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2N6796EDPBF [IRF]

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;
2N6796EDPBF
元器件型号： 2N6796EDPBF
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
PDF文件： 总11页 (文件大小：325K)
下载文档：  下载PDF数据表文档文件
型号参数：2N6796EDPBF参数
 查看货源

2N6796LCC4

 N-CHANNEL POWER MOSFET

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25 SEME-LAB

2N6796TX

 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 RENESAS

2N6796TXV

 8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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1 RENESAS

2N6796U

 N-Channel

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46 ETC

2N6796U

 N-CHANNEL MOSFET

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19 MICROSEMI

2N6796U

 N-CHANNEL MOSFET

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32 MICROSEMI

2N6797

 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39

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19 ETC

2N6798

 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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72 ETC

2N6798

 N-CHANNEL ENHANCEMENT MODE TRANSISTOR

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182 SEME-LAB

2N6798

 N-CHANNEL MOSFET

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32 MICROSEMI

2N6798

 N-CHANNEL MOSFET

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45 MICROSEMI

2N6798

 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

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70 ETC

2N6798_10

 N-CHANNEL MOSFET

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15 MICROSEMI

2N6798E

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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2 IRF

2N6798EA

 Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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1 IRF
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