HS-307RH883S [INTERSIL]
Radiation Hardened CMOS Analog Switches; 抗辐射CMOS模拟开关
| 型号： | HS-307RH883S |
| 厂家： | 
Intersil |
| 描述： | Radiation Hardened CMOS Analog Switches |
| 文件： | 总16页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HS-302RH/883S, HS-303RH/883S,
HS-306RH/883S, HS-307RH/883S,
HS-384RH/883S, HS-390RH/883S
Radiation Hardened
CMOS Analog Switches
September 1995
Features
Description
• This Circuit is Processed in Accordance to Mil-Std- The HS-3XXRH/883S family of analog switches are
883 and is Fully Conformant Under the Provisions of monolithic devices fabricated using Radiation Hardened
Paragraph 1.2.1.
CMOS technology and the Intersil dielectric isolation pro-
cess for latch-up free operation. Improved total dose hard-
ness is obtained by layout (thin oxide tabs extending to a
channel stop) and processing (hardened gate oxide). These
switches offer low-resistance switching performance for ana-
log voltages up to the supply rails. “ON” resistance is low
and stays reasonably constant over the full range of operat-
ing voltage and current. “ON” resistance also stays reason-
ably constant when exposed to radiation, being typically 30Ω
pre-rad and 35Ω post 100K RAD-Si. All devices provide
break-before-make switching.
• Radiation Hardened
- Functional Total Dose Exceeds 1 x 105 RAD Si
• Pin for Pin Compatible with Intersil HI-3XX Series
Analog Switches
• Analog Signal Range 15V
• Low Leakage
• Low RON
• No Latch Up
The 6 devices in this switch series are differentiated by type
of switch action, pinout and digital logic levels. The HS-302/
303/384/390RH/883S switches have 5V digital inputs while
the HS-306/307RH/883S switches have 15V digital inputs.
All devices are available in Ceramic Flatpack and SBDIP
packages. The HS-3XXRH/883S switches can directly
replace the HI-3XX series devices.
• Versions for 5V and 15V Digital Systems
• Low Operating Power
• Military Temperature Range -55oC to +125oC
Applications
• Sample and Hold i.e. Low Leakage Switching
• Op Amp Gain Switching i.e. Low ON Resistance
• Switched Capacitor Filters
• Low Level Switching Circuits
• Satellites
Functional Diagram
N
P
IN
D
• Nuclear Reactor Controls
• Military Environments
Ordering Information
PART NUMBER
HS1-302RH/883S
TEMPERATURE RANGE
SCREENING LEVEL
Intersil /883 Class S Equivalent
Intersil /883 Class S Equivalent
Sample
PACKAGE
o
o
-55 C to +125 C
14 Lead SBDIP
o
o
HS9-302RH/883S
-55 C to +125 C
14 Lead Ceramic Flatpack
14 Lead SBDIP
o
HS1-302RH/Sample
HS9-302RH/Sample
HS1-303RH/883S
+25 C
o
+25 C
Sample
14 Lead Ceramic Flatpack
14 Lead SBDIP
o
o
-55 C to +125 C
Intersil /883 Class S Equivalent
Intersil /883 Class S Equivalent
Sample
o
o
HS9-303RH/883S
-55 C to +125 C
14 Lead Ceramic Flatpack
14 Lead SBDIP
o
HS1-303RH/Sample
HS9-303RH/Sample
HS1-306RH/883S ( Note 1)
HS9-306RH/883S ( Note 1)
+25 C
o
+25 C
Sample
14 Lead Ceramic Flatpack
14 Lead SBDIP
o
o
-55 C to +125 C
Intersil /883 Class S Equivalent
Intersil /883 Class S Equivalent
o
o
-55 C to +125 C
14 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Spec Number 518526
File Number 3067.1
