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元器件品牌
IRF1104S
[IRF]
HEXFET Power MOSFET; HEXFET功率MOSFET
元器件型号:
IRF1104S
生产厂家:
INTERNATIONAL RECTIFIER
描述和应用:
HEXFET Power MOSFET
HEXFET功率MOSFET
PDF文件:
总10页 (文件大小:211K)
下载文档:
下载PDF数据表文档文件
型号参数:IRF1104S参数
查看货源
IRF1104SPBF
HEXFET Power MOSFET
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156
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72
IRF
IRF1104STRLPBF
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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156
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0
IRF
IRF1104STRRPBF
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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156
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0
IRF
IRF-110UH+-10%EVE2
General Purpose Inductor, 10uH, 10%, Ferrite-Core,
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156
-
0
VISHAY
IRF-1120UH+-10%EBE2
General Purpose Inductor, 120uH, 10%, Ferrite-Core,
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156
-
0
VISHAY
IRF-1120UH+-10%EVE2
General Purpose Inductor, 120uH, 10%, Ferrite-Core,
Warning
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156
-
0
VISHAY
IRF-118+/-10%
General Fixed Inductor, 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED
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156
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0
VISHAY
IRF-12.2+/-10%
General Fixed Inductor, 1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED
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156
-
0
VISHAY
IRF-12.210%
General Fixed Inductor, 1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
Warning
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156
-
0
VISHAY
IRF120
N-CHANNEL POWER MOSFETS
Warning
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156
-
983
SAMSUNG
IRF120
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs
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156
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599
INTERSIL
IRF120
N-Channel Power MOSFETs, 11 A, 60-100 V
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156
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493
FAIRCHILD
IRF120-123
N-Channel Power MOSFETs, 11 A, 60-100 V
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156
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119
FAIRCHILD
IRF1205
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156
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926
ETC
IRF120E
Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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156
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3
IRF
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