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HA-2544/883 [INTERSIL]

Video Operational Amplifier; 视频运算放大器器
HA-2544/883
型号： HA-2544/883
厂家： Intersil    Intersil
描述：

Video Operational Amplifier
视频运算放大器器

运算放大器
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中文：  中文翻译
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HA-2544/883  
Video Operational Amplifier  
July 1994  
Features  
Description  
• This Circuit is Processed in Accordance to MIL-STD- The HA-2544/883 is a fast, unity gain stable, monolithic op amp  
883 and is Fully Conformant Under the Provisions of designed to meet the needs required for accurate reproduction  
Paragraph 1.2.1.  
of video or high speed signals. It offers high voltage gain  
(3.5kV/V min, 6kV/V typ), wide unity gain bandwidth of 45MHz  
minimum and phase margin of 65 degrees (open loop). Built  
from high quality Dielectric Isolation, the HA-2544/883 is  
another addition to the Intersil series of high speed, wideband  
op amps, and offers true video performance combined with the  
versatility of an op amp.  
• Wide Unity Gain Bandwidth . . . . . . . . . . . 45MHz (Min)  
• High Slew Rate. . . . . . . . . . . . . . . . . . . . . 100V/µs (Min)  
• Low Supply Current. . . . . . . . . . . . . . . . . . . 12mA (Max)  
• Differential Gain Error . . . . . . . . . . . . . . . . 0.04dB (Max)  
• Differential Phase Error. . . . . . . . . . . . . 0.11 Deg. (Max)  
• Gain Flatness at 3.58MHz or 4.43MHz . . . 0.15dB (Max)  
• Fast Settling Time (10V to 0.1%). . . . . . . . . 120ns (Typ)  
The primary features of the HA-2544/883, include wide band-  
width, 150V/µs (typ) slew rate, < 0.04dB differential gain error,  
< 0.11 degrees differential phase error and gain flatness of  
just 0.15dB at 3.58MHz and 4.43MHz, therefore proving to be  
sufficient for video amplification. High performance and low  
power requirements are met with a supply current of only  
10mA typically and 12mA over the full temperature range.  
Applications  
• Video Systems  
Uses of the HA-2544/883 range from video test equipment  
guidance systems, radar displays and other precise imaging  
systems where stringent gain and phase requirements have  
previously been met with costly hybrids and discrete circuitry.  
The HA-2544/883 will also be used in non-video systems  
requiring high speed signal conditioning such as data acquisi-  
tion systems, medical electronics, specialized instrumentation  
and communication systems.  
• Video Test Equipment  
• Radar Displays  
• Imaging Systems  
• Pulse Amplifiers  
• Signal Conditioning Circuits  
• Data Acquisition Systems  
Ordering Information  
PART  
NUMBER  
TEMPERATURE  
RANGE  
PACKAGE  
8 Pin Can  
o
o
HA2-2544/883  
HA4-2544/883  
HA7-2544/883  
-55 C to +125 C  
o
o
-55 C to +125 C  
20 Lead Ceramic LCC  
8 Lead CerDIP  
o
o
-55 C to +125 C  
Pinouts  
HA-2544/883  
(CERDIP)  
TOP VIEW  
HA-2544/883  
(CLCC)  
TOP VIEW  
HA-2544/883  
(METAL CAN)  
TOP VIEW  
NC  
8
1
2
3
4
8
7
6
5
BAL  
-IN  
NC  
3
2
1
20 19  
1
3
7
BAL  
V+  
6
V+  
18  
17  
16  
15  
14  
4
5
6
7
8
NC  
V+  
NC  
-IN  
-
+
+IN  
V-  
OUT  
BAL  
-
+
2
-IN  
OUT  
-
NC  
OUT  
NC  
NC  
+IN  
NC  
+
5
BAL  
+IN  
4
9
10 11 12 13  
V -  
CASE TIED TO V-  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 511028-883  
File Number 3699  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
3-161  
Specifications HA-2544/883  
Absolute Maximum Ratings  
Thermal Information  
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 35V Thermal Resistance  
θ
θ
JA  
JC  
o
o
Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 6V  
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-  
CerDIP Package . . . . . . . . . . . . . . . . . . . 115 C/W  
Ceramic LCC Package . . . . . . . . . . . . . .  