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
HS-3XXRH/883S
Ordering Information (Continued)
PART NUMBER
HS1-306RH/Sample (Note 1)
HS9-306RH/Sample (Note 1)
HS1-307RH/883S
TEMPERATURE RANGE
SCREENING LEVEL
PACKAGE
14 Lead SBDIP
o
+25 C
Sample
o
+25 C
Sample
14 Lead Ceramic Flatpack
14 Lead SBDIP
o
o
-55 C to +125 C
Intersil /883 Class S Equivalent
Intersil /883 Class S Equivalent
Sample
o
o
HS9-307RH/883S
-55 C to +125 C
14 Lead Ceramic Flatpack
14 Lead SBDIP
o
HS1-307RH/Sample
+25 C
o
HS9-307RH/Sample
+25 C
Sample
14 Lead Ceramic Flatpack
16 Lead SBDIP
o
o
HS1-384RH/883S (Note 1)
HS9-384RH/883S (Note 1)
HS1-384RH/Sample (Note 1)
HS9-384RH/Sample (Note 1)
HS1-390RH/883S
-55 C to +125 C
Intersil /883 Class S Equivalent
Intersil /883 Class S Equivalent
Sample
o
o
-55 C to +125 C
16 Lead Ceramic Flatpack
16 Lead SBDIP
o
+25 C
o
+25 C
Sample
16 Lead Ceramic Flatpack
16 Lead SBDIP
o
o
-55 C to +125 C
Intersil /883 Class S Equivalent
Intersil /883 Class S Equivalent
Sample
o
o
HS9-390RH/883S
-55 C to +125 C
16 Lead Ceramic Flatpack
16 Lead SBDIP
o
HS1-390RH/Sample
+25 C
o
HS9-390RH/Sample
+25 C
Sample
16 Lead Ceramic Flatpack
NOTE:
1. Not recommended for new design.
Pinouts (Switch States are for Logic “1” Inputs)
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16
TOP VIEW
DUAL DPST
HS-302RH/883S
HS-306RH/883S
DUAL SPDT
HS-303RH/883S
HS-307RH/883S
DUAL DPST
HS-384RH/883S
DUAL SPDT
HS-390RH/883S
1
16
15
14
13
12
11
10
9
D1
NC
D3
S3
S4
D4
NC
D2
1
16
15
14
13
12
11
10
9
S1
D1
NC
D3
S3
S4
D4
NC
D2
S1
1
2
3
4
5
6
7
14
1
2
3
4
5
6
7
14
V+
S4
D4
D2
S2
IN2
V-
V+
S4
D4
D2
S2
IN2
NC
S3
NC
S3
2
3
4
5
6
7
8
2
3
4
5
6
7
8
IN1
V-
IN1
V-
13
12
11
10
9
13
12
11
10
9
D3
D3
GND
NC
V+
GND
NC
V+
D1
D1
S1
S1
IN1
GND
IN1
GND
IN2
S2
IN2
S2
8
8
V-
SWITCH
1 - 4
SW1
SW2
SW3
SW4
SWITCH
1 - 4
SW1
SW2
SW3
SW4
LOGIC
LOGIC
LOGIC
LOGIC
0
1
OFF
ON
0
1
OFF
ON
ON
0
1
OFF
ON
0
1
OFF
ON
ON
OFF
OFF
Spec Number 518526
2
HS-3XXRH/883S
Pinouts (Switch States are for Logic “1” Inputs) (Continued)
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDIP3-F14
TOP VIEW
DUAL DPST
HS-302RH/883S
HS-306RH/883S
DUAL SPDT
HS-303RH/883S
HS-307RH/883S
1
2
3
4
5
6
7
1
2
3
4
5
6
7
14
13
12
11
10
9
14
13
12
11
10
9
V+
S4
D4
D2
S2
IN2
V-
V+
S4
D4
D2
S2
IN2
V-
NC
S3
NC
S3
D3
D3
D1
D1
S1
S1
IN1
GND
IN1
GND
8
8
LOGIC
SWITCH 1 - 4
LOGIC
SW1 AND SW2
SW3 AND SW4
0
1
OFF
ON
0
1
OFF
ON
ON
OFF
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDIP4-F16
TOP VIEW
DUAL DPST
HS-384RH/883S
DUAL SPDT
HS-390RH/883S
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
S1
S1
IN1
V-
D1
NC
D3
S3
S4
D4
NC
D2
D1
NC
D3
S3
S4
D4
NC
D2
IN1
V-
GND
NC
V+
GND
NC
V+
IN2
S2
IN2
S2
LOGIC
SWITCH 1 - 4
LOGIC
SW1 AND SW2
SW3 AND SW4
0
1
OFF
ON
0
1
OFF
ON
ON
OFF
Spec Number 518526
3
Specifications HS-3XXRH/883S
Absolute Maximum Ratings
Reliability Information
Supply Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . +44V Thermal Resistance
θ
θ
JA
JC
o
o
+VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +22V
-VSUPPLY to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-22V
Analog Input Overvoltages:
14 Lead SBDIP Package. . . . . . . . . . . . .
14 Lead Ceramic Flatpack Package . . . . 105 C/W 17 C/W
16 Lead SBDIP Package. . . . . . . . . . . . .
70 C/W
19 C/W
o
o
o
o
70 C/W
19 C/W
o
o
+VS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +VSUPPLY +1.5V
-VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY - 1.5V
Digital Input Overvoltage:
+VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+VSUPPLY +4V
-VA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-VSUPPLY -4V
Peak Current, S or D Pulsed at 1ms, 10% Duty Cycle Max . . .40mA
16 Lead Ceramic Flatpack Package . . . . 105 C/W 17 C/W
Maximum Package Power Dissipation at +125 C Ambient
14 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . 0.48W
16 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . .0.48
o
Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10mA If device power exceeds package dissipation capability, provide heat
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C
sinking or derate linearly at the following rate:
14 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . 14.3mW/ C
14 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/ C
16 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . 14.3mW/ C
o
o
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
Lead Temperature (soldering 10s) . . . . . . . . . . . . . . . . . . . . .≤ +300 C
o
o
o
o
16 Lead Ceramic Flatpack Package . . . . . . . . . . . . . . . 9.5mW/ C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
o
o
Operating Supply Voltage (± VSupply) . . . . . . . . . . . . . . . . . . . . . ±15V
Operating Temperature Range . . . . . . . . . . . . . . . .-55 C to +125 C
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
GROUP A
SUB-
GROUPS
LIMITS
MIN
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MAX
50
75
50
75
2
UNITS
Ω
o
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
2, 3
1
+25 C
-
-
o
o
-55 C to +125 C
Ω
o
-RDS
+IS(OFF)
-IS(OFF)
+ID(OFF)
-ID(OFF)
+ID(ON)
-ID(ON)
IAL
VD = -10V, IS = 10mA,
S1/S2/S3/S4
+25 C
-
Ω
o
o
2, 3
1
-55 C to +125 C
-
Ω
o
Leakage Current Into
the Source Terminal of
an “Off” Switch
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
-2
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
µA
µA
µA
µA
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
Leakage Current into
the Drain Terminal of an
“Off” Switch
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
Leakage Current from
an “On” Driver Into the
Switch (Drain & Source)
VS = VD = +14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
VS = VD = -14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-1
100
1
o
Low Level Input
Address Current
All Channels VA = 0.8V
All Channels VA = 4.0V
+25 C
o
o
2, 3
1
-55 C to +125 C
-1
1
o
High Level Input
Address Current
IAH
+25 C
-1
1
o
o
2, 3
-55 C to +125 C
-1
1
Spec Number 518526
4
Specifications HS-3XXRH/883S
TABLE 1. HS-302RH/303RH/384RH/390RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)
GROUP A
SUB-
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Positive Supply Current
I(+)
All Channels VA = 0.8V
1
2, 3
1
+25 C
-
-
10
o
o
-55 C to +125 C
100
µA
o
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25 C
-
0.5
mA
mA
µA
o
o
2, 3
1
-55 C to +125 C
-
1
-
o
Negative Supply
Current
I(-)
All Channels VA = 0.8V
+25 C
-10
-100
-10
-100
o
o
2, 3
1
-55 C to +125 C
-
µA
o
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25 C
-
µA
o
o
2, 3
-55 C to +125 C
-
µA
TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
GROUP A
SUB-
