RF1K49221 [INTERSIL]
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET; 2.5A ， 60V ， 0.130欧姆，额定ESD ，双N沟道LittleFET⑩功率MOSFET
| 型号： | RF1K49221 |
| 厂家： | 
Intersil |
| 描述： | 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFET⑩ Power MOSFET |
| 文件： | 总8页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF1K49221
Data Sheet
August 1999
File Number 4314.1
2.5A, 60V, 0.130 Ohm, ESD Rated, Dual
N-Channel LittleFET™ Power MOSFET
Features
• 2.5A, 60V
• r = 0.130Ω
The RF1K49221 Dual N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
DS(ON)
• 2kV ESD Protected
®
• Temperature Compensating PSPICE Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
The RF1K49221 incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly developmental type TA49221.
Symbol
Ordering Information
D1(8)
D1(7)
PART NUMBER
PACKAGE
BRAND
RF1K49221
RF1K49221
MS-012AA
S1(1)
G1(2)
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4922196.
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
8-136
RF1K49221
o
Absolute Maximum Ratings T = 25 C Unless Otherwise Specified
A
RF1K49221
UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
60
60
V
V
V
DSS
DGR
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
2.5
A
D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Refer to Peak Current Curve
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Refer to UIS Curve
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
0.016
2
W
W/ C
D
o
o
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . ESD
kV
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 125 C.
J
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
A
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V, (Figure 12)
MIN
TYP
-
MAX
UNITS
V
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
I
60
1
-
-
DSS
GS(TH)
D
GS
V
V
= V , I = 250µA, (Figure 11)
-
3
V
GS
DS D
o
I
V
V
= 60V,
= 0V
T
T
= 25 C
-
1
50
10
25
0.130
0.350
50
-
µA
µA
µA
µA
Ω
DSS
DS
GS
A
o
= 150 C
-
-
A
o
Gate to Source Leakage Current
Drain to Source On Resistance
I
V
V
= ±20V, T = 25 C
-
-
GSS
GS
GS
A
o
= ±10V, T = 85 C
-
-
A
r
I
= 2.5A,
(Figures 9, 10)
V
V
= 10V
-
-
DS(ON)
D
GS
GS
= 4.5V
-
-
Ω
Turn-On Time
t
V
R
R
= 30V, I
2.5A,
-
-
ns
ON
DD
D
= 12Ω, V
= 10V,
L
GS
Turn-On Delay Time
Rise Time
t
-
10
25
68
32
-
ns
d(ON)
= 25Ω,
GS
t
(Figure 14)
-
-
ns
r
Turn-Off Delay Time
Fall Time
t
-
-
ns
d(OFF)
t
-
-
ns
f
Turn-Off Time
t
-
150
29
16
1.0
-
ns
OFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
Q
V
V
V
V
= 0V to 20V
= 0V to 10V
= 0V to 2V
V
R
= 48V, I
D
= 19.2Ω
2.5A,
-
24
13
0.8
365
140
40
-
nC
nC
nC
pF
pF
pF
g(TOT)
GS
GS
GS
DS
DD
L
Q
-
g(10)
g(TH)
I
= 1.0mA
g(REF)
Q
(Figure 14)
-
C
= 25V, V
GS
= 0V,
-
ISS
OSS
RSS
f = 1MHz
(Figure 13)
C
C
-
-
-
-
o
R
Pulse Width = 1s
-
62.5
C/W
θJA
Device mounted on FR-4 material
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
58
UNITS
V
V
I
I
= 2.5A
-
-
-
-
SD
SD
t
= 2.5A, dI /dt = 100A/µs
SD
ns
rr
SD
8-137
RF1K49221
Typical Performance Curves
1.2
3.0
1.0
0.8
2.5
2.0
1.5
1.0
0.6
0.4
0.2
0
0.5
0
75
100
125
150
50
0
25
50
75
100
125
150
25
o
o
T , AMBIENT TEMPERATURE ( C)
T , AMBIENT TEMPERATURE ( C)
A
A
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
1
0.02
0.01
P
DM
0.1
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
JA A
DM
JA
θ
θ
SINGLE PULSE
0.001
-4
10
-5
-3
-2
-1
0
1
2
3
10
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
50
10
100
o
= 25 C
T
= MAX RATED
V
= 20V
= 10V
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
