SPD07N20GXT [INFINEON]
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3;
| 型号： | SPD07N20GXT |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 局域网 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD 07N20 G
SIPMOS Power Transistor
Product Summary
Features
Drain source voltage
200
0.4
7
V
V
DS
• N channel
Drain-Source on-state resistance
Continuous drain current
R
Ω
DS(on)
• Enhancement mode
A
I
D
• Avalanche rated
• dv/dt rated
2
1
1
3
2
3
Pin 1 Pin 2 Pin 3
Type
Package
Pb-free
Yes
Packaging
Tape and Reel
Tube
G
D
S
SPD07N20 G
SPU07N20 G
PG-TO252
PG-TO251
Yes
Maximum Ratings, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
A
I
D
T = 25 ˚C
7
C
T = 100 ˚C
4.5
C
Pulsed drain current
28
IDpulse
T = 25 ˚C
C
Avalanche energy, single pulse
120
mJ
E
E
AS
I = 7 A, V = 50 V, R = 25 Ω
D
DD
GS
4
6
Avalanche energy, periodic limited by T
Reverse diode dv/dt
jmax
AR
kV/µs
dv/dt
I = 7 A, V = 160 V, di/dt = 200 A/µs,
S
DS
T
= 175 ˚C
jmax
Gate source voltage
Power dissipation
V
V
P
±20
GS
40
W
tot
T = 25 ˚C
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55... +175
55/150/56
˚C
T , T
j
stg
Rev. 2.5
Page 1
2013-06-27
SPD 07N20 G
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
-
-
3.1 K/W
100
R
thJC
-
R
thJA
R
thJA
-
-
-
-
75
50
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
200
2.1
typ. max.
Static Characteristics
Drain- source breakdown voltage
-
-
V
V
V
(BR)DSS
V
= 0 V, I = 0.25 mA
D
GS
3
4
Gate threshold voltage, V = V
GS
DS
GS(th)
I = 1 mA
D
Zero gate voltage drain current
µA
I
DSS
V
V
= 200 V, V = 0 V, T = 25 ˚C
-
-
0.1
-
1
DS
DS
GS
j
= 200 V, V = 0 V, T = 125 ˚C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
-
10
100 nA
I
GSS
V
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
= 10 V, I = 4.5 A
D
-
0.3
0.4
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.5
Page 2
2013-06-27
SPD 07N20 G
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Transconductance
3
-
4.2
400
85
-
S
g
fs
V
≥2*I *R
, I = 4.5 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
530 pF
130
C
C
C
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
oss
rss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
45
70
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 3 A,
-
10
15
60
75
40
ns
t
d(on)
V
DD
GS
D
R = 50 Ω
G
Rise time
-
-
-
40
55
30
t
r
V
= 30 V, V = 10 V, I = 3 A,
GS D
DD
R = 50 Ω
G
Turn-off delay time
= 30 V, V = 10 V, I = 3 A,
t
d(off)
V
DD
GS
D
R = 50 Ω
G
Fall time
t
f
V
= 30 V, V = 10 V, I = 3 A,
GS D
DD
R = 50 Ω
G
Rev. 2.5
Page 3
2013-06-27
SPD 07N20 G
Electrical Characteristics, at T = 25 ˚C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Gate to source charge
-
-
-
-
5
10
21
7
7.5 nC
Q
Q
gs
V
= 160 V, I = 7 A
D
DD
Gate to drain charge
= 160 V, I = 7 A
22.5
31.5
-
gd
V
DD
D
Gate charge total
= 160 V, I = 7 A, V = 0 to 10 V
Q
g
V
DD
D
GS
Gate plateau voltage
= 160 V, I = 7 A
V
V
(plateau)
V
DD
D
Reverse Diode
Inverse diode continuous forward current
-
-
-
-
-
-
7
A
I
I
S
T = 25 ˚C
C
Inverse diode direct current,pulsed
-
28
SM
T = 25 ˚C
C
Inverse diode forward voltage
1.3
200
0.6
1.7
300
0.9
V
V
SD
V
= 0 V, I = 14 A
F
GS
Reverse recovery time