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
-
MAX
50
75
50
75
2
UNITS
Ω
o
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
2, 3
1
+25 C
o
o
-55 C to +125 C
-
Ω
o
+RDS
+IS(OFF)
-IS(OFF)
+ID(OFF)
-ID(OFF)
+ID(ON)
-ID(ON)
IAL
VD = -10V, IS = 10mA,
S1/S2/S3/S4
+25 C
-
Ω
o
o
2, 3
1
-55 C to +125 C
-
Ω
o
Leakage Current Into
the Source Terminal of
an “Off” Switch
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
-2
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
µA
µA
µA
µA
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
Leakage Current into
the Drain Terminal of an
“Off” Switch
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
Leakage Current from
an “On” Driver Into the
Switch (Drain and
Source)
VS = VD = +14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-2
100
2
o
VS = VD = -14V,
S1/S2/S3/S4
+25 C
o
o
2, 3
1
-55 C to +125 C
-100
-1
100
1
o
Low Level Input
Address Current
All Channels VA = 3.5V
All Channels VA = 11V
+25 C
o
o
1, 2
1
-55 C to +125 C
-1
1
o
High Level Input
Address Current
IAH
+25 C
-1
1
o
o
1, 2
-55 C to +125 C
-1
1
Spec Number 518526
5
Specifications HS-3XXRH/883S
TABLE 1. HS-306RH/307RH/883S DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V (Continued)
GROUP A
SUB-
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
µA
o
Positive Supply Current
I(+)
All Channels VA = 0V
1
2, 3
1
+25 C
-
-
10
o
o
-55 C to +125 C
100
µA
o
All Channels VA = 15V
All Channels VA = 0V
All Channels VA = 15V
+25 C
-
10
µA
o
o
2, 3
1
-55 C to +125 C
-
100
µA
o
Negative Supply
Current
I(-)
+25 C
-10
-100
-10
-100
-
-
-
-
µA
o
o
2, 3
1
-55 C to +125 C
µA
o
+25 C
µA
o
o
2, 3
-55 C to +125 C
µA
TABLE 2. HS-302RH/303RH/384RH/390RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V
GROUP A
SUB-
GROUPS
LIMITS
MIN
PARAMETER
SYMBOL
CONDITIONS
TEMPERATURE
MAX
150
300
300
500
250
450
UNITS
ns
o
Break-Before-Make
Time Delay (HS-303RH
& 390RH Only)
TOPEN
RL = 300Ω, VS = +3V,
VAH = 5V
9
+25 C
30
-
o
o
10, 11
9
-55 C to +125 C
ns
o
Switch Turn “On” Time
TON
RL = 300Ω, VS = +3V
RL = 300Ω, VS = +3V
+25 C
-
ns
o
o
10, 11
9
-55 C to +125 C
-
ns
o
Switch Turn “Off” Time
TOFF
+25 C
-
ns
o
o
10, 11
-55 C to +125 C
-
ns
TABLE 2. HS-306RH/307RH/883S AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V
GROUP A
SUB-
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
150
300
300
500
250
450
UNITS
ns
o
Break-Before-Make
Time Delay (HS-307RH
Only)
TOPEN
RL = 300Ω, VS = +3V
9
+25 C
30
-
o
o
10, 11
9
-55 C to +125 C
ns
o
Switch Turn “On” Time
TON
RL = 300Ω, VS = +3V
RL = 300Ω, VS = +3V
+25 C
-
ns
o
o
10, 11
9
-55 C to +125 C
-
ns
o
Switch Turn “Off” Time
TOFF
+25 C
-
ns
o
o
10, 11
-55 C to +125 C
-
ns
Spec Number 518526
6
Specifications HS-3XXRH/883S
TABLE 3. HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1)
Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0V
HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +15.0V, VAL = 0V
LIMITS
(NOTE 1)
PARAMETER
Switch Input Capacitance
Driver Input Capacitance
SYMBOL
CIS(OFF)
CC1
CONDITIONS
TEMPERATURE
MIN
MAX
28
10
10
28
-
UNITS
pF
o
Measured Source to GND
VA = 0V
+25 C
-
-
o
+25 C
pF
o
CC2
VA = 15V
+25 C
-
pF
o
Switch Output
Off Isolation
Crosstalk
COS
Measured Drain to GND
VGEN = 1Vp-p, f = 1MHz
VGEN = 1Vp-p, f = 1MHz
VS = GND, CL = 0.01µF
+25 C
-
pF
o
VISO
+25 C
40
40
-
dB
o
VCR
+25 C
-
dB
o
Charge Transfer
VCTE
+25 C
15
mV
NOTE:1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These
parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by
characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.
