SPD02N60C3 [INFINEON]
Cool MOS™ Power Transistor; 酷MOS ™功率晶体管
| 型号： | SPD02N60C3 |
| 厂家： | 
Infineon |
| 描述： | Cool MOS™ Power Transistor |
| 文件： | 总12页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD02N60C3
SPU02N60C3
Final data
Cool MOS™ Power Transistor
V
@ T
650
3
1.8
V
Ω
A
DS
jmax
Feature
R
DS(on)
• New revolutionary high voltage technology
• Ultra low gate charge
I
D
P-TO251
P-TO252
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Type
SPD02N60C3
Package
P-TO252
Ordering Code
Q67040-S4420
Marking
02N60C3
SPU02N60C3
P-TO251
-
02N60C3
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T = 25 °C
1.8
1.1
5.4
50
C
T = 100 °C
C
Pulsed drain current, t limited by T
Avalanche energy, single pulse
I
E
p
jmax
D puls
mJ
AS
I = 1.35 A, V = 50 V
Avalanche energy, repetitive t limited by T
D
DD
jmax
E
0.07
1.8
AR
AR
I = 1.8 A, V = 50 V
D
DD
A
V
Avalanche current, repetitive t limited by T
Gate source voltage static
I
AR
jmax AR
V
±20
±30
25
GS
V
P
Gate source voltage AC (f >1Hz)
GS
tot
W
°C
Power dissipation, T = 25°C
C
Operating and storage temperature
T , T
-55... +150
Page 1
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
50
V/ns
V
= 480 V, I = 1.8 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
5
K/W
Thermal resistance, junction - case
thJC
R
-
-
75
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJA
R
thJA
-
-
-
-
75
50
2
2)
@ 6 cm cooling area
Soldering temperature,
T
-
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V, I =0.25mA 600
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =0.25A
-
700
V
GS
D
(BR)DS
I =80µΑ, V =V
2.1
3
3.9
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
µA
DS
GS
DSS
T =25°C,
-
-
0.5
-
1
50
j
T =150°C
j
V
V
=30V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GSS
GS
GS
DS
=10V, I =1.1A,
Ω
DS(on)
D
T =25°C
-
-
-
2.7
7.3
9
3
-
-
j
T =150°C
j
R
f=1MHz, open Drain
Gate input resistance
G
Page 2
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
S
min.
Transconductance
g
V
≥2*I *R
DS(on)max
,
-
1.75
-
fs
DS
D
I =1.1A
D
Input capacitance
C
V
=0V, V =25V,
-
-
-
-
200
90
4
-
-
-
-
pF
iss
GS
DS
f=1MHz
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
3)
V
V
=0V,
Effective output capacitance,
energy related
Effective output capacitance,
time related
C
8.1
pF
ns
GS
o(er)
=0V to 480V
DS
4)
C
-
15.7
-
o(tr)
Turn-on delay time
t
V
=350V, V =0/10V,
-
-
-
-
6
3
68
12
-
-
70
30
d(on)
DD
GS
I =1.8A, R =25Ω
Rise time
t
D
G
r
Turn-off delay time
Fall time
t
d(off)
t
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=420V, I =1.8A
-
-
-
1.6
3.8
9.5
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=420V, I =1.8A,
12.5
Gate charge total
DD
D
=0 to 10V
GS
V
=420V, I =1.8A
-
5.5
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS
.
4
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Page 3
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
1.8
5.4
1.2
350 ns
-
-
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
SM
pulsed
V
=0V, I =I
F S
-
-
-
-
-
1
200
1.3
9
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =420V, I =I ,
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
µC
A
F
rr
I
rrm
-
200 A/µs
Peak rate of fall of reverse
recovery current
di /dt
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.1
K/W
0.00002806
0.0001113
0.0001679
0.000547
0.001388
0.019
R
R
R
R
Rth5
R
C
Ws/K
th1
th2
th3
th4
th1
0.184
0.306
1.207
0.974
0.251
C
th2
C
th3
C
th4
C
th5
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 1
SPD02N60C3
28
W
A
24
22
20
18
16
14
12
10
8
10 0
10 -1
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ,ms
DC
6
4
2
10 -2
0
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
DS
°C
V
V
T
C
3 Transient thermal impedance
= f (t )
4 Typ. output characteristic
I = f (V ); T =25°C
Z
thJC
p
D
DS
j
parameter: D = t /T
parameter: t = 10 µs, V
p
p
GS
10 1
5.5
A
V20
K/W
V10
V7
V6.5
4.5
4
10 0
10 -1
10 -2
10 -3
V6
3.5
3
D = 0.5
D = 0.2
D = 0.1
V5.5
2.5
2
D = 0.05
D = 0.02
D = 0.01
V5
1.5
1
single pulse
V4.5
V4
10 12 14 16
