SPN01N50M2 [INFINEON]
Small Signal Field-Effect Transistor, 0.33A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,;
| 型号： | SPN01N50M2 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.33A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN01N50M2
Target data sheet
D,2/4
Cool MOS Small-Signal-Transistor
4
• New revolutionary high voltage technology
• Ultra low gate charge
3
• Extreme dv/dt rated
G,1
2
• Optimized capacitances
S,3
1
VPS05163
• Improved noise immunity
• Former development designation:
SPUx7N60S5/SPDx7N60S5
COOLMOS
Power Semiconductors
Type
V
I
R
DS(on)
Package
Marking Ordering Code
DS
D
SPN01N50M2 500 V 0.33 A
SOT-223
01N50M2 Q67040-S4326
6 Ω
Maximum Ratings, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
T = 25 °C
I
D
0.33
0.2
C
T = 100 °C
C
Pulsed drain current, t = 1ms 1)
I
0.7
p
D puls
T = 25 °C
C
Reverse diode dv/dt
dv/dt
6
kV/µs
I = 0.33 A, V <V , di/dt = 100 A/µs,
DSS
S
DS
T
= 150 °C
jmax
Gate source voltage
Power dissipation
V
V
±20
GS
P
1.8
W
tot
T = 25 °C
C
Operating and storage temperature
T , T
-55... +150
°C
j
stg
1
1999-10-11
SPN01N50M2
Target data sheet
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25 °C, unless otherwise specified
min.
typ.
max.
j
Thermal Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
R
-
-
tbd
K/W
K/W
thJS
R
thJA
-
-
-
-
110
70
2
2)
@ 6 cm cooling area
Static Characteristics
Drain- source breakdown voltage
V
V
500
-
-
V
(BR)DSS
GS(th)
DSS
V
= 0 V, I = 0.25 mA
D
GS
Gate threshold voltage, V = V
2.3
3
3.7
GS
DS
I = 250 µA, T = 25 °C
D
j
Zero gate voltage drain current, V =V
I
I
µA
DS
DSS
V
V
= 0 V, T = 25 °C
-
-
0.5
-
1
GS
GS
j
= 0 V, T = 150 °C
tbd
j
Gate-source leakage current
= 20 V, V = 0 V
-
-
100 nA
GSS
V
GS
DS
Drain-Source on-state resistance
R
-
tbd
6
Ω
DS(on)
V
= 10 V, I = 0.2 A
D
GS
1
current limited by T
jmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
1999-10-11
SPN01N50M2
Target data sheet
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25 °C, unless otherwise specified
min.
typ.
tbd
tbd
tbd
tbd
tbd
max.
j
Characteristics
Transconductance
g
-
-
-
-
-
-
-
-
-
-
S
fs
V
≥2*I *R
, I = 0.2 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
pF
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
C
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
C
rss
V
GS
DS
Turn-on delay time
= 350 V, V = 10 V, I = 0.33 A,
t
ns
d(on)
V
DD
GS
D
R = 100 Ω
G
Rise time
t
-
-
-
tbd
tbd
tbd
-
-
-
r
V
= 350 V, V = 10 V, I = 0.33 A,
GS D
DD
R = 100 Ω
G
Turn-off delay time
= 350 V, V = 10 V, I = 0.33 A,
t
d(off)
V
DD
GS
D
R = 100 Ω
G
Fall time
t
f
V
= 350 V, V = 10 V, I = 0.33 A,
GS D
DD
R = 100 Ω
G
3
1999-10-11
SPN01N50M2
Target data sheet
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25 °C, unless otherwise specified
min.
typ.
tbd
tbd
tbd
max.
j
Gate Charge Characteristics
Gate to source charge
Q
Q
Q
-
-
-
-
-
-
nC
gs
gd
g
V
= 350 V, I = 0.33 A
D
DD
Gate to drain charge
= 350 V, I = 0.33 A
V
DD
D
Total gate charge
= 350 V, I = 0.33 A, V = 0 to 10 V
V
DD
D
GS
Reverse Diode
Inverse diode continuous forward current
I
-
-
-
-
-
-
0.33
0.7
1.2
-
A
S
T = 25 °C
C
Inverse diode direct current,pulsed
I
-
SM
T = 25 °C
C
Inverse diode forward voltage
V
tbd
tbd
tbd
V
SD
V
= 0 V, I = 0.33 A
F
GS
Reverse recovery time
V = 100 V, I =I , di /dt = 100 A/µs
t
ns
µC
rr
R
F
S
F
Reverse recovery charge
V = 100 V, I =l , di /dt = 100 A/µs
Q
-
rr
R
F S
F
4
1999-10-11
SPN01N50M2
Target data sheet
±0.1
1.6
±0.2
6.5
A
B
0.1 max
±0.1
3
4
+0.2
acc. to
DIN 6784
1
2
3
0.28 ±0.04
2.3
±0.1
0.7
4.6
M
M
0.25
A
0.25
B
GPS05560
5
1999-10-11
SPN01N50M2
Target data sheet
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
6
1999-10-11
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