HGTP20N35G3VL [INTERSIL]
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs; 20A ， 350V N沟道逻辑电平，电压钳位的IGBT
| 型号： | HGTP20N35G3VL |
| 厂家： | 
Intersil |
| 描述： | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
| 文件： | 总6页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
April 1995
Features
Packages
JEDEC TO-220AB
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175oC
COLLECTOR
GATE
EMITTER
COLLECTOR
(FLANGE)
• Ignition Energy Capable
JEDEC TO-262AA
EMITTER
Description
COLLECTOR
GATE
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in auto-
motive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which pro-
vides Self Clamped Inductive Switching (SCIS) capability in
ignition circuits. Internal diodes provide ESD protection for
the logic level gate. Both a series resistor and a shunt resis-
tor are provided in the gate circuit.
COLLECTOR
(FLANGE)
JEDEC TO-263AB
COLLECTOR
(FLANGE)
M
A
PACKAGING AVAILABILITY
GATE
PART NUMBER
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
PACKAGE
T0-220AB
T0-262AA
T0-263AB
BRAND
20N35GVL
EMITTER
20N35GVL
20N35GVL
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
COLLECTOR
The development type number for this device is TA49076.
R1
GATE
R2
EMITTER
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
HGTP20N35G3VL
HGT1S20N35G3VL
HGT1S20N35G3VLS
UNITS
Collector-Emitter Bkdn Voltage At 10mA, R = 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
375
24
20
20
±10
26
18
775
150
V
V
A
A
V
GE
CER
ECS
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
o
Collector Current Continuous At V = 5.0V, T = +25 C, Figure 7 . . . . . . . . . . . . . I
GE
C
C25
o
At V = 5.0V, T = +100 C . . . . . . . . . . . . . . . . . . . .I
GE
C
C100
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
SCIS
SCIS
o
Inductive Switching Current At L = 2.3mH, T = +25 C . . . . . . . . . . . . . . . . . . . . . I
A
A
C
o
At L = 2.3mH, T = +175 C . . . . . . . . . . . . . . . . . . . . . I
C
o
Collector to Emitter Avalanche Energy At L = 2.3mH, T = +25 C . . . . . . . . . . . . . . E
Power Dissipation Total At T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T > +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
mJ
W
C
AS
o
C
D
o
o
1.0
-40 to +175
260
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T , T
C
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Electrostatic Voltage at 100pF, 1500Ω . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
6
KV
NOTE: May be exceeded if I is limited to 10mA.
GEM
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 4006
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
3-66
Specifications HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
o
Electrical Specifications
T
= +25 C, Unless Otherwise Specified
C
LIMITS
TYP
345
PARAMETERS
SYMBOL
BV
TEST CONDITIONS
MIN
310
320
320
300
315
315
-
MAX
380
380
390
375
375
390
-
UNITS
o
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
I
V
= 10mA,
= 0V
T
T
T
T
T
T
T
= +175 C
V
V
V
V
V
V
V
CES
C
C
C
C
C
C
C
C
GE
o
= +25 C
350
o
= -40 C
355
o
BV
I
= 10mA
= 0V
= 1kΩ
= +175 C
340
CER
C
V
R
GE
o
= +25 C
345
GE
o
= -40 C
350
o
Gate-Emitter Plateau Voltage
Gate Charge
V
I
= 10A
= +25 C
3.7
GEP
C
V
= 12V
CE
o
Q
I
= 10A
= 5V
= 12V
T
T
= +25 C
-
28.7
360
-
nC
V
G(ON)
C
C
C
V
V
GE
CE
o
Collector-Emitter Clamp Bkdn. Voltage
BV
I
= 10A
= +175 C
325
395
CE(CL)
C
R
= 0Ω
G
o
Emitter-Collector Breakdown Voltage
Collector-Emitter Leakage Current
BV
I
= 10mA
T
T
T
T
T
T
T
= +25 C
20
32
-
-
V
µA
µA
V
ECS
C
C
C
C
C
C
C
C
o
I
V
V
= 250V
= 250V
= +25 C
-
5
CES
CE
CE
o
= +175 C
-
-
250
1.6
1.5
2.8
3.5
2.3
o
Collector-Emitter Saturation Voltage
V
I
= 10A
= +25 C
-
1.3
1.25
1.6
1.9
1.8
CE(SAT)
C
V
= 4.5V
GE
GE
CE
o
= +175 C
-
-
V
o
I
= 20A
= 5.0V
= +25 C
