HA-5177883 [INTERSIL]

Ultra Low Offset Voltage Operational Amplifier; 超低失调电压运算放大器器
HA-5177883
型号: HA-5177883
厂家: Intersil    Intersil
描述:

Ultra Low Offset Voltage Operational Amplifier
超低失调电压运算放大器器

运算放大器
文件: 总5页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HA-5177/883  
Ultra Low Offset Voltage Operational Amplifier  
July 1994  
Features  
Description  
• This Circuit is Processed in Accordance to MIL-STD- The HA-5177/883 is a monolithic, all bipolar, precision oper-  
883 and is Fully Conformant Under the Provisions of ational amplifier, utilizing Intersil Dielectric Isolation and  
Paragraph 1.2.1.  
advance processing techniques. This design features a  
combination of precision input characteristics, wide gain  
bandwidth (2MHz) and high speed (0.5V/µs min) and is an  
improved version of the HA-5135/883.  
• Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .60µV (Max)  
10µV (Typ)  
• Low Offset Voltage Drift . . . . . . . . . . . . 0.6µV/oC (Max)  
0.1µV/oC (Typ)  
The HA-5177/883 uses advanced matching techniques and  
laser trimming to produce low offset voltage (10µV typ, 60µV  
max) and low offset voltage drift (0.1µV/oC typ, 0.6µV/oC  
max). This design also features low voltage noise (9nV/Hz  
typ), Low current noise (0.32pA/Hz typ), nanoamp input  
currents, and 126dB minimum gain.  
• High Voltage Gain . . . . . . . . . . . . . . . . . . . .126dB (Min)  
150dB (Typ)  
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)  
140dB (Typ)  
These outstanding features along with high CMRR (140dB  
typ, 110dB min) and high PSRR (135dB typ, 110dB min)  
make this unity gain stable amplifier ideal for high resolution  
data acquisition systems, precision integrators, and low level  
transducer amplifiers.  
• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min)  
135dB (Typ)  
• Low Noise. . . . . . . . . . . . . . . . . . . . . . . . 11nV/Hz (Max)  
9nV/Hz (Typ)  
• Low Power Consumption . . . . . . . . . . . . . 51mW (Max)  
• Wide Gain Bandwidth Product . . . . . . . . . . 2MHz (Min)  
• Unity Gain Stable  
Ordering Information  
PART  
NUMBER  
TEMPERATURE  
RANGE  
PACKAGE  
8 Pin Can  
Applications  
o
o
HA2-5177/883  
HA7-5177/883  
HA4-5177/883  
-55 C to +125 C  
• High Gain Instrumentation Amplifiers  
• Precision Control Systems  
o
o
-55 C to +125 C  
8 Lead CerDIP  
o
o
-55 C to +125 C  
20 Lead Ceramic LCC  
• Precision Integrators  
• High Resolution Data Converters  
• Precision Threshold Detectors  
• Low Level Transducer Amplifiers  
Pinouts  
HA-5177/883  
(CERDIP)  
TOP VIEW  
HA-5177/883  
(CLCC)  
TOP VIEW  
HA-5177/883  
(METAL CAN)  
TOP VIEW  
BAL1  
8
BAL 2  
IN-  
1
2
3
4
8
7
6
5
BAL1  
V+  
1
7
5
3
2
1 20 19  
BAL 2  
V+  
6
-
+
18  
17  
16  
15  
14  
NC  
V+  
4
5
6
7
8
NC  
-IN  
-
+
IN+  
V-  
OUT  
NC  
2
IN -  
OUT  
-
NC  
OUT  
NC  
NC  
+IN  
NC  
+
3
NC  
IN+  
4
V -  
9
10 11 12 13  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
Spec Number 511041-883  
File Number 3733.1  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-159  
Specifications HA-5177/883  
Absolute Maximum Ratings  
Thermal Information  
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V Thermal Resistance  
θ
θ
JA  
JC  
o
o
Differential Input Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7V  
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to V-  
Input Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA  
CerDIP Package . . . . . . . . . . . . . . . . . . . 115 C/W  
Ceramic LCC Package . . . . . . . . . . . . . .  