TABLE 4. HS-302RH/303RH/384RH/390RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS
Tested Per Mil-Std-883. Unless Otherwise Specified: HS-302RH/303RH/384RH/390RH/883S V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
LIMITS
PARAMETER
SYMBOL
+RDS
CONDITIONS
TEMPERATURE
MIN
-
MAX
60
UNITS
Ω
o
“Switch On” Resistance
VD = 10V, IS = -10mA, S1/S2/S3/S4
VD = -10V, IS = 10mA, S1/S2/S3/S4
VS = +14V, VD = -14V, S1/S2/S3/S4
VS = -14V, VD = +14V, S1/S2/S3/S4
+25 C
o
-RDS
+25 C
-
60
Ω
o
Leakage Current Into the
Source Terminal of an “Off”
Switch
+IS(OFF)
-IS(OFF)
+25 C
-100
-100
100
100
nA
o
+25 C
nA
o
Leakage Current into the Drain
Terminal of an “Off” Switch
+ID(OFF)
-ID(OFF)
-ID(ON)
-ID(ON)
VS = -14V, VD = +14V, S1/S2/S3/S4
VS = +14V, VD = -14V, S1/S2/S3/S4
VS = VD = +14V, S1/S2/S3/S4
VS = VD = -14V, S1/S2/S3/S4
+25 C
-100
-100
-100
-100
100
100
100
100
nA
nA
nA
nA
o
+25 C
o
Leakage Current from an “On”
Driver Into the Switch (Drain &
Source)
+25 C
o
+25 C
o
Positive Supply Current
I(+)
All Channels VA = 0.8V
+25 C
-
-
100
1
µA
o
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25 C
mA
o
Negative Supply Current
I(-)
All Channels VA = 0.8V
+25 C
-100
-100
-
-
µA
µA
o
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25 C
o
High Level Address Current
Low Level Address Current
IAH
IAL
All Channels High
+25 C
-1
-1
2
+1
+1
µA
µA
ns
o
All Channels Low
+25 C
o
Break-Before-Make Time
Delay (HS-303RH/883S and
HS390RH/883S Only)
TOPEN
RL = 300Ω, VS = +3V, (Note 1)
+25 C
300
o
Switch Turn-On Time
Switch Turn-Off Time
TON
RL = 300Ω, VS = +3V, (Note 2)
RL = 300Ω, VS = +3V, (Note 2)
+25 C
-
-
500
450
ns
ns
o
TOFF
+25 C
NOTES:
1. VAL = 0V; VAH = 5.0V
2. VAL = 0V; VAH = 4.0
Spec Number 518526
7
Specifications HS-3XXRH/883S
TABLE 4. HS-306/307RH/883S DC POST 100K RAD (Si) ELECTRICAL CHARACTERISTICS
Tested Per Mil-Std-883. Unless Otherwise Specified: HS-306RH/307RH/883S V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
LIMITS
PARAMETER
SYMBOL
+RDS
CONDITIONS
TEMPERATURE
MIN
-
MAX
60
UNITS
Ω
o
“Switch On” Resistance
VD = 10V, IS = -10mA, S1/S2/S3/S4
VD = -10V, IS = 10mA, S1/S2/S3/S4
VS = +14V, VD = -14V, S1/S2/S3/S4
VS = -14V, VD = +14V, S1/S2/S3/S4
+25 C
o
-RDS
+25 C
-
60
Ω
o
Leakage Current Into the
Source Terminal of an “Off”
Switch
+IS(OFF)
-IS(OFF)
+25 C
-100
-100
100
100
nA
o
+25 C
nA
o
Leakage Current into the Drain
Terminal of an “Off” Switch
+ID(OFF)
-ID(OFF)
-ID(ON)
-ID(ON)
VS = -14V, VD = +14V, S1/S2/S3/S4
VS = +14V, VD = -14V, S1/S2/S3/S4
VS = VD = +14V, S1/S2/S3/S4
VS = VD = -14V, S1/S2/S3/S4
+25 C
-100
-100
-100
-100
100
100
100
100
nA
nA
nA
nA
o
+25 C
o
Leakage Current from an “On”
Driver Into the Switch (Drain &
Source)
+25 C
o
+25 C
o
Positive Supply Current
I(+)
All Channels VA = 0V
All Channels VA = 15V
All Channels VA = 0V
All Channels VA = 15V
All Channels High
+25 C
-
-