V
C
V
o
= +175 C
-
V
o
Gate-Emitter Threshold Voltage
V
I
= 1mA
= V
GE
T
= +25 C
1.3
V
GE(TH)
C
C
V
o
Gate Series Resistance
R
R
T
T
= +25 C
-
10
1.0
17
-
25
kΩ
kΩ
µA
V
1
2
C
C
o
Gate-Emitter Resistance
= +25 C
Gate-Emitter Leakage Current
Gate-Emitter Breakdown Voltage
Current Turn-Off Time-Inductive Load
I
V
= ±10V
= ±2mA
±400
±12
-
±590
±14
15
±1000
-
GES
GE
BV
I
I
GES
GES
t
+
= 10A, R = 25Ω,
30
µs
D(OFF)I
C
G
t
L = 550 H, R = 26.4Ω, V = 5V,
F(OFF)I
L GE
o
V
= 300V, T = +175 C
C
CL
o
Inductive Use Test
Thermal Resistance
I
L = 2.3mH,
T
T
= +175 C
18
26
-
-
-
-
-
-
A
A
SCIS
C
C
V
= 5V,
G
o
R
= 0Ω
= +25 C
G
o
R
1.0
C/W
θJC
3-67
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
100
80
50
40
30
7V
VGE=10V
6.5V
6.0V
5.5V
5.0V
60
40
TC = +175oC
TC = +25oC
TC = -40oC
4.5V
20
10
4.0V
3.5V
20
0
3.0V
2.5V
0
1
2
3
4
5
6
2
4
6
8
10
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
50
40
30
20
10
0
TC = +175oC
-40oC
VGE = 4.5V
40
+25oC
VGE = 5.0V
30
20
+175oC
VGE = 4.5V
VGE = 4.0V
10
0
3
0
1
2
4
5
0
1
2
3
4
VCE(SAT) , SATURATION VOLTAGE (V)
VCE(SAT) , SATURATION VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
ICE = 10A
OF SATURATION VOLTAGE
2.2
2.1
1.4
1.3
ICE = 20A
VGE = 4.0V
VGE = 4.5V
VGE = 4.0V
2.0
1.9
1.8
1.7
VGE = 4.5V
1.2
1.1
VGE = 5.0V
VGE = 5.0V
1.6
1.5
+125
TJ, JUNCTION TEMPERATURE (oC)
+175
+75
+25
-25
+25
+75
+125
-25
+175
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 5. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 6. SATURATION VOLTAGE AS A FUNCTION OF
JUNCTION TEMPERATURE
3-68
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
25
20
1.2
1.1
ICE = 1mA
VGE = 5.0V
PACKAGE LIMITED
1.0
15
10
0.9
0.8
0.7
5
0
0.6
0.5
+50
+25
+75
+125
+150
+175
+100
-25
+25
+75
+125
+175
TJ, JUNCTION TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE7. COLLECTOR-EMITTERCURRENTASAFUNCTION
OF CASE TEMPERATURE
FIGURE 8. NORMALIZED THRESHOLD VOLTAGE AS A
FUNCTION OF JUNCTION TEMPERATURE
18
105
VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550 H
104
VECS = 20V
16
103
102
ICE = 6A, RL= 50Ω
14
101
ICE =10A, RL= 30Ω
VCES = 250V
12
ICE =15A, RL= 20Ω
100
10-1
10
+175
+50
+100
TJ, JUNCTION TEMPERATURE (oC)
+175
+125
+150
+75
+100
+150
TJ, JUNCTION TEMPERATURE (oC)
+25
+75
+50
+125
+25
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
45
1200
VGE = 5V
VGE = 5V
40
35
1000
+25oC
+25oC
30
25
800
600
20
15
+175oC
+175oC
400
10
5
200
0
2
4
6
8
10
0
2
4
6
8
10
INDUCTANCE (mH)
INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
3-69
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
IG REF = 1.022mA, RL = 1.2Ω, TC = +25oC
1600
1400
1200
1000
12
10
8
6
5
FREQUENCY = 1MHz
VCE = 12V
4
3
CIES
800
600
6
4
VCE = 8V
VCE = 4V
2
1
0
COES
400
200
2
0
CRES
40
5
20
QG, GATE CHARGE (nC)
30
20
25
0
10
0
10
15
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 13. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 14. GATE CHARGE WAVEFORMS
100
0.5
350
345
340
335
ICER = 10mA
t1
0.2
PD
0.1
t2
10-1
0.05
TC = +25oC AND +175oC
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.02
0.01
10-2
SINGLE PULSE
10-5
10-3
t1, RECTANGULAR PULSE DURATION (s)
0
2000
4000
6000
8000
10000
10-1
101
RGE, GATE-TO-EMITTER RESISTANCE (V)
FIGURE 15. NORMALIZED TRANSIENT THERMAL
IMPEDANCE, JUNCTION TO CASE
FIGURE 16. BREAKDOWN VOLTAGE AS A FUNCTION OF
GATE - EMITTER RESISTANCE
Test Circuits
RL
2.3mH
VDD
L = 550µH
C
C
1/RG = 1/RGEN + 1/RGE
RG
RGEN = 25Ω
DUT
RGEN = 50Ω
+
G
DUT
VCC
G
5V
300V
-
10V
RGE = 50Ω
E
E
FIGURE 17. USE TEST CIRCUIT
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
3-70
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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Spec Number
3-71
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