IRF646 [INTERSIL]
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET; 14A ， 275V ， 0.280 Ohm的N通道功率MOSFET
| 型号： | IRF646 |
| 厂家： | 
Intersil |
| 描述： | 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF646
Data Sheet
June 1999
File Number 2169.3
14A, 275V, 0.280 Ohm, N-Channel Power
MOSFET
Features
• 14A, 275V
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
• r
= 0.280Ω
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275VDC Rating-120VAC Line System Operation
• Related Literature
Formerly developmental type TA17423.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF646
Symbol
D
IRF646
TO-220AB
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-214
IRF646
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
IRF646
275
275
14
8.8
56
±20
125
1.0
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
A
A
A
V
W
DS
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
o
W/ C
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
550
-55 to 150
mJ
C
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0V (Figure 10)
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
= 250µA, V
D GS
275
-
-
-
-
-
-
-
4
V
V
DSS
V
V
V
V
V
V
= V , I = 250µA
DS
2
GS(TH)
GS
DS
DS
DS
GS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
DSS GS
= 0V
-
25
250
-
µA
µA
A
DSS
o
= 0.8 x Rated BV
, V
= 0V, T = 125 C
-
DSS GS
J
On-State Drain Current (Note 2)
Gate to Source Leakage Current
I
> I
D(ON)
x r
DS(ON)MAX GS
, V
= 10V (Figure 7)
14
D(ON)
I
= ±20V
-
±100
nA
Ω
GSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 8A, V
= 10V (Figures 8, 9)
-
0.200 0.280
DS(ON)
D
GS
g
V
≥ 50V, I = 8A (Figure 12)
6.7
10
16
67
53
49
39
-
S
fs
DS
DD
D
t
V
= 125V, I ≈ 14A, R
= 9.1Ω, R = 8.6Ω,
-
-
-
-
-
24
100
80
74
59
ns
ns
ns
ns
nC
d(ON)
D
GS
L
MOSFET Switching Times are Essentially
Independent of Operating Temperature
Rise Time
t
r
Turn-Off Delay Time
t
d(OFF)
Fall Time
t
f
Total Gate Charge
Q
V
= 10V, I = 14A, V
= 0.8 x Rated BV
DSS,
g(TOT)
GS
D
DS
(Gate to Source + Gate to Drain)
I
= 1.5mA, (Figure 14) Gate Charge is
G(REF)
Essentially Independent of Operating Temperature
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
Q
-
-
-
-
-
-
6.6
20
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gs
gd
C
V
= 25V, V
DS GS
= 0V, f = 1MHz (Figure 11)
1300
320
69
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
Internal Drain Inductance
C
RSS
L
Measured from the Contact Modified MOSFET
Screw on Tab to Center of Symbol Showing the
4.5
D
S
Die
Internal Devices
Inductances
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
-
7.5
7.5
-
-
nH
nH
D
L
D
Internal Source Inductance
L
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
G
L
S
S
o
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
1
C/W
C/W
θJC
Free Air Operation
80
θJA
4-215
IRF646
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
14
UNITS
Continuous Source to Drain Current
I
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
-
-
A
A
SD
D
Pulse Source to Drain Current
(Note 3)
I
56
SDM
G
S
o
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
T = 25 C, I
J
= 14A, V
GS
= 0V (Figure 13)
-
-
1.8
640
7.2
V
SD
SD
SD
SD
o
t
T = 25 C, I
J
= 14A, dI /dt = 100A/µs
SD
150
1.6
300
3.4
ns
µC
rr
o
Q
T = 25 C, I
= 14A, dI /dt = 100A/µs
SD
RR
J
2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
o
4. V
= 50V, starting T = 25 C, L = 4.5mH, R = 25Ω, peak I = 14A.
J G AS
DD
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
15
12
9
6
3
0
25
50
75
T , CASE TEMPERATURE ( C)
C
100
125
150
0
50
100
150
o
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
SINGLE PULSE
0.01
t
t
1
2
NOTES:
DUTY FACTOR: D = t /t
1
2
T
= P
x Z
x R
+ T
J
DM
θJC
θJC C
0.001
-5
-4
-3
10
-2
10
-1
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-216
IRF646
Typical Performance Curves Unless Otherwise Specified (Continued)
1000
100
10
25
20
15
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
OPERATION IN THIS
AREA MAY BE
10V
LIMITED BY r
DS(ON)
6V
10µs
100µs
5.5V
5V
1ms
10ms
DC
1
o
= 25 C
= MAX RATED
5
0
T
T
C
J
4.5V
4V
SINGLE PULSE
0.1
0
25
50
75
100
125
1
10
100
1000
V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DS
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
25
100
10
1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V
GS
V
≥ 50V
DS
20
15
10
5
V
= 6V
GS
V
= 5.5V
GS
o
o
150 C
25 C
V
= 5V
GS
V
= 4V
V
= 4.5V
GS
GS
0
0.1
0
4
6
8
10
0
2
4
6
8
10
2
V
, DRAIN TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
DS
GS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
2.0
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= 10V, I = 14A
GS
D
2.4
1.8
1.2
0.6
0
1.5
1.0
V
= 10V
GS
V
= 20V
GS
0.5
0
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
o
15
45
30
, DRAIN CURRENT (A)
60
75
I
T , JUNCTION TEMPERATURE ( C)
J
D
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-217
IRF646
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
3000
2400
1800
1200
600
V
= 0V, f = 1MHz
I
= 250µA
C
C
C
= C
+ C
GD
GD
GS
D
ISS
GS
= C
RSS
OSS
≈ C + C
DS
GD
C
ISS
C
C
OSS
RSS
0
10
, DRAIN TO SOURCE VOLTAGE (V)
-60 -40 -20
0
20 40 60 80 100 120 140 160
o
100
0
T , JUNCTION TEMPERATURE ( C)
J
V
DS
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
100
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DS
DUTY CYCLE = 0.5% MAX
V
≥ 50V
12
9
o
25 C
10
o
150 C
o
25 C
6
o
150 C
1
3
0
0.1
0
5
10
15
20
25
0
0.4
0.8
1.2
1.6
2.0
I
, DRAIN CURRENT (A)
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
D
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
20
I
= 14A
D
16
12
8
V
= 125V
DS
= 50V
V
DS
V
= 200V
DS
4
0
0
12
24
36
48
60
Q , GATE CHARGE (nC)
g
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-218
IRF646
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
V
DD
10%
10%
R
G
0
0
-
DUT
90%
50%
V
GS
50%
PULSE WIDTH
10%
V
GS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
V
DD
Q
SAME TYPE
AS DUT
g(TOT)
V
GS
12V
BATTERY
0.2µF
Q
gd
50kΩ
0.3µF
Q
gs
D
S
V
DS
G
DUT
0
0
I
G(REF)
0
V
I
DS
G(REF)
I
CURRENT
SAMPLING
RESISTOR
I
CURRENT
SAMPLING
RESISTOR
G
D
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
4-219
IRF646
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4-220
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