100
1
µA
mA
µA
µA
µA
µA
ns
o
+25 C
o
Negative Supply Current
I(-)
+25 C
-100
-100
-1
-
o
+25 C
-
o
High Level Address Current
Low Level Address Current
IAH
IAL
+25 C
+1
+1
300
o
All Channels Low
+25 C
-1
o
Break-Before-Make Time
TOPEN
RL = 300Ω, VS = +3V, (Note 1)
+25 C
2
Delay (HS-307RH/883S Only)
o
Switch Turn-On Time
TON
RL = 300Ω, VS = +3V, (Note 1)
RL = 300Ω, VS = +3V, (Note 1)
+25 C
-
-
500
450
ns
ns
o
Switch Turn-Off Time
TOFF
+25 C
NOTE: 1. VAL = 0V; VAH = 15V
TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS
Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V
GROUP A
SUB-
LIMITS
PARAMETER
“Switch On”
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
o
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
1
1
1
1
1
+25 C
-5
-5
-2
-2
-2
-2
5
Ω
Resistance
o
-RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
+25 C
5
2
2
2
2
Ω
o
Leakage Current
Into the Source
Terminal of an “Off”
Switch
+IS(OFF)
-IS(OFF)
+ID(OFF)
-ID(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
nA
nA
nA
nA
o
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
Leakage Current
into the Drain
Terminal of an “Off”
Switch
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
o
Leakage Current
from an “On” Driver
Into the Switch
+ID(ON)
-ID(ON)
VS = VD = +14V, S1/S2/S3/S4
VS = VD = -14V, S1/S2/S3/S4
1
1
+25 C
-2
-2
2
2
nA
nA
o
+25 C
(Drain & Source)
Spec Number 518526
8
Specifications HS-3XXRH/883S
TABLE 5. HS-302RH/303RH/384RH/390RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS
Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +4.0V, VAL = 0.8V (Continued)
GROUP A
SUB-
LIMITS
PARAMETER
SYMBOL
CONDITIONS
GROUPS
TEMPERATURE
MIN
MAX
UNITS
o
Low Level Input
Address Current
IAL
All Channels VA = 0.8V
1
+25 C
-100
100
nA
o
High Level Input
Address Current
IAH
I(+)
All Channels VA = 4.0V
All Channels VA = 0.8V
1
+25 C
-100
100
nA
o
Positive Supply
Current
1
1
+25 C
-1
1
µA
o
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25 C
-0.1
0.1
mA
o
Negative Supply
Current
I(-)
All Channels VA = 0.8V
1
1
+25 C
-1
-1
1
1
µA
µA
o
VA1 = 0V, VA2 = 4.0V and
VA1 = 4.0V, VA2 = 0V
+25 C
TABLE 5. HS-306RH/307RH/883S DC POST BURN-IN DELTA ELECTRICAL CHARACTERISTICS
Guaranteed, Per Mil-Std-883. Unless Otherwise Specified: V- = -15V, V+ = +15V, VAH = +11.0V, VAL = 3.5V
LIMITS
GROUP A
PARAMETER
SYMBOL
CONDITIONS
SUBGROUPS TEMPERATURE
MIN
MAX
UNITS
o
“Switch On” Resistance
+RDS
VD = 10V, IS = -10mA,
S1/S2/S3/S4
1
1
1
1
1
1
+25 C
-5
5
Ω
o
-RDS
VD = -10V, IS = 10mA,
S1/S2/S3/S4
+25 C
-5
-2
-2
-2
-2
5
2
2
2
2
Ω
o
Leakage Current Into the
Source Terminal of an
“Off” Switch
+IS(OFF) VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
nA
nA
nA
nA
o
-IS(OFF)
VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
Leakage Current into the
Drain Terminal of an “Off”
Switch
+ID(OFF) VS = -14V, VD = +14V,
S1/S2/S3/S4