T
J
GS
A
o
o
T
= 25 C
A
150 - T
I = I
A
25
V
125
GS
1
0.1
5ms
10ms
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100ms
OPERATION IN THIS
AREA MAY BE
1s
LIMITED BY r
V
= 60V
10
DS(ON)
DSS(MAX)
DC
0.01
1
10
-5
-4
-3
10
-2
-1
0
1
0.1
1
100 200
10
10
10
10
10
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
8-138
RF1K49221
Typical Performance Curves (Continued)
15
20
16
12
8
PULSE DURATION = 80µs
V
= 20V
= 10V
If R = 0
GS
DUTY CYCLE = 0.5% MAX
t
= (L)(I )/(1.3*RATED BV
- V )
DD
AV
If R ≠ 0
= (L/R)ln[(I *R)/(1.3*RATED BV - V ) +1]
DSS DD
AS
DSS
o
V
GS
T = 25 C
A
10
V
= 8V
GS
t
AV
AS
V
= 7V
GS
V
GS
= 6V
= 5V
o
STARTING T = 25 C
J
V
GS
4
V
= 4.5V
GS
o
STARTING T = 150 C
J
0
1
0
1.5
3.0
4.5
6.0
7.5
0.1
1
10
100
t
, TIME IN AVALANCHE (ms)
V , DRAIN TO SOURCE VOLTAGE (V)
DS
AV
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
20
500
400
300
200
100
0
o
V
= 15V
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250µs, V
= 15V
25 C
DD
DD
DUTY CYCLE = 0.5% MAX
16
12
8
I
I
= 5.0A
= 2.5A
D
o
o
150 C
-55 C
D
D
I
= 1.25A
I
= 0.625A
D
4
0
4
5
6
7
8
9
10
3
0
2
4
6
8
10
V
, GATE TO SOURCE VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
GS
GS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.0
1.5
1.0
0.5
0
1.2
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
V
= V , I = 250µA
GS
DS
D
V
= 10V, I = 2.5A
GS
D
1.0
0.8
0.6
0.4
-80
-80
-40
0
40
80
120
160
-40
0
40
80
120
160
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
8-139
RF1K49221
Typical Performance Curves (Continued)
500
1.2
I
= 250µA
D
C
ISS
400
300
200
1.1
1.0
0.9
0.8
V
= 0V, f = 1MHz
GS
ISS
C
C
C
= C
+ C
GS
= C
GD
RSS
OSS
GD
= C
+ C
GD
DS
C
C
OSS
100
0
RSS
0
5
10
15
20
25
-80
-40
0
40
80
120
160
o
V
, DRAIN TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
DS
J
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
60
10.0
V
= BV
DSS
V
= BV
DSS
DD
DD
45
30
15
0
7.5
5.0
R
= 24W
L
I
= 0.30mA
g(REF)
V
= 10V
GS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
V
V
V
= BV
DD
DD
DD
DD
DSS
2.5
0
= 0.75 BV
= 0.50 BV
= 0.25 BV
DSS
DSS
DSS
I
I
g(REF)
g(REF)
t, TIME (ms)
20-----------------------
80-----------------------
I
I
g(ACT)
g(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
V
DS
BV
DSS
t
L
P
V
DS
I
AS
VARY t TO OBTAIN
P
+
-
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
8-140
RF1K49221
Test Circuits and Waveforms (Continued)
t
t
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
+
-
V
GS
10%
10%
0
0
0V
90%
50%
DUT
R
GS
V
GS
50%
PULSE WIDTH
10%
FIGURE 17. SWITCHING TIME TEST CIRCUIT
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
V
DS
V
Q
R
DD
g(TOT)
L
V
DS
V
= 20V
GS
V
GS
Q
g(10)
+
-
V
DD
V
= 10V
V
GS
GS
DUT
V
= 2V
GS
I
G(REF)
Q
g(TH)
I
g(REF)
FIGURE 19. GATE CHARGE TEST CIRCUIT
FIGURE 20. GATE CHARGE WAVEFORMS
Soldering Precautions
o
The soldering process creates a considerable thermal stress
on any semiconductor component. The melting temperature
of solder is higher than the maximum rated temperature of
the device. The amount of time the device is heated to a high
temperature should be minimized to assure device reliability.
Therefore, the following precautions should always be
observed in order to minimize the thermal stress to which
the devices are subjected.
3. Themaximumtemperaturegradientshouldbelessthan5 C
per second when changing from preheating to soldering.
4. The peak temperature in the soldering process should be
o
at least 30 C higher than the melting point of the solder
chosen.