Metal Can Package . . . . . . . . . . . . . . . . . 155 C/W 67 C/W  
28 C/W  
o
o
65 C/W  
15 C/W  
o
o
o
o
Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection Package Power Dissipation Limit at +75 C for T +175 C  
J
o
Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW  
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW  
J
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C  
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V  
o
o
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C  
Package Power Dissipation Derating Factor Above +75 C  
o
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/ C  
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/ C  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/ C  
o
o
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Operating Conditions  
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C  
V
1/2 (V+ - V-)  
INCM  
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V  
R 600Ω  
L
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
= ±15V, R = 50Ω, R = 100k, V = 0V, Unless Otherwise Specified.  
Device Tested at: V  
SUPPLY  
SOURCE  
LOAD  
OUT  
LIMITS  
MAX  
GROUP A  
SUBGROUPS  
PARAMETERS  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MIN  
-60  
-100  
-6  
UNITS  
µV  
o
Input Offset Voltage  
V
V
V
= 0V  
1
+25 C  
60  
100  
6
IO  
CM  
o
o
2, 3  
1
+125 C, -55 C  
µV  
o
Input Bias Current  
Input Offset Current  
I
= 0V,  
+25 C  
nA  
B
CM  
R
= 10k, 50Ω  
o
o
S
2, 3  
+125 C, -55 C  
-8  
8
nA  
+I + –I  
B
B
----------------------------  
2
o
I
V
= 0V,  
1
+25 C  
-6  
-8  
6
8
nA  
nA  
IO  
CM  
+R = 10k,  
o
o
S
2, 3  
+125 C, -55 C  
-R = 10kΩ  
S
o
Common Mode  
Range  
+CMR  
-CMR  
V+ = +3V, V- = -27V  
V+ = +27V, V- = -3V  
1
2, 3  
1
+25 C  
12  
12  
-
V
V
o
o
+125 C, -55 C  
-
o
+25 C  
-
-12  
V
o
o
2, 3  
4
+125 C, -55 C  
-
-12  
V
o
Large Signal Voltage  
Gain  
+A  
V
= 0V and +10V,  
OUT  
+25 C  
126  
120  
126  
120  
116  
110  
-
-
-
-
-
-
dB  
dB  
dB  
dB  
dB  
dB  
VOL  
R = 2kΩ  
o
o
L
5, 6  
4
+125 C, -55 C  
o
-A  
V
= 0V and -10V,  
OUT  
+25 C  
VOL  
R = 2kΩ  
o
o
L
5, 6  
1
+125 C, -55 C  
o
Common Mode  
Rejection Ratio  
+CMRR  
V  
= 10V,  
+25 C  
CM  
V+ = +5V, V- = - 25V,  
o
o
2, 3  
+125 C, -55 C  
V
= -10  
OUT  
o
-CMRR  
V  
= 10V,  
1
+25 C  
116  
110  
-
-
dB  
dB  
CM  
V+ = +25V, V- = - 5V,  
= +10  
o
o
2, 3  
+125 C, -55 C  
V
OUT  
o
Output Voltage  
Swing  
+V  
R = 2kΩ  
4
5, 6  
4
+25 C  
12  
12  
-
-
V
V
V
V
V
V
OUT1  
L
o
o
+125 C, -55 C  
-
o
-V  
R = 2kΩ  
+25 C  
-12  
-12  
-
OUT1  
L
o
o
5, 6  
4
+125 C, -55 C  
-
o
+V  
R = 600Ω  
+25 C  
10  
-
OUT2  
L
o
-V  
R = 600Ω  
4
+25 C  
-10  
OUT2  
L
Spec Number 511041-883  
3-160  
Specifications HA-5177/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: V  
= ±15V, R  
= 50Ω, R  
= 100k, V  
= 0V, Unless Otherwise Specified.  