+25 C
o
-ID(OFF)
VS = +14V, VD = -14V,
S1/S2/S3/S4
+25 C
o
Leakage Current from an
“On” Driver Into the Switch
(Drain & Source)
+ID(ON)
-ID(ON)
VS = VD = +14V, S1/S2/S3/S4
VS = VD = -14V, S1/S2/S3/S4
1
1
+25 C
-2
-2
2
2
nA
nA
o
+25 C
o
Low Level Input Address
Current
IAL
IAH
I(+)
All Channels VA = 3.5V
All Channels VA = 11V
1
1
+25 C
-100
-100
100
100
nA
nA
o
High Level Input Address
Current
+25 C
o
Positive Supply Current
All Channels VA = 0V
All Channels VA = 15V
All Channels VA = 0V
All Channels VA = 15V
1
1
1
1
+25 C
-1
-1
-1
-1
1
1
1
1
µA
µA
µA
µA
o
+25 C
o
Negative Supply Current
I(-)
+25 C
o
+25 C
Spec Number 518526
9
Specifications HS-3XXRH/883S
TABLE 6. APPLICABLE SUBGROUPS
GROUP A SUBGROUPS
RECORDED
CONFORMANCE GROUPS
Initial Test
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
Sample/5005
TESTED
1, 7, 9
1, (Note 2)
Interim Test
PDA
1, 7, 9, Deltas
1, 7, Deltas
1, Deltas, (Note 2)
Final Test
Group A (Note 1)
Group B
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
Subgroup B-5
Subgroup B-6
1, 2, 3, Deltas, (Note 2)
Group D
1, 7, 9
Group E, Subgroup 2
NOTES:
1, 7
1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised.
2. Table 5 parameters on.y.
Spec Number 518526
10
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Intersil Space Level Product Flow
Wafer Lot Acceptance (All Lots) Method 5007
(Includes SEM)
100% Interim Electrical Test (T1)
100% Delta Calculation (T0-T1)
100% PDA, Method 5004 (Note 1)
GAMMA Radiation Verification (Each Wafer) Method 1019,
4 Samples/Wafer, 0 Rejects
100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
Equivalent, Method 1015
100% Interim Electrical Test (T2)
100% Delta Calculation (T0-T2)
100% PDA, Method 5004 (Note 1)
100% Final Electrical Test
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Fine/Gross Leak, Method 1014
100% Radiographic, Method 2012 (Note 2)
100% External Visual, Method 2009
Sample - Group A, Method 5005 (Note 3)
Sample - Group B, Method 5005
Sample - Group D, Method 5005
100% Data Package Generation (Note 4)
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 72hrs. min.,
+125oC min.
NOTES:
1. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
4. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quan-
tity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. (See Table 6)
• Group B and D attributes and/or Generic data.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
by an authorized Quality Representative.
Spec Number 518526
11
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Irradiation Circuits
V+
V+
NC
S3
NC
S3
V1
V1
1
2
3
4
5
6
7
14
13
12
11
10
9
1
2
3
4
5
6
7
14
13
12
11
10
9
R1
R2
R3
R4
R8
R7
R6
R5
R1
R2
R3
R4
R8
R7
R6
R5
S4
D4
D2
S4
D4
D2
D3
D3
D1
D1
S1
S2
S1
S2
IN2
IN2
IN1
GND
IN1
GND
V3
V2
V3
V2
V-
V-
8
8
HS-302RH/303RH/883S
HS-384RH/390RH/883S
HS-306RH/307RH/883S
NOTES:
NOTES:
