IRF6601 [INFINEON]
DirectFET⑩ Power MOSFET(Vdss=20V); DirectFET⑩功率MOSFET （ VDSS = 20V ）
| 型号： | IRF6601 |
| 厂家： | 
Infineon |
| 描述： | DirectFET⑩ Power MOSFET(Vdss=20V) |
| 文件： | 总8页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94366C
IRF6601
DirectFETTM Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
VDSS
20V
RDS(on) max
3.8mΩ@VGS = 10V
5.0mΩ@VGS = 4.5V
ID
26A
21A
l Dual Sided Cooling Compatible
l Compatible with exisiting Surface Mount
Techniques
DirectFET ISOMETRIC
Description
The IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
toachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile. TheDirectFET
packageiscompatiblewithexistinglayoutgeometriesusedinpowerapplications,PCBassemblyequipmentandvaporphase,
infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling to maximize thermal transfer
in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601
offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
V
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
85
26
20
A
200
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
Power Dissipation
3.6
W
Power Dissipation
2.3
Power Dissipation
42
28
Linear Derating Factor
mW/°C
VGS
Gate-to-Source Voltage
±20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambientꢀ
Junction-to-Case
Typ.
–––
–––
–––
–––
–––
Max.
35
Units
RθJA
12.5
20
RθJA
°C/W
RθJC
3.0
RθJ-PCB
Junction-to-PCB mounted
1.0
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1
3/25/02
IRF6601
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 ––– –––
Conditions
VGS = 0V, ID = 100µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 3.8
––– ––– 5.0
VGS = 10V, ID = 26A
VGS = 4.5V, ID = 21A
VDS = VGS, ID = 250µA
VDS = 16V, VGS = 0V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
1.0
––– 3.0
––– ––– 20
––– ––– 100
––– ––– 100
––– ––– -100
Drain-to-Source Leakage Current
µA
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20 V
IGSS
nA
VGS = -20 V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge Cont FET
Gate-to-Source Charge
Gate to Drain ("Miller")Charge
Output Charge
Min. Typ. Max. Units
Conditions
50
––– –––
36 54
S
VDS = 10 V, ID = 21 A
ID = 21A
Qg
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
11 –––
12 –––
48 –––
16 –––
nC VDS = 16 V
VGS = 4.5 V,
VDS = 0 V, VGS = 16V
Turn-On Delay Time
Rise Time
VDD = 15 V
ID = 21 A
––– 140 –––
––– 33 –––
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1 Ω
VGS = 4.5 V
VGS = 0V
––– 110 –––
––– 3440 –––
––– 2430 –––
––– 380 –––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
65
Units
mJ
IAR
Avalanche Current
–––
21
A
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
26
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
200
S
––– 0.83 1.2
––– 0.68 –––
V
TJ = 25°C, IS = 21A, VGS = 0V
VSD
Diode Forward Voltage
TJ = 125°C, IS = 21A, VGS = 0V
TJ = 25°C, IF = 21A, VR=15 V
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 60
––– 94 140
––– 62 93
––– 88 130
90
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 21A, VR=15 V
nC di/dt = 100A/µs
Qrr
2
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IRF6601
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
26A
=
I
D
1.5
1.0
0.5
0.0
T
= 25°C
J
T
= 150°C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
2.5
3.0
3.5 4.0
°
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF6601
6000
12
10
8
V
C
C
= 0V,
= C
f = 1MHz
C
D
= 21A
GS
iss
I
V
= 16V
= 10V
= 4V
+ C
+ C
SHORTED
ds
DS
gs
gd ,
V
= C
= C
DS
rss
oss
gd
ds
5000
V
C
DS
gd
4000
3000
2000
1000
C
iss
6
C
oss
4
2
C
rss
0
1
0
10
100
0
20
40
60
80
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
100
10
1
T
= 150°C
J
100µsec
T
= 25°C
J
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
0.1
0
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF6601
30
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
150
°
( C)
, Case Temperature
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
t
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF6601
0.02
0.01
0.00
0.006
V
GS
= 4.5V
0.005
0.004
0.003
V
= 10V
GS
I
= 26A
D
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
60
I
120
180
240
Gate -to -Source Voltage (V)
GS,
, Drain Current (A)
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
160
V
DS
D.U.T.
-
I
V
D
G
TOP
9.4A
V
GS
17A
21A
3mA
Charge
BOTTOM
I
I
D
G
120
80
40
0
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
I
A
20V
°
( C)
Ω
0.01
Starting T , Junction Temperature
t
p
J
I
AS
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF6601
DirectFET Board Footprint
DirectFET Tape and Reel Dimension
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7
IRF6601
DirectFET Outline Dimension
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Used double sided cooling, mounting pad
ꢀMounted on minimum footprint full size board with metalized back and with small clip heatsink
TC measured with thermal couple mounted to top (Drain) of part.
Starting TJ = 25°C, L = 0.30mH, RG = 25W, IAS = 21A. (See Figure 14)
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/02
8
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