SPD02N60S5BTMA1 [INFINEON]
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3;
| 型号： | SPD02N60S5BTMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 局域网 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：714K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPU02N60S5
SPD02N60S5
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
V
600
3
1.8
V
Ω
A
DS
R
DS(on)
I
D
• Ultra low gate charge
PG-TO252
PG-TO251
• Periodic avalanche rated
• Extreme dv/dt rated
2
3
• Ultra low effective capacitances
• Improved transconductance
3
1
2
1
Type
SPU02N60S5
SPD02N60S5
Package
PG-TO251
PG-TO252
Ordering Code
Q67040-S4226
Q67040-S4213
Marking
02N60S5
02N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T
= 25 °C
= 100 °C
1.8
1.1
3.2
50
C
C
T
Pulsed drain current,
t
limited by
T
jmax
I
E
p
D puls
mJ
Avalanche energy, single pulse
= 1.35 A, = 50 V
AS
I
V
DD
D
E
0.07
1.8
Avalanche energy, repetitive
t
limited by
limited by
T
jmax
AR
AR
I
= 1.8 A,
V
= 50 V
D
DD
A
V
Avalanche current, repetitive
t
T
I
AR
jmax AR
Gate source voltage
V
±20
30
25
GS
V
P
T
Gate source voltage AC (f >1Hz)
GS
tot
Power dissipation, T = 25°C
W
°C
C
Operating and storage temperature
,
T
-55... +150
Page 1
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain Source voltage slope
dv/dt
20
V/ns
V
= 480 V, I = 1.8 A, T = 125 °C
D j
DS
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
R
-
-
-
5
75
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
thJC
R
-
thJA
R
thJA
-
-
-
-
75
50
2
2)
@ 6 cm cooling area
Soldering temperature, *)
T
-
-
260 °C
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ. max.
V
V
=0V, I =0.25mA 600
-
-
-
V
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
(BR)DSS GS
D
V
=0V, I =1.8A
-
700
V
GS
D
(BR)DS
I =80µΑ, V =V
3.5
4.5
5.5
Gate threshold voltage
Zero gate voltage drain current
V
I
D
GS DS
GS(th)
V
=600V, V =0V,
µA
DS
GS
DSS
T =25°C,
-
-
0.5
-
1
50
j
T =150°C
j
V
V
=20V, V =0V
-
-
100 nA
Gate-source leakage current
Drain-source on-state resistance R
I
GSS
GS
DS
=10V, I =1.1A,
Ω
DS(on)
GS
D
T =25°C
-
-
2.7
7.3
3
-
j
T =150°C
j
*) TO252: reflow soldering, MSL3; TO251: wavesoldering
Page 2
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
Electrical Characteristics , at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Characteristics
Transconductance
g
V
≥2*I *R ,
DS(on)max
-
1.4
-
S
fs
DS
D
I =1.1A
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
V
=0V, V =25V,
-
-
-
-
-
-
-
240
77
4.4
35
35
35
-
-
-
-
-
pF
iss
GS
DS
f=1MHz
C
oss
C
rss
t
V
=350V, V =0/10V,
ns
d(on)
DD
GS
I =1.8A, R =50Ω
t
D
G
r
Turn-off delay time
Fall time
t
42
30
d(off)
t
20
f
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
V
=350V, I =1.8A
-
-
-
2.3
4.5
7.3
-
-
nC
V
gs
gd
g
DD
D
Gate to drain charge
V
V
=350V, I =1.8A,
9.5
Gate charge total
DD
D
=0 to 10V
GS
V
=350V, I =1.8A
-
8
-
Gate plateau voltage
V(plateau)
DD
D
1
2
Repetitve avalanche causes additional power losses that can be calculated asP =E *f.