1. R1 - R8 = 10kΩ ± 5%, 1/4W
2. V1 = +15V ± 10%
1. R1 - R8 = 10kΩ ± 5%, 1/4W
2. V1 = +15V ± 10%
3. V2 = -15V ± 10%
3. V2 = -15V ± 10%
4. V3 = +5V ± 10%
4. V3 = +12V ± 10%
5. All irradiation testing is performed in the 14 pin package.
5. All irradiation testing is performed in the 14 pin package.
Burn-In Circuits
VA V-
V+
R
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
V+
1
2
3
4
5
6
7
14
13
12
11
10
9
VA
C
D
R
-V
R
R
R
R
D
D
C
C
R
R
+V
V-
8
C
D
STATIC CONFIGURATION
HS-302RH/303RH/306RH/307RH/883S
STATIC CONFIGURATION
HS-384RH/390RH/883S
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
5. VA = +15.5V ± 0.5V for 306RH/307RH
6. VA = +5.5V ± 0.5V for 302RH/303RH
4. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
5. VA = +5.5V ± 0.5V
Spec Number 518526
12
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Burn-In Circuits (Continued)
F
V-
V+
F
V-
V+
V+
1
2
3
4
5
6
7
14
13
12
11
10
9
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
NC
V+
C
C
D
D
R
R
R
R
R
R
R
R
V-
8
8
V-
C
C
D
D
DYNAMIC CONFIGURATION
HS-302RH/303RH/883S
DYNAMIC CONFIGURATION
HS-306RH/307RH/883S
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
3. D = IN4002 (or equivalent)
4. F = 100kHz square wave, 50% duty cycle,
4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = 5.5V ± 0.5V
VL = 0.8V max., VH = 14V ± 1V
5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
R
1
16
F
2
15
14
13
12
11
10
9
R
-V
3
4
D
D
C
C
5
R
+V
6
7
R
8
DYNAMIC CONFIGURATION
HS-384RH/390RH/883S
NOTES:
1. R = 10KΩ ± 5%, 1/4W (4 per position)
2. C = 0.01µF minimum (per position) or 0.1µF minimum per row
3. D = IN4002 (or equivalent)
4. F = 100kHz square wave, 50% duty cycle,
VL = 0.8V max., VH = +5.5V ±0.5V
5. +V = +15.5V ± 0.5V, -V = -15.5V ± 0.5V
Spec Number 518526
13
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Test Circuits
SWITCH TYPE
HS-302RH/303RH/384RH/390RH/883S
HS-306RH/307RH/883S
VINH
4V
15V
V+
+15V
LOGIC “1” = SWITCH ON
VINH
VO
LOGIC INPUT
50%
50%
SWITCH
OUTPUT
VS = +3V
0V
RL
300Ω
VS
90%
LOGIC
INPUT
10%
V-
-15V
0V
tON
GND
SWITCH OUTPUT
tOFF
FIGURE 1. SWITCHING TEST CIRCUIT (tON, tOFF)
SWITCH TYPE
HS-303RH/390RH/883S
VINH
5V
HS-307RH/883S
15V
LOGIC “1” =
SWITCH ON
V+
+15V
RL1 = RL2 = 300Ω
VINH
D1
D2
LOGIC INPUT
VS1 = +3V
VS2 = +3V
OUT 1
OUT 2
0V
50%
50%
RL2
RL1
0V
OUT 1
OUT 2
LOGIC
INPUT
0V
V-
50%
tBBM
50%
SWITCH OUTPUT
-15V
GND
tBBM
FIGURE 2. BREAK-BEFORE-MAKE TEST CIRCUIT (tBBM)
ID(OFF)
IS(OFF)
VA
VB
D
S
D
S
A
A
±
±
10mA
±14V
±10V
14V
ID(ON)
±14V
A
VB - VA
± 10mA
RON =
FIGURE 3. ON RESISTANCE TEST
CIRCUIT (RON)
FIGURE 4. ON LEAKAGE CURRENT
TEST CIRCUIT (IDON)
FIGURE 5. OFF LEAKAGE CURRENT
TEST CIRCUIT (ISOFF,
IDOFF)
Spec Number 518526
14
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
Metallization Topology
DIE DIMENSIONS:
WORST CASE CURRENT DENSITY: 1.732e05 A/cm2
Die Size: 2130 x 1930µm
Die Thickness: 11 ±1 mils
SUBSTRATE POTENTIAL: Unbiased
PROCESS: DI Linear Metal Gate CMOS
METALLIZATION:
Type: Al, 12.5kÅ ± 2kÅ
Back: Gold
GLASSIVATION:
Type: SiO2
Thickness: 8kÅ ± 1kÅ
Metallization Mask Layout
HS-302RH/303RH/306RH/307RH/883S
D3
D1
S1
D4
D2
S2
IN1
IN2
HS-384RH/390RH/883S
S3
S4
V-
GND
V+
Spec Number 518526
15
HS-302RH/303RH/306RH/307RH/384RH/390RH/883S
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
EUROPE
ASIA
Intersil Corporation
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
Spec Number
16
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