HA-2541/883 [INTERSIL]

Wideband, Fast Settling, Unity Gain Stable, Operational Amplifier; 宽带,快速建立,单位增益稳定运算放大器
HA-2541/883
型号: HA-2541/883
厂家: Intersil    Intersil
描述:

Wideband, Fast Settling, Unity Gain Stable, Operational Amplifier
宽带,快速建立,单位增益稳定运算放大器

运算放大器
文件: 总5页 (文件大小:42K)
中文:  中文翻译
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HA-2541/883  
Wideband, Fast Settling,  
Unity Gain Stable, Operational Amplifier  
July 1994  
Features  
Description  
• This Circuit is Processed in Accordance to MIL-STD- The HA-2541/883 is the first unity gain stable monolithic  
883 and is Fully Conformant Under the Provisions of operational amplifier to achieve 40MHz unity gain band-  
Paragraph 1.2.1.  
width. A major addition to the Intersil series of high speed,  
wideband op amps, the HA-2541/883 is designed for video  
and pulse applications requiring stable amplifier response at  
low closed loop gains.  
• Unity Gain Bandwidth . . . . . . . . . . . . . . . . 40MHz (Min)  
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . 200V/µs (Min)  
250V/µs (Typ)  
The uniqueness of the HA-2541/883 is that its slew rate and  
bandwidth characteristics are specified at unity gain. Histori-  
cally, high slew rate, wide bandwidth and unity gain stability  
have been incompatible features for a monolithic operational  
amplifier. But features such as 250V/µs slew rate and  
40MHz unity gain bandwidth clearly show that this is not the  
case for the HA-2541/883. These features, along with 90ns  
settling time to 0.1%, make this product an excellent choice  
for high speed data acquisition systems.  
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . . 2mV (Max)  
• Fast Settling Time (0.1%) . . . . . . . . . . . . . . . 90ns (Typ)  
• Power Bandwidth. . . . . . . . . . . . . . . . . . . . . 3MHz (Min)  
4MHz (Typ)  
• Output Voltage Swing . . . . . . . . . . . . . . . . . . ±10V (Min)  
• Unity Gain Stability  
• Monolithic Bipolar Dielectric Isolation Construction  
Ordering Information  
Applications  
PART  
NUMBER  
TEMPERATURE  
RANGE  
PACKAGE  
12 Pin Can  
• Pulse and Video Amplifiers  
• Wideband Amplifiers  
o
o
HA2-2541/883  
-55 C to +125 C  
• High Speed Sample and Hold Circuits  
• Fast, Precise D/A Converters  
• High Speed A/D Input Buffer  
Pinout  
HA-2541/883  
(METAL CAN)  
TOP VIEW  
V+  
12  
OUTPUT  
NC  
3
11  
1
5
V-  
NC  
BAL  
10  
2
-
+
9
NC  
8
4
BAL  
NC  
7
6
NC  
-IN  
+IN  
CASE TIED TO V-  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 511026-883  
File Number 3698  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
3-28  
Specifications HA-2541/883  
Absolute Maximum Ratings  
Thermal Information  
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V Thermal Resistance  
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Metal Can Package . . . . . . . . . . . . . . . . .  
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V- Package Power Dissipation Limit at +75 C for T +175 C  
θ
θ
JC  
34 C/W  
JA  
o
o
65 C/W  
o
o
J
Peak Output Current (< 10% Duty Cycle) . . . . . . . . . . . . . . . .50mA  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W  
o
o
Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
Package Power Dissipation Derating Factor Above +75 C  
J
o
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C  
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V  
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/ C  
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Operating Conditions  
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C  
V
1/2 (V+ - V-)  
INCM  
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V  
R 1kΩ  
L
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
= ±15V, R = 100, R = 100k, V = 0V, Unless Otherwise Specified.  