OUT  
SUPPLY  
SOURCE  
LOAD  
LIMITS  
MAX  
GROUP A  
SUBGROUPS  
PARAMETERS  
SYMBOL  
CONDITIONS  
TEMPERATURE  
MIN  
15  
15  
-
UNITS  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
dB  
o
Output Current  
+I  
V
V
V
V
= -10V  
4
5, 6  
4
+25 C  
-
-
OUT  
OUT  
OUT  
OUT  
OUT  
o
o
+125 C, -55 C  
o
-I  
= +10V  
+25 C  
-15  
-15  
1.7  
1.7  
-
OUT  
o
o
5, 6  
1
+125 C, -55 C  
-
o
Quiescent Power  
Supply Current  
+I  
= 0V, I  
= 0V, I  
= 0mA  
= 0mA  
+25 C  
-
CC  
OUT  
o
o
2, 3  
1
+125 C, -55 C  
-
o
-I  
+25 C  
-1.7  
-1.7  
110  
110  
CC  
OUT  
o
o
2, 3  
1
+125 C, -55 C  
-
o
Power Supply  
Rejection Ratio  
+PSRR  
-PSRR  
V  
= 15V,  
+25 C  
-
SUP  
V+ = +5V, V- = - 15V,  
V+ = +20V, V- = - 15V  
o
o
2, 3  
+125 C, -55 C  
-
dB  
o
V  
= 15V,  
1
+25 C  
110  
110  
-
-
dB  
dB  
SUP  
V+ = +15V, V- = - 5V,  
V+ = +15V, V- = - 20V  
o
o
2, 3  
+125 C, -55 C  
o
Offset Voltage  
Adjustment  
+V Adj  
Note 2  
1
+25 C  
0.3  
0.3  
-
-
mV  
mV  
mV  
mV  
IO  
o
o
2, 3  
1
+125 C, -55 C  
-
o
-V Adj  
Note 2  
+25 C  
-0.3  
-0.3  
IO  
o
o
2, 3  
+125 C, -55 C  
-
NOTES:  
1. The input stage has series 500resistors along with back to back diodes. This provides large differential input voltage protection for a  
slight increase in noise voltage.  
2. This test is for functionality only to assure adjustment through 0V.  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Tested at: V  
= ±15V, R  
= 50, R  
= 2k, C  
= 50pF, A = +1V/V, Unless Otherwise Specified.  
VCL  
SUPPLY  
SOURCE  
LOAD  
LOAD  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
= -3V to +3V,  
SUBGROUPS  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
Slew Rate  
+SR  
V
V
7
7
7
7
+25 C  
0.5  
-
V/µs  
OUT  
S.R. 25V/µs  
IN  
o
-SR  
V
V
= +3V to -3V,  
+25 C  
0.5  
-
V/µs  
ns  
OUT  
S.R. 25V/µs  
IN  
o
Rise and Fall Time  
Overshoot  
t
V
= 0 to +200mV  
+25 C  
-
-
420  
420  
R
OUT  
10% T 90%  
R
o
t
V
= 0 to -200mV  
OUT  
+25 C  
ns  
F
10% T 90%  
F
o
+OS  
-OS  
V
V
= 0 to +200mV  
= 0 to -200mV  
7
7
+25 C  
-
-
40  
40  
%
%
OUT  
OUT  
o
+25 C  
Spec Number 511041-883  
3-161  
Specifications HA-5177/883  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Characterized at: V  
= ±15V, R  
= 2k, C  
= 50pF, A = +1V/V, Unless Otherwise Specified.  
