IRF7379 [INFINEON]
Power MOSFET; 功率MOSFET
| 型号： | IRF7379 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET |
| 文件： | 总10页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91625
IRF7379
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Complimentary Half Bridge
l Surface Mount
N-CHANNEL MOSFET
N-Ch P-Ch
1
8
S1
D1
D
2
7
G 1
VDSS 30V
-30V
3
4
6
5
S2
D
D
l Fully Avalanche Rated
G 2
P-CHANNEL MO SFET
RDS(on) 0.045Ω 0.090Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO -8
Absolute Maximum Ratings
Max.
Parameter
Units
N-Channel
P-Channel
-30
VSD
Drain-to-Source Voltage
30
5.8
4.6
46
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
-4.3
A
-3.4
-34
PD @TA = 25°C
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 20
VGS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery dv/dt
5.0
-5.0
V/ns
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance Ratings
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
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1
12/8/98
IRF7379
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
GS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch 30
P-Ch -30
—
—
0.032
-0.037
0.038 0.045
0.055 0.075
0.070 0.090
0.130 0.180
—
—
—
—
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
V
N-Ch
P-Ch
—
—
—
—
—
—
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
V
V
V
V
V
V
V
V
V
V
V
V
GS = 10V, ID = 5.8A
GS = 4.5V, ID = 4.9A
GS = -10V, ID =- 4.3A
GS = -4.5V, ID =- 3.7A
DS = VGS, ID = 250µA
DS = VGS, ID = -250µA
DS = 15V, ID = 2.4A
DS = -24V, ID = -1.8A
DS = 24 V, VGS = 0V
N-Ch
P-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
N-Ch 1.0
P-Ch -1.0
N-Ch 5.2
P-Ch 2.5
—
—
—
—
—
—
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
—
—
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
—
—
—
—
—
1.0
-1.0
25
-25
±100
25
25
2.9
2.9
7.9
9.0
—
—
—
—
—
—
—
—
—
DS = -24V, VGS = 0V
DS = 24 V, VGS = 0V, TJ = 125°C
DS = -24V, VGS = 0V, TJ = 125°C
IDSS
Drain-to-SourceLeakageCurrent
µA
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P ––
VGS = ± 20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
RiseTime
nC
—
—
—
P-Channel
D = -1.8A, VDS = -24V, VGS = -10V
I
6.8
11
21
17
22
25
7.7
18
4.0
6.0
520
440
180
200
72
93
N-Channel
VDD = 15V, ID = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
ns
td(off)
tf
Turn-OffDelayTime
FallTime
P-Channel
V
R
DD = -15V, ID = -1.8A, RG = 6.0Ω,
D = 8.2Ω
LD
LS
Internal Drain Inductace
Internal Source Inductance
Between lead, 6mm (0.25in.) from
package and center of die contact
nH
pF
N-P
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Ciss
Coss
Crss
Input Capacitance
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
Output Capacitance
P-Channel
Reverse Transfer Capacitance
V
GS = 0V, VDS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
47
53
56
66
3.1
-3.1
46
-34
1.0
-1.0
71
80
84
99
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
DiodeForwardVoltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
VSD
trr
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
V
N-Channel
T
ns
nC
ReverseRecoveryTime
J = 25°C, IF = 2.4A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
Qrr
ReverseRecoveryCharge
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 10 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7379
N-Channel
1000
100
10
1000
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
100
4.5V
4.5V
10
20µs PULSE W IDTH
20µs PULSE W IDTH
T
J
= 25°C
T
= 150°C
J
1
A
100
1
A
0.1
1
10
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
10
1
TJ = 25°C
TJ = 150°C
T
= 150°C
J
T
= 25°C
J
VDS = 15V
20µs PU LSE W ID T H
V
= 0V
G S
A
0.1
10
10 A
0.0
0.5
1.0
1.5
2.0
2.5
4
5
6
7
8
9
V
, Source-to-Drain Voltage (V)
VG S , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
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3
IRF7379
N-Channel
2.0
0.20
I
= 4.0A
D
0.16
0.12
0.08
0.04
0.00
1.5
1.0
0.5
0.0
VGS = 4.5V
VGS = 10V
V
= 10V
GS
A
-60 -40 -20
0
20
40
60
80
100 120 140 160
2
4
I
6
8
10
, Drain Current (A)
T
J
, Junction Temperature (°C)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs.Temperature
0.08
0.07
0.06
0.05
0.04
0.03
ID = 5.8A
0
4
8
12
16
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7379
N-Channel
1000
800
600
400
200
0
20
V
C
C
C
= 0V,
f = 1M Hz
I
V
= 2.4A
= 24V
GS
iss
D
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
DS
= C
= C
rss
oss
gd
ds
gd
16
12
8
C
C
iss
oss
4
C
rss
0
A
A
1
10
100
0
5
10
15
20
25
V
, Drain-to-Source Voltage (V)
Q
, Total G ate Charge (nC)
DS
G
Fig 8. Typical Capacitance Vs.