0.5
0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -1
0
2
4
6
8
20
s
V
DS
t
V
p
Page 5
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
5 Typ. output characteristic
I = f (V ); T =150°C
6 Typ. drain-source on resistance
=f(I )
R
D
DS
j
DS(on)
D
parameter: t = 10 µs, V
parameter: T =150°C, V
p
GS
j
GS
3
20
A
20V
8V
Ω
4V 4.5V
5V
7V
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
6V
5,5V
6.5V
16
14
12
10
8
5.5V
5V
6V
4.5V
6
6.5V
7V
4V
4
8V
20V
2
0
5
10
15
25
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
3
V
A
D
I
V
DS
7 Drain-source on-state resistance
= f (T )
8 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
DS(on)max
R
DS(on)
j
D
GS
DS
D
parameter : I = 1.1 A, V = 10 V
parameter: t = 10 µs
D
GS
p
SPD02N60C3
17
5.5
Ω
A
25°C
14
12
10
8
4.5
4
3.5
3
150°C
2.5
2
6
1.5
1
98%
4
typ
2
0.5
0
0
°C
-60
-20
20
60
100
180
0
2
4
6
8
10 12 14 16
20
V
V
T
GS
j
Page 6
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
9 Typ. gate charge
= f (Q
10 Forward characteristics of body diode
I = f (V )
V
)
GS
Gate
F
SD
parameter: I = 1.8 A pulsed
parameter: T , tp = 10 µs
D
10 1
SPD02N60C3
SPD02N60C3
16
V
A
12
10 0
0.2 VDS max
10
0.8 VDS max
8
6
4
2
0
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
nC
0
2
4
6
8
10
12
15
0
0.4
0.8
1.2
1.6
2
2.4
3
V
Q
V
Gate
SD
11 Typ. drain current slope
di/dt = f(R ), inductive load, T = 125°C
12 Typ. switching time
t = f (R ), inductive load, T =125°C
G
j
G
j
par.: V =380V, V =0/+13V, I =1.8A
par.: V =380V, V =0/+13V, I =1.8 A
DS
GS
D
DS
GS
D
1000
400
ns
A/µs
di/dt(on)
300
250
200
150
100
50
td(off)
600
400
200
0
tf
td(on)
tr
di/dt(off)
40 80
0
0
120
160
200
280
0
40
80
120
160
200
260
Ω
Ω
R
R
G
G
Page 7
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
13 Typ. switching time
t = f (I ), inductive load, T =125°C
14 Typ. drain source voltage slope
dv/dt = f(R ), inductive load, T = 125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =25Ω
par.: V =380V, V =0/+13V, I =1.8A
DS
GS
G
DS
GS
D
85000
90
ns
tdoff
V/ns
70
60
50
40
30
20
10
0
45000
25000
5000
dv/dt(on)
tf
tdon
tr
dv/dt(off)
40 80
0.25
0.5
0.75
1
1.25
1.5
2
0
120
160
200
280
A
Ω
I
R
D
G
15 Typ. switching losses
E = f (I ), inductive load, T =125°C
16 Typ. switching losses
E = f(R ), inductive load, T =125°C
D
j
G
j
par.: V =380V, V =0/+13V, R =25Ω
par.: V =380V, V =0/+13V, I =1.8A
DS
GS
G
DS
GS
D
0.01
0.0425
mWs
mWs
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.0325
0.0275
0.0225
0.0175
0.0125
0.0075
0.0025
Eon
Eon
Eoff
Eoff
160
0.25
0.5
0.75
1
1.25
1.5
2
0
40
80
120
200
280
A
Ω
I
R
D
G
Page 8
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
17 Avalanche SOA
= f (t )
18 Avalanche energy
E = f (T )
AS
I
AR
AR
j
par.: T ≤ 150 °C
par.: I = 1.35 A, V = 50 V
j
D
DD
2
50
A
mJ
1.6
1.4
1.2
1
T
=25°C
j(START)
30
20
10
0
0.8
T
=125°C
j(START)
0.6
0.4
0.2
0
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
20
40
60
80
100
120
160
°C
µs
t
T
AR
j
19 Drain-source breakdown voltage
= f (T )
20 Avalanche power losses
P = f (f )
AR
V
(BR)DSS
j
parameter: E =0.07mJ
AR
SPD02N60C3
70
720
V
W
680
660
640
620
600
580
560
540
50
40
30
20
10
0
-60
-20
20
60
100
180
10 4
10 5
10 6
°C
Hz
T
f
j
Page 9
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
22 Typ. C
21 Typ. capacitances
stored energy
oss
C = f (V )
E
=f(V )
DS
oss
DS
parameter: V =0V, f=1 MHz
GS
10 4
1.8
pF
µJ
1.4
1.2
1
10 3
Ciss
10 2
0.8
0.6
0.4
0.2
0
Coss
10 1
Crss
10 0
0
100
200
300
400
600
DS
0
100
200
300
400
600
DS
V
V
V
V
Definition of diodes switching characteristics
Page 10
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
P-TO-252-3-1 (D-PAK)
P-TO-251-3-1 (I-PAK)
+0.15
6.5
-0.10
+0.05
-0.10
2.3
A
+0.08
-0.04
B
±0.1
5.4
0.9
C
0.15 max
per side
+0.08
±0.1
0.5
3 x 0.75
2.28
-0.04
1.0
4.56
M
0.25
A B C
GPT09050
All metal surfaces tin plated, except area of cut.
Page 11
2003-10-02
SPD02N60C3
SPU02N60C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 12
2003-10-02
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