SUPPLY  
LOAD  
LOAD V  
LIMITS  
PARAMETERS  
SYMBOL  
TC  
CONDITIONS  
= 0V  
CM  
NOTES  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
o
o
Average Offset Voltage  
Drift  
V
V
1
-55 C to +125 C  
-
0.6  
µV/ C  
IO  
o
o
o
Average Offset Current  
Drift  
I
TC  
Versus Temperature  
Versus Temperature  
1
-55 C to +125 C  
-
40  
pA/ C  
IO  
o
o
o
Average Bias Current Drift  
I TC  
1
1
-55 C to +125 C  
-
40  
-
pA/ C  
R
o
Differential Input  
Resistance  
R
V
= 0V  
CM  
+25 C  
20  
MΩ  
IN  
o
Low Frequency  
Peak-to-Peak Noise Voltage  
E
0.1Hz to 10Hz  
0.1Hz to 10Hz  
1
1
+25 C  
-
-
0.6  
45  
µV  
NP-P  
NP-P  
P-P  
P-P  
o
Low Frequency  
I
+25 C  
pA  
Peak-to-Peak Noise Current  
o
Input Noise Voltage  
Density  
E
R
R
R
R
R
R
= 20, f = 10Hz  
1
1
1
1
1
1
1
+25 C  
-
-
18  
13  
11  
4
nV/√Hz  
nV/√Hz  
nV/√Hz  
pA/√Hz  
pA/√Hz  
pA/√Hz  
MHz  
N
S
S
S
S
S
S
O
o
= 20, f = 100Hz  
+25 C  
O
o
= 20, f = 1kHz  
+25 C  
-
O
o
Input Noise Current  
Density  
I
= 2M, f = 10Hz  
+25 C  
-
N
O
o
= 2M, f = 100Hz  
+25 C  
-
2.3  
1
O
o
= 2M, f = 1kHz  
+25 C  
-
O
o
Gain Bandwidth Product  
Full Power Bandwidth  
GBWP  
V = 100mV,  
+25 C  
2
-
O
1Hz f 100kHz  
O
o
FPBW  
CLSG  
V
= 10V  
1, 2  
1
+25 C  
8
-
-
kHz  
V/V  
PEAK  
o
o
Minimum Closed Loop  
Stable Gain  
R = 2k, C = 50pF  
-55 C to +125 C  
+1  
L
L
o
Settling Time  
Output Resistance  
Power Consumption  
NOTES:  
t
To 0.1% for a 10V Step  
Open Loop  
1
1
+25 C  
-
-
-
15  
70  
51  
µs  
S
o
R
+25 C  
OUT  
o
o
PC  
V
= 0V, I  
= 0mA  
1, 3  
-55 C to +125 C  
mW  
OUT  
OUT  
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-  
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization  
based upon data from multiple production runs which reflect lot to lot and within lot variation.  
2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV  
).  
PEAK  
3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)  
TABLE 4. ELECTRICAL TEST REQUIREMENTS  
MIL-STD-883 TEST REQUIREMENTS  
Interim Electrical Parameters (Pre Burn-In)  
Final Electrical Test Parameters  
Group A Test Requirements  
SUBGROUPS (SEE TABLES 1 AND 2)  
1
1 (Note 1), 2, 3, 4, 5, 6, 7  
1, 2, 3, 4, 5, 6, 7  
1
Groups C and D Endpoints  
NOTE:  
1. PDA applies to Subgroup 1 only.  
Spec Number 511041-883  
3-162  
HA-5177/883  
Die Characteristics  
DIE DIMENSIONS:  
72 x 103 x 19 mils ± 1 mils  
1840 x 2620 x 483µm ± 25.4µm  
METALLIZATION:  
Type: Al, 1% Cu  
Thickness: 16kÅ ± 2kÅ  
GLASSIVATION:  
Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)  
Silox Thickness: 12kÅ ± 2kÅ  
Nitride Thickness: 3.5kÅ ± 1.5kÅ  
WORST CASE CURRENT DENSITY:  
6.0 x 104A/cm2  
SUBSTRATE POTENTIAL (Powered Up): V-  
TRANSISTOR COUNT: 71  
PROCESS: Bipolar Dielectric Isolation  
Metallization Mask Layout  
HA-5177/883  
BAL1  
V+  
OUT  
NC  
BAL2  
-IN  
+IN  
V-  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Spec Number 511041-883  
3-163  

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