Device Tested at: V  
SUPPLY  
SOURCE  
LOAD  
OUT  
LIMITS  
MAX  
GROUP A  
SUBGROUPS  
PARAMETERS  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MIN  
-2  
UNITS  
mV  
o
Input Offset Voltage  
V
V
V
= 0V  
1
+25 C  
2
6
IO  
CM  
o
o
2, 3  
1
+125 C, -55 C  
-6  
mV  
o
Input Bias Current  
+I  
= 0V,  
+25 C  
-35  
-50  
35  
50  
µA  
B
CM  
+R = 1.1k,  
S
o
o
2, 3  
+125 C, -55 C  
µA  
-R = 100Ω  
S
o
-I  
V
= 0V,  
1
+25 C  
-35  
-50  
35  
50  
µA  
µA  
B
CM  
+R = 100,  
-R = 1.1kΩ  
S
o
o
2, 3  
+125 C, -55 C  
S
o
Input Offset Current  
I
V
= 0V,  
CM  
1
+25 C  
-7  
-9  
7
9
µA  
µA  
IO  
+R = 1.1k,  
-R = 1.1kΩ  
S
o
o
2, 3  
+125 C, -55 C  
S
o
Common Mode  
Range  
+CMR  
-CMR  
V+ = 5V, V- = -25V  
V+ = 25V, V- = -5V  
1
2, 3  
1
+25 C  
10  
10  
-
-
V
V
o
o
+125 C, -55 C  
-
o
+25 C  
-10  
V
o
o
2, 3  
4
+125 C, -55 C  
-
-10  
V
o
Large Signal Voltage  
Gain  
+A  
V
= 0V and +10V,  
OUT  
+25 C  
10  
5
-
-
-
-
-
-
kV/V  
kV/V  
kV/V  
kV/V  
dB  
VOL  
R = 1kΩ  
L
o
o
5, 6  
4
+125 C, -55 C  
o
-A  
V
= 0V and -10V,  
OUT  
+25 C  
10  
5
VOL  
R = 1kΩ  
L
o
o
5, 6  
1
+125 C, -55 C  
o
Common Mode  
Rejection Ratio  
+CMRR  
V  
= +10V,  
+25 C  
70  
70  
CM  
V+ = +5V, V- = -25V,  
o
o
2, 3  
+125 C, -55 C  
dB  
V
= -10V  
OUT  
o
-CMRR  
V  
= -10V,  
1
+25 C  
70  
70  
-
-
dB  
dB  
CM  
V+ = +25V, V- = -5V,  
= +10V  
o
o
2, 3  
+125 C, -55 C  
V
OUT  
o
Output Voltage  
Swing  
+V  
R = 1kΩ  
1
+25 C  
10  
10  
-
-
V
V
V
V
OUT  
OUT  
L
o
o
2, 3  
1
+125 C, -55 C  
-
o
-V  
R = 1kΩ  
+25 C  
-10  
-10  
L
o
o
2, 3  
+125 C, -55 C  
-
Spec Number 511026-883  
3-29  
Specifications HA-2541/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: V  
= ±15V, R  
= 100, R  
= 100k, V  
= 0V, Unless Otherwise Specified.  
SUPPLY  
SOURCE  
LOAD  
OUT  
LIMITS  
MAX  
GROUP A  
SUBGROUPS  
PARAMETERS  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MIN  
10  
10  
-
UNITS  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
dB  
o
Output Current  
+I  
V
V
V
V
= -10V  
1
1, 3  
1
+25 C  
-
-
OUT  
OUT  
OUT  
OUT  
OUT  
o
o
+125 C, -55 C  
o
-I  
= +10V  
+25 C  
-10  
-10  
39  
39  
-
OUT  
o
o
1, 3  
1
+125 C, -55 C  
-
o
Quiescent Power  
Supply Current  
+I  
= 0V, I  
= 0V, I  
= 0mA  
= 0mA  
+25 C  
-
CC  
OUT  
o
o
2, 3  
1
+125 C, -55 C  
-
o
-I  
+25 C  
-39  
-39  
70  
70  
CC  
OUT  
o
o
2, 3  
1
+125 C, -55 C  
-
o
Power Supply  
Rejection Ratio  
+PSRR  
-PSRR  
V  
= 10V,  
+25 C  
-
SUP  
V+ = +5V, V- = -15V,  
V+ = +15V, V- = -15V  
o
o
2, 3  
+125 C, -55 C  
-
dB  
o
V  
= 10V,  
1
+25 C  
70  
70  
-
-
dB  
dB  
SUP  
V+ = +15V, V- = -5V,  
V+ = +15V, V- = -15V  
o
o
2, 3  
+125 C, -55 C  
o
Offset Voltage  
Adjustment  
+V Adj  
Note 1  
Note 1  
1
1
+25 C  
V
-1  
-
-
mV  
mV  
IO  
IO  
o
-V Adj  
+25 C  
V +1  
IO  
IO  
NOTE:  
1. Offset adjustment range is [V (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment  
IO  
through 0V.  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Table 2 Intentionally Left Blank. See A.C. Specifications in Table 3  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Characterized at: V  
= ±15V, R  
= 1k, C  
= 10pF, A = 1V/V, Unless Otherwise Specified.  