28 C/W  
o
o
65 C/W  
15 C/W  
o
o
Peak Output Current (< 10% Duty Cycle) . . . . . . . . . . . . . . . .40mA  
Metal Can Package . . . . . . . . . . . . . . . . . 155 C/W 67 C/W  
Package Power Dissipation Limit at +75 C for T ≤ +175 C  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW  
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW  
o
o
o
Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
J
J
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C  
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V  
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C  
o
o
Package Power Dissipation Derating Factor Above +75 C  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/ C  
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/ C  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/ C  
o
o
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Operating Conditions  
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C  
V
≤ 1/2 (V+ - V-)  
INCM  
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V  
R ≥ 2kΩ  
L
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Tested at: V  
= ±15V, R  
= 10Ω, R  
= 500kΩ, C  
≤ 10pF, V = 0V, Unless Otherwise Specified.  
OUT  
SUPPLY  
SOURCE  
LOAD  
LOAD  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
SUBGROUPS  
TEMPERATURE  
MIN  
-15  
-20  
-15  
-20  
MAX  
15  
UNITS  
mV  
o
Input Offset Voltage  
V
V
V
= 0V  
1
+25 C  
IO  
CM  
o
o
2, 3  
1
+125 C, -55 C  
20  
mV  
o
Input Bias Current  
+I  
= 0V,  
+25 C  
15  
µA  
B
CM  
+R = 1kΩ,  
S
o
o
2, 3  
+125 C, -55 C  
20  
µA  
-R = 10Ω  
S
o
-I  
V
= 0V,  
1
+25 C  
-15  
-20  
15  
20  
µA  
µA  
B
CM  
+R = 10Ω,  
-R = 1kΩ  
S
o
o
2, 3  
+125 C, -55 C  
S
o
Input Offset Current  
I
V
= 0V,  
CM  
1
+25 C  
-2  
-3  
2
3
µA  
µA  
IO  
+R = 1kΩ,  
-R = 1kΩ  
S
o
o
2, 3  
+125 C, -55 C  
S
o
Common Mode  
Range  
+CMR  
-CMR  
V+ = 5V, V- = -25V  
V+ = 25V, V- = -5V  
1
2, 3  
1
+25 C  
10  
10  
-
-
V
V
o
o
+125 C, -55 C  
-
o
+25 C  
-10  
V
o
o
2, 3  
4
+125 C, -55 C  
-
-10  
V
o
Large Signal Voltage  
Gain  
+A  
V
= 0V and +8V,  
OUT  
+25 C  
3.5  
2.5  
3.5  
2.5  
75  
75  
-
-
-
-
-
-
kV/V  
kV/V  
kV/V  
kV/V  
dB  
VOL  
R = 1kΩ  
L
o
o
5, 6  
4
+125 C, -55 C  
o
-A  
V
= 0V and -8V,  
OUT  
+25 C  
VOL  
R = 1kΩ  
L
o
o
5, 6  
1
+125 C, -55 C  
o
Common Mode  
Rejection Ratio  
+CMRR  
∆V  
= +10V,  
+25 C  
CM  
V+ = +5V, V- = -25V,  
o
o
2, 3  
+125 C, -55 C  
dB  
V
= -10V  
OUT  
o
-CMRR  
∆V  
= -10V,  
1
+25 C  
75  
75  
-
-
dB  
dB  
CM  
V+ = +25V, V- = -5V,  
= +10V  
o
o
2, 3  
+125 C, -55 C  
V
OUT  
o
Output Voltage  
Swing  
+V  
R = 1kΩ  
1
+25 C  
10  
10  
-
-
V
V
V
V
OUT  
L
o
o
2, 3  
1
+125 C, -55 C  
-
o
-V  
R = 1kΩ  
+25 C  
-10  
-10  
OUT  
L
o
o
2, 3  
+125 C, -55 C  
-
Spec Number 511028-883  
3-162  
Specifications HA-2544/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: V  
= ±15V, R  
= 10Ω, R  
= 500kΩ, C  
≤ 10pF, V = 0V, Unless Otherwise Specified.  