Fig 9. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7379
P-Channel
100
100
VGS
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
- 15V
- 10V
TOP
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
BOTTOM - 4.5V
10
-4.5V
10
-4.5V
20µs P ULS E W IDTH
20µs PULSE W IDTH
T
= 150°C
T
J
= 25°C
J
A
100
1
1
A
100
0.1
1
10
0.1
1
10
-V
, Drain-to-Source Voltage (V)
-V
D S
, Drain-to-Source Voltage (V)
DS
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
100
10
1
100
10
1
T
= 2 5°C
J
T
= 15 0°C
J
T
= 150°C
J
T
= 25°C
J
V
= -15 V
DS
20µs PU LS E W ID TH
V
= 0V
GS
A
0.1
10 A
4
5
6
7
8
9
0.0
0.3
0.6
0.9
1.2
1.5
-V
, G ate-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
G S
SD
Fig 13. Typical Transfer Characteristics
Fig 14. Typical Source-Drain Diode
Forward Voltage
6
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IRF7379
P-Channel
0.50
0.40
0.30
0.20
0.10
0.00
2.0
1.5
1.0
0.5
0.0
I
= -3.0A
D
VGS = -4.5V
VGS = -10V
V
= -10V
GS
A
0
2
4
6
8
10
12
14
-60 -40 -20
0
20
40
60
80
100 120 140 160
-I , Drain Current (A)
D
T
J
, Junction Tem perature (°C)
Fig 16. Typical On-Resistance Vs. Drain
Fig 15. Normalized On-Resistance
Current
Vs.Temperature
0.16
0.14
0.12
0.10
0.08
0.06
ID = -4.3A
0
4
8
12
16
-V
GS
, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
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7
IRF7379
P-Channel
1000
20
I
V
= -3.0A
= -24V
V
= 0V,
f = 1M H z
D
G S
iss
rss
oss
C
C
C
= C
+ C
+ C
,
C
S H OR TED
DS
gs
gd
ds
= C
= C
gd
ds
800
600
400
200
0
16
12
8
gd
C
C
iss
oss
4
C
rss
0
A
A
0
5
10
15
20
25
1
10
100
-
Q
, Total Gate Charge (nC)
-V
, Drain-to-Source Voltage (V)
G
D S
Fig 18. Typical Capacitance Vs.
Fig 19. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7379
Package Outline
SO8 Outline
INCHES
MILLIMETERS
DIM
D
MIN
MAX
.0688
.0098
.018
MIN
1.35
0.10
0.36
0.19
4.80
3.81
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
- A -
0.25 (.010)
M
A M
C
D
E
.0075
.189
.0098
.196
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028
8X
)
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION INCH.
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
(
.255
)
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IRF7101
DATE CO DE (YW W )
LAST DIGIT O F THE YEAR
W EEK
Y
=
W W
=
312
XXXX
INTERNATIO NAL
RECTIFIER
LOG O
F7101
W AFER
LO T CODE
PART NUM BER
TOP
(LAST
4 DIG ITS)
BO TTO M
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9
IRF7379
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
N OTES:
1. C ON TRO LLIN G DIM EN SION : M ILLIM ETER.
2. ALL DIM ENSIO N S ARE SHO W N IN M ILLIM ETER S(IN CH ES).
3. OU TLIN E C O N FOR M S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING DIMENSIO N : MILLIMETER.
2. OUTLINE CONFO RM S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
10
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