꢂꢎꢂ
ꢃꢉꢀꢂ
ꢂS)
ꢂ-
ꢃꢁꢂꢈꢂ
&LVV
ꢁꢉꢊꢂ
ꢁꢉꢅꢂ
ꢁꢉꢎꢂ
ꢁꢉꢀꢂ
ꢁꢂ
ꢃꢁꢂꢀꢂ
&RVV
ꢃꢁꢂꢃꢂ
&UVV
ꢃꢁꢂꢁꢂ
ꢃꢁꢂꢌꢃꢂ
ꢁ
ꢃꢁꢁ
ꢀꢁꢁ
ꢈꢁꢁ
ꢄꢁꢁ
DS
ꢁ
ꢃꢁꢁ
ꢀꢁꢁ
ꢈꢁꢁ
ꢄꢁꢁ
DS
ꢂ9
ꢂ9
ꢂV
ꢂV
Rev. 2.5
PDJHꢂꢊ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
'HILQLWLRQꢂRIꢂGLRGHVꢂVZLWFKLQJꢂFKDUDFWHULVWLFV
Rev. 2.5
PDJHꢂꢒ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
3Gꢌ72ꢀꢄꢀꢌꢈꢌꢃ, PG-TO252-3-11, PG-TO252-3-21ꢂꢆ'ꢌ3$.ꢇ
Rev. 2.5
PDJHꢂꢃꢁ
ꢀꢁꢁ8-04-10
63'ꢀꢁ1ꢂꢀ&ꢃ
Rev. 2.5
PDJHꢂꢃꢃ
ꢀꢁꢁ8-04-10
相关型号：
SPD02N60C3BTMA1
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
INFINEON
SPD02N60S5BTMA1
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
INFINEON
SPD02N80C3BTMA1
Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 2/3 PIN
INFINEON
SPD02N80C3_08
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
INFINEON
©2020 ICPDF网 联系我们和版权申明