OUT  
SUPPLY  
SOURCE  
LOAD  
LOAD  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
SUBGROUPS  
TEMPERATURE  
MIN  
25  
-
MAX  
UNITS  
mA  
mA  
mA  
mA  
mA  
mA  
dB  
o
Output Current  
+I  
V
V
V
= -9V  
= +9V  
= 0V, I  
1
1
+25 C  
-
-25  
12  
12  
-
OUT  
OUT  
OUT  
OUT  
OUT  
o
-I  
+25 C  
o
Quiescent Power  
Supply Current  
+I  
= 0mA  
= 0mA  
1
+25 C  
-
CC  
OUT  
o
o
2, 3  
1
+125 C, -55 C  
-
o
-I  
V
= 0V, I  
+25 C  
-12  
-12  
70  
70  
CC  
OUT  
OUT  
o
o
2, 3  
1
+125 C, -55 C  
-
o
Power Supply  
Rejection Ratio  
+PSRR  
-PSRR  
∆V  
= 10V,  
+25 C  
-
SUP  
V+ = +10V, V- = -15V,  
V+ = +20V, V- = -15V  
o
o
2, 3  
+125 C, -55 C  
-
dB  
o
∆V  
= 10V,  
1
+25 C  
70  
70  
-
-
dB  
dB  
SUP  
V+ = +15V, V- = -10V,  
V+ = +15V, V- = -20V  
o
o
2, 3  
+125 C, -55 C  
o
Offset Voltage  
Adjustment  
+V Adj  
Note 1  
Note 1  
1
1
+25 C  
V
-1  
-
-
mV  
mV  
IO  
IO  
o
-V Adj  
+25 C  
V +1  
IO  
IO  
NOTE:  
1. Offset adjustment range is [V (Measured) ±1mV] minimum referred to output. This test is for functionality only to assure adjustment  
IO  
through 0V.  
2. To achieve optimum AC performance, the input stage was designed without protective diode clamps. Exceeding the maximum differential  
input voltage results in reverse breakdown to the base-emitter junction of the input transistors and probable degradation of the input  
parameters especially V , I and Noise.  
OS OS  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Tested at: V  
= ±15V, R  
= 100Ω, R  
= 1kΩ, C  
= 10pF, V = 1V/V, Unless Otherwise Specified.  
OUT  
SUPPLY  
SOURCE  
LOAD  
LOAD  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
+SR  
CONDITIONS  
SUBGROUPS  
TEMPERATURE  
MIN  
100  
100  
MAX  
UNITS  
V/µs  
o
Slew Rate  
V
V
= -3V to +3V  
= +3V to -3V  
7
7
+25 C  
-
-
OUT  
OUT  
o
-SR  
+25 C  
V/µs  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
= ±15V, R = 1kΩ, C = 10pF, A = 1V/V, Unless Otherwise Specified.  
Device Characterized at: V  
SUPPLY  
LOAD  
LOAD  
V
LIMITS  
PARAMETERS  
SYMBOL  
dA  
CONDITIONS  
= 50Ω, R = 1kΩ,  
= 3.58MHz and  
4.43MHz  
NOTES  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
Differential Gain  
R
1, 5, 6, 8  
+25 C  
-
0.04  
0.11  
dB  
V
S
L
f
O
o
Differential Phase  
d
R
= 50Ω, R = 1kΩ,  
1, 6, 8  
+25 C  
-
Degrees  
S
L
f
= 3.58MHz and  
O
4.43MHz  
o
Unity Gain Bandwidth  
Gain Flatness  
UGBW  
V
= 200mV  
,
,
,
1
+25 C  
45  
-
MHz  
dB  
O
RMS  
RMS  
RMS  
f at -3dB  
o
∆A  
V
= 200mV  
= 5MHz  
1, 6  
1, 6  
+25 C  
-0.15  
-0.35  
0.15  
0.35  
V
O
f
O
o
V
= 200mV  
+25 C  
dB  
O
f
= 10MHz  
O
Spec Number 511028-883  
3-163  
Specifications HA-2544/883  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Characterized at: V  
= ±15V, R  
= 1kΩ, C  
= 10pF, A = 1V/V, Unless Otherwise Specified.  