SUPPLY  
LOAD  
LOAD V  
LIMITS  
PARAMETERS  
SYMBOL  
CONDITIONS  
= 0V  
CM  
NOTES  
TEMPERATURE  
MIN  
MAX  
UNITS  
kΩ  
o
Differential Input Resistance  
Unity Gain Bandwidth  
Slew Rate  
R
V
V
V
V
V
1
1
+25 C  
40  
40  
200  
200  
3
-
-
-
-
-
-
IN  
o
UGBW  
+SR  
= 90mV  
+25 C  
MHz  
V/µs  
V/µs  
MHz  
V/V  
O
o
= -3V to +3V  
= +3V to -3V  
1
+25 C  
OUT  
OUT  
PEAK  
o
-SR  
1
+25 C  
o
Full Power Bandwidth  
FPBW  
CLSG  
= 10V  
1, 2  
1
+25 C  
o
o
Minimum Closed Loop  
Stable Gain  
R = 1k, C = 10pF  
-55 C to +125 C  
1
L
L
o
Rise and Fall Time  
T
V
V
= 0V to +200mV  
= 0V to -200mV  
1, 4  
1, 4  
+25 C  
-
-
20  
20  
ns  
ns  
R
OUT  
OUT  
o
T
+25 C  
F
Spec Number 511026-883  
3-30  
Specifications HA-2541/883  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Characterized at: V  
= ±15V, R  
= 1k, C  
= 10pF, A = 1V/V, Unless Otherwise Specified.  
SUPPLY  
LOAD  
LOAD V  
LIMITS  
MIN  
PARAMETERS  
SYMBOL  
CONDITIONS  
NOTES  
TEMPERATURE  
MAX  
50  
UNITS  
o
Overshoot  
+OS  
-OS  
V
V
= 0V to +200mV  
= 0V to -200mV  
1
1
+25 C  
-
-
-
-
%
%
OUT  
OUT  
o
+25 C  
50  
o
Output Resistance  
R
Open Loop  
= 0V, I  
1
+25 C  
25  
OUT  
o
o
Quiescent Power  
Consumption  
PC  
V
= 0mA  
OUT  
1, 3  
-55 C to +125 C  
1.17  
W
OUT  
NOTES:  
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-  
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization  
based upon data from multiple production runs which reflect lot to lot and within lot variation.  
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV  
).  
PEAK  
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)  
4. Measured between 10% and 90% points.  
TABLE 4. ELECTRICAL TEST REQUIREMENTS  
MIL-STD-883 TEST REQUIREMENTS  
Interim Electrical Parameters (Pre Burn-In)  
Final Electrical Test Parameters  
Group A Test Requirements  
SUBGROUPS (SEE TABLE 1)  
1
1 (Note 1), 2, 3, 4, 5, 6  
1, 2, 3, 4, 5, 6  
1
Groups C and D Endpoints  
NOTE:  
1. PDA applies to Subgroup 1 only.  
Spec Number 511026-883  
3-31  
HA-2541/883  
Die Characteristics  
DIE DIMENSIONS:  
80 x 90 x 19 mils ± 1 mils  
2020 x 2280 x 483µm ± 25.4µm  
METALLIZATION:  
Type: Al, 1% Cu  
Thickness: 16kÅ ± 2kÅ  
GLASSIVATION:  
Type: Nitride(Si3N4) over Silox (SiO2, 5% Phos.)  
Silox Thickness: 12kÅ ± 2kÅ  
Nitride Thickness: 3.5kÅ ± 1.5kÅ  
WORST CASE CURRENT DENSITY:  
5.3 x 104 A/cm2  
SUBSTRATE POTENTIAL (Powered Up): V-  
TRANSISTOR COUNT: 41  
PROCESS: Bipolar Dielectric Isolation  
Metallization Mask Layout  
HA-2541/883  
-IN  
+IN  
BAL  
V-  
NC  
BAL  
OUTPUT  
V+  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Spec Number 511026-883  
3-32  

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