5. The maximum soldering temperature and time must not
o
exceed 260 C for 10 seconds on the leads and case of
the device.
6. After soldering is complete, the device should be allowed
to cool naturally for at least three minutes, as forced cool-
ing will increase the temperature gradient and may result
in latent failure due to mechanical stress.
1. Always preheat the device.
2. Thedeltatemperaturebetweenthepreheatandsoldering
o
should always be less than 100 C. Failure to preheat the
device can result in excessive thermal stress which can
damage the device.
7. During cooling, mechanical stress or shock should be
avoided.
8-141
RF1K49221
PSPICE Electrical Model
SUBCKT RF1K49221 2 1 3 ;
rev 4/8/97
CA 12 8 5.60e-10
CB 15 14 5.30e-10
CIN 6 8 3.40e-10
LDRAIN
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
DPLCAP
DRAIN
2
5
10
RLDRAIN
RSLC1
51
+
RSLC2
DBREAK
11
EBREAK 11 7 17 18 67.29
EDS 14 8 5 8 1
EGS 13 8 6 8 1
5
51
ESLC
ESG 6 10 6 8 1
50
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
+
RDRAIN
16
DBODY
6
8
ESG
EBREAK
17
18
+
EVTHRES
IT 8 17 1
+
21
19
8
MWEAK
LGATE
EVTEMP
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 1.12e-9
LSOURCE 3 7 4.50e-10
RGATE
+
6
18
MMED
22
9
20
MSTRO
8
RLGATE
DESD1
LSOURCE
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
91
DESD2
RIN
CIN
RSOURCE
SOURCE
3
7
RLSOURCE
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 28.58e-3
RGATE 9 20 15.34
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RLDRAIN 2 5 10
RLGATE 1 9 11.2
RLSOURCE 3 7 4.5
RSOURCE 8 7 RSOURCEMOD 28.85e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A
12
S2A
RBREAK
15
14
13
13
8
18
17
S1B
CA
S2B
RVTEMP
19
13
CB
+
IT
14
+
VBAT
6
8
5
8
EDS
EGS
+
8
22
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
RVTHRES
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*30),2.5))}
.MODEL DBODYMOD D (IS = 1.95e-13 RS = 2.58e-2 TRS1 = 2.00e-3 TRS2 =-4.39e-7 CJO = 5.15e-10 TT = 5.23e-8 M=0.5)
.MODEL DBREAKMOD D (RS = 6.24e-1 TRS1 =-3.03e-4 TRS2 = 4.27e-6
.MODEL DESD1MOD D (BV=32.3 TBV1=0 TBV2=0 RS=0 TRS1=0 TRS2=0
.MODEL DESD2MOD D (BV=32.5 TBV1=0 TBV2=0 RS=25 TRS1=5.18e-4 TRS2=-1.52e-6)
.MODEL DPLCAPMOD D (CJO = 1.80e-10 IS = 1e-30 N = 10 M=0.5)
.MODEL MMEDMOD NMOS (VTO=2.755 KP=0.21 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=15.34)
.MODEL MSTROMOD NMOS (VTO=3.165 KP=3.75 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD NMOS (VTO=2.520 KP=0.040 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=153.4 RS=0.1)
.MODEL RBREAKMOD RES (TC1 = 1.10e-3 TC2 = -1.09e-6)
.MODEL RDRAINMOD RES (TC1 = 1.15e-2 TC2 = 4.09e-5
.MODEL RSLCMOD RES (TC1=3.03e-3 TC2=4.52e-6)
.MODEL RSOURCEMOD RES (TC1=0 TC2=0)
.MODEL RVTHRESMOD RES (TC=-7.20e-4 TC2=-7.11e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.01e-3 TC2 = 1.81e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -7.80 VOFF= -4.80)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.80 VOFF= -7.80)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.10 VOFF= 4.10)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.10 VOFF= 1.10)
.ENDS
NOTE:For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options;IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
8-142
RF1K49221
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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TEL: (32) 2.724.2111
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TEL: (407) 724-7000
FAX: (407) 724-7240
8-143
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OHMITE
RF1S0CA16R5F
Fixed Resistor, Metal Film, 1W, 16.5ohm, 350V, 1% +/-Tol, -100,100ppm/Cel, 3916,
OHMITE
RF1S0CA1R10JT
Fixed Resistor, Metal Film, 1W, 1.1ohm, 350V, 5% +/-Tol, 200ppm/Cel, Surface Mount, 3916, CHIP
OHMITE
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