SUPPLY  
LOAD  
LOAD V  
LIMITS  
PARAMETERS  
SYMBOL  
CONDITIONS  
NOTES  
1, 2  
1, 2  
1
TEMPERATURE  
MIN  
MAX  
UNITS  
MHz  
MHz  
V/V  
o
Full Power Bandwidth  
FPBW  
V
V
= 1V  
= 5V  
+25 C  
15.9  
3.2  
1
-
-
-
PEAK  
PEAK  
o
+25 C  
o
o
Minimum Closed Loop  
Stable Gain  
CLSG  
R = 1kΩ, C ≤ 1pF  
-55 C to +125 C  
L
L
o
Rise and Fall Time  
T
V
V
V
V
= 0V to +200mV  
= 0V to -200mV  
= 0V to +200mV  
= 0V to -200mV  
1, 4  
1, 4  
1
+25 C  
-
-
-
-
-
-
-
15  
15  
ns  
ns  
%
R
OUT  
OUT  
OUT  
OUT  
o
T
+25 C  
F
o
Overshoot  
+OS  
-OS  
+25 C  
20  
o
1
+25 C  
20  
%
o
Settling Time  
T
Open Loop  
Open Loop  
1
+25 C  
150  
40  
%
S
o
Output Resistance  
R
1
+25 C  
Ω
OUT  
o
o
Quiescent Power  
Consumption  
PC  
V
= 0V, I  
= 0mA  
1, 3  
-55 C to +125 C  
360  
mW  
OUT  
OUT  
NOTES:  
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-  
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization  
based upon data from multiple production runs which reflect lot to lot and within lot variation.  
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV  
).  
PEAK  
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)  
4. Measured between 10% and 90% points.  
A
(dB)  
D
5. A (%) =  
× 100  
-------------------------  
D
20  
10  
-1  
6. The video parameter specifications will degrade as the output load resistance decreases.  
7. C-L Gain and C-L Delay were less than the resolution of the test equipment used which is 0.1dB and 7ns, respectively.  
8. Test signal used is 200mV  
is suggested.  
at each frequency on a 0 and 1 volt offset. For adequate test repeatability, a minimum warm-up of 2 minutes  
RMS  
TABLE 4. ELECTRICAL TEST REQUIREMENTS  
MIL-STD-883 TEST REQUIREMENTS  
SUBGROUPS (SEE TABLES 1 AND 2)  
Interim Electrical Parameters (Pre Burn-In)  
Final Electrical Test Parameters  
Group A Test Requirements  
1
1 (Note 1), 2, 3, 4, 5, 6, 7  
1, 2, 3, 4, 5, 6, 7  
1
Groups C and D Endpoints  
NOTE:  
1. PDA applies to Subgroup 1 only.  
Spec Number 511028-883  
3-164  
HA-2544/883  
Die Characteristics  
DIE DIMENSIONS:  
80 x 64 x 19 mils ± 1 mils  
2030 x 1630 x 483µm ± 25.4µm  
METALLIZATION:  
Type: Al, 1% Cu  
Thickness: 16kÅ ± 2kÅ  
GLASSIVATION:  
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)  
Silox Thickness: 12kÅ ± 2kÅ  
Nitride Thickness: 3.5kÅ ± 1.5kÅ  
WORST CASE CURRENT DENSITY:  
7.0 x 104 A/cm2  
SUBSTRATE POTENTIAL (Powered Up): V-  
TRANSISTOR COUNT: 44  
PROCESS: Bipolar Dielectric Isolation  
Metallization Mask Layout  
HA-2544/883  
BAL  
V+  
-IN  
OUT  
BAL  
+IN  
V-  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Spec Number 511028-883  
3-165  

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