AR
AV
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 3
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
T =25°C
-
-
1.8
3.2
1.2
A
Inverse diode continuous
forward current
I
C
S
Inverse diode direct current,
I
-
-
SM
pulsed
V
=0V, I =I
F S
-
-
-
1
V
Inverse diode forward voltage
Reverse recovery time
V
GS
SD
t
V =350V, I =I ,
860 1460 ns
1.6 µC
rr
R
F S
di /dt=100A/µs
Reverse recovery charge
Q
-
F
rr
Typical Transient Thermal Characteristics
Symbol
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal resistance
Thermal capacitance
0.1
K/W
0.00002806
0.0001113
0.0001679
0.000547
0.001388
0.019
R
R
R
R
Rth5
R
C
Ws/K
th1
th2
th3
th4
th1
0.184
0.306
1.207
0.974
0.251
C
th2
C
th3
C
th4
C
th5
C
th6
th6
External Heatsink
Tj
Rth1
Rth,n
Tcase
Ptot (t)
Cth1
Cth2
Cth,n
Tamb
Page 4
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
1 Power dissipation
= f (T )
2 Safe operating area
I = f ( V
P
)
DS
tot
C
D
parameter : D = 0 , T =25°C
C
10 1
SPU02N60S5
28
W
A
24
22
20
18
16
14
12
10
8
10 0
tp = 0.001 ms
10 -1
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
6
4
2
10 -2
0
0
20
40
60
80 100 120
160
10 0
10 1
10 2
10 3
°C
V
V
T
DS
C
3 Typ. output characteristic
I = f (V ); T =25°C
4 Drain-source on-state resistance
= f (T )
R
D
DS
j
DS(on)
j
parameter: t = 10 µs, V
parameter : I = 1.1 A, V = 10 V
p
GS
D
GS
SPU02N60S5
6
17
20V
12V
Ω
A
14
12
10
8
4
3
2
1
0
10V
9V
8.5V
6
8V
98%
4
7.5V
typ
2
7V
6V
0
°C
0
5
10
15
25
-60
-20
20
60
100
180
V
V
T
DS
j
Page 5
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
5 Typ. transfer characteristics
I = f ( V ); V ≥ 2 x I x R
6 Typ. gate charge
= f (Q
V
)
Gate
D
GS
DS
D
DS(on)max
GS
parameter: t = 10 µs
parameter: I = 1.8 A pulsed
p
D
SPU02N60S5
6
16
V
A
0.2 VDS max
0.8 VDS max
12
4
3
2
1
0
10
8
6
4
2
0
nC
0
4
8
12
20
0
1
2
3
4
5
6
7
8
10
V
GS
Q
V
Gate
7 Forward characteristics of body diode
I = f (V )
8 Avalanche SOA
= f (t )
I
F
SD
AR
AR
parameter: T , tp = 10 µs
par.: T ≤ 150 °C
j
10 1
SPU02N60S5
2
A
A
1.6
1.4
1.2
1
T
=25°C
j(START)
10 0
0.8
T
=125°C
j(START)
10 -1
0.6
0.4
0.2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -2
0
0.4
0.8
1.2
1.6
2
2.4
3
10 -3 10 -2 10 -1 10 0 10 1 10 2
10 4
V
V
µs
AR
t
SD
Page 6
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
9 Avalanche energy
= f (T )
10 Drain-source breakdown voltage
= f (T )
E
V
(BR)DSS
AS
j
j
par.: I = 1.35 A, V = 50 V
D
DD
SPU02N60S5
50
720
V
mJ
680
660
640
620
600
580
560
540
30
20
10
0
20
40
60
80
100
120
160
-60
-20
20
60
100
180
°C
°C
T
T
j
j
11 Typ. capacitances
C = f (V )
DS
parameter: V =0V, f=1 MHz
GS
10 4
pF
10 3
C
iss
10 2
10 1
10 0
C
oss
C
rss
0
10 20 30 40 50 60 70 80
100
V
V
DS
Page 7
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
Definition of diodes switching characteristics
Page 8
Rev. 2.5
2008-04-07
SPU02N60S5
SPD02N60S5
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
Rev. 2.5
Page 9
2008-04-07
SPU02N60S5
SPD02N60S5
PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
Rev. 2.5
Page 10
2008-04-07
SPU02N60S5
SPD02N60S5
Page 11
Rev. 2.5
2008-04-07
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