V = 100 V, I =I , di /dt = 100 A/µs
ns
µC
t
rr
R
F
S
F
Reverse recovery charge
Q
rr
V = 100 V, I =l , di /dt = 100 A/µs
R
F S
F
Rev. 2.5
Page 4
2013-06-27
SPD 07N20 G
Drain current
Power Dissipation
I = f (T )
P
= f (T )
C
D
C
tot
parameter: V ≥ 10 V
GS
SPD07N20
SPD07N20
45
7.5
A
W
6.0
5.5
5.0
35
30
25
20
15
10
5
4.5
I
P
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
˚C
˚C
0
20
40
60
80 100 120
160
20
40
60
80 100 120
160
0
T
T
C
C
Transient thermal impedance
= f (t )
Safe operating area
I = f (V
Z
)
DS
thJC
p
D
parameter : D = t /T
parameter : D = 0 , T = 25 ˚C
p
C
SPD07N20
10 1
SPD07N20
10 2
K/W
A
= 22.0µs
100 µs
t
p
I
10 0
V
10 1
R
Z
I
10 -1
1 ms
D = 0.50
0.20
10 0
0.10
10 ms
0.05
10 -2
0.02
0.01
single pulse
DC
10 2
10 -3
10 -1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 0
10 1
10 3
s
V
t
V
p
DS
Rev. 2.5
Page 5
2013-06-27
SPD 07N20 G
Typ. output characteristics
I = f (V
Typ. drain-source-on-resistance
= f (I )
)
DS
D
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
GS
SPD07N20
SPD07N20
17
A
Ptot = 40W
1.3
Ω
a
b
c
e
d
l
j
i
k
h
f
g
V
[V]
GS
a
14
12
10
8
1.1
1.0
0.9
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
b
c
d
e
f
e
I
0.8
R
0.7
0.6
0.5
0.4
0.3
0.2
g
h
i
d
j
6
k
l
c
a
4
f
g
k
h
b
j
l
i
2
V
[V] =
GS
a
b
c
d
e
6.0
f
0.1
0.0
g
7.0
k
h
l
i
j
4.0 4.5
5.0 5.5
6.5
10.0 20.0
7.5 8.0 9.0
0
V
0
2
4
6
8
11
A
0
2
4
6
8
12
V
DS
I
D
Typ. forward transconductance
Typ. transfer characteristics I = f (V
)
GS
D
g = f(I ); T = 25˚C
parameter: t = 80 µs
fs
D
j
p
parameter: g
V
≥ 2 x I x R
fs
DS
D
DS(on) max
13
A
6
11
10
9
S
4
8
I
g
7
3
2
1
0
6
5
4
3
2
1
0
V
0
1
2
3
4
5
6
7
8
10
0
2
4
A
10 12 14 16 18
21
6
8
V
GS
I
D
Rev. 2.5
Page 6
2013-06-27
SPD 07N20 G
Gate threshold voltage
= f (T )
Drain-source on-resistance
= f (T )
V
GS(th)
j
R
DS(on)
j
parameter : V = V , I = 1 mA
GS
DS D
parameter : I = 4.5 A, V = 10 V
D
GS
SPD07N20
5.0
V
1.8
Ω
4.4
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
max
V
R
typ
98%
typ
min
˚C
-60
-20
20
60
100
160
˚C
-60
-20
20
60
100
140
200
T
j
T
j
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
I = f (V
)
)
SD
DS
F
parameter: V = 0 V, f = 1 MHz
parameter: T , t = 80 µs
GS
j
p
10 4
SPD07N20
10 2
pF
A
10 3
10 2
10 1
10 1
10 0
10 -1
I
C
iss
C
C
oss
rss
= 25 ˚C typ
Tj
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
V
0
5
10
15
20
25
30
40
V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.0
V
DS
V
SD
Rev. 2.5
Page 7
2013-06-27
SPD 07N20 G
Avalanche Energy E = f (T )
Typ. gate charge
AS
j
parameter: I = 7 A, V = 50 V
V
= f (Q
Gate
)
D
DD
GS
parameter: I
= 7 A
R
= 25 Ω
D puls
GS
SPD07N20
130
mJ
16
V
110
100
90
80
70
60
50
40
30
20
10
0
12
10
8
V
V
DS max
0,2
0,8
DS max
E
V
6
4
2
0
˚C
20
40
60
80
100
120
160
34
28 nC
Q
0
4
8
12
16
20
24
T
j
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
SPD07N20
245
V
235
230
225
220
215
210
205
200
195
190
185
180
V
˚C
-60
-20
20
60
100
180
T
j
Rev. 2.5
Page 8
2013-06-27
SPD 07N20 G
Package outline: PG-TO252-3
Rev. 2.5
Page 9
2013-06-27
SPD 07N20 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.5
Page 10
2013-06-27
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