IRFB7446PBF [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | IRFB7446PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总9页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96435A
StrongIRFET
IRFB7446PbF
Applications
HEXFET® Power MOSFET
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
VDSS
40V
D
S
RDS(on) typ.
max.
2.6m
3.3m
123A
Ω
Ω
G
ID
(Silicon Limited)
120A
ID
(Package Limited)
D
Benefits
S
D
l Improved Gate, Avalanche and Dynamic dV/dt
G
Ruggedness
TO-220AB
IRFB7446PbF
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G
Gate
D
Drain
S
Source
Ordering Information
Standard Pack
Form
Tube
Base part number
Package Type
Complete Part Number
Quantity
IRFB7446PbF
TO-220
50
IRFB7446PbF
125
100
75
50
25
0
8
6
4
2
0
I
= 70A
D
T
T
= 125°C
J
J
= 25°C
25
50
75
100
125
150
175
2
4
6
8
10 12 14 16 18 20
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
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1
09/11/12
IRFB7446PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
123
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
87
A
120
492
99
PD @TC = 25°C
Maximum Power Dissipation
W
W/°C
V
0.66
Linear Derating Factor
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
Avalanche Characteristics
111
160
EAS (Thermally limited) Single Pulse Avalanche Energy
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
IAR
Avalanche Current
A
See Fig. 14, 15 , 22a, 22b
EAR
Repetitive Avalanche Energy
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
1.52
–––
62
Units
RθJC
Junction-to-Case
°C/W
Rθ
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
0.50
–––
CS
RθJA
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Symbol
V(BR)DSS
Parameter
Min.
40
Typ.
–––
0.033
2.6
Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
3.3
V
–––
–––
V/°C Reference to 25°C, ID = 5mA
Δ
Δ
V(BR)DSS/ TJ
mΩ VGS = 10V, ID = 70A
RDS(on)
3.9
–––
3.9
mΩ
V
V
GS = 6.0V, ID = 35A
Gate Threshold Voltage
2.2
–––
–––
–––
–––
–––
3.0
VDS = VGS, ID = 100μA
VGS(th)
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.6
1.0
V
DS = 40V, VGS = 0V
μA
150
100
-100
–––
VDS = 40V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
VGS = 20V
GS = -20V
IGSS
RG
nA
V
Ω
Notes:
Coss eff. (TR) is a fixed capacitance that gives the same charging
time as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.046mH,RG = 50Ω,
IAS = 70A, VGS =10V.
.
Coss while VDS is rising from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L=0.046mH, RG = 50Ω, IAS = 70A, VGS =10V.
ISD ≤ 70A, di/dt ≤ 1174A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRFB7446PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter
Min.
269
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
62
Max. Units
Conditions
VDS = 10V, ID = 70A
gfs
Forward Transconductance
–––
S
Qg
Total Gate Charge
93
ID = 70A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd
Turn-On Delay Time
Rise Time
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS =20V
nC
20
VGS = 10V
Qsync
td(on)
tr
)
42
ID = 70A, VDS =0V, VGS = 10V
VDD = 20V
11
34
ID = 30A
ns
Ω
RG = 2.7
VGS = 10V
VGS = 0V
td(off)
tf
Turn-Off Delay Time
Fall Time
33
23
Ciss
Coss
Crss
Input Capacitance
3183
475
331
596
688
Output Capacitance
Reverse Transfer Capacitance
V
DS = 25V
ƒ = 1.0 MHz, See Fig. 5
GS = 0V, VDS = 0V to 32V , See Fig. 11
VGS = 0V, VDS = 0V to 32V
pF
C
oss eff. (ER)
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
V
Coss eff. (TR)
Diode Characteristics
Symbol Parameter
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
–––
120
(Body Diode)
showing the
integral reverse
A
G
ISM
VSD
Pulsed Source Current
–––
–––
492
(Body Diode)
Diode Forward Voltage
p-n junction diode.
TJ = 25°C, IS = 70A, VGS = 0V
–––
–––
–––
–––
–––
–––
–––
0.9
7.6
22
24
15
15
1.0
1.3
–––
–––
–––
–––
–––
–––
V
dv/dt
trr
Peak Diode Recovery
V/ns TJ = 175°C, IS = 70A, VDS = 40V
Reverse Recovery Time
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
ns
IF = 70A
di/dt = 100A/μs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
IRRM
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3
IRFB7446PbF
1000
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
1
BOTTOM
BOTTOM
4.5V
4.5V
60μs
Tj = 25°C
PULSE WIDTH
60μs
Tj = 175°C
≤
PULSE WIDTH
≤
0.1
0.1
1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
100
10
2.2
1.8
1.4
1.0
0.6
I
= 70A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 10V
DS
≤60μs PULSE WIDTH
0.1
2
4
6
8
10
-60
-20
20
60
100
140
180
T
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I = 70A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
rss
oss
gd
V
V
= 32V
= 20V
DS
DS
= C + C
ds
gd
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
100
0
10 20 30 40 50 60 70 80
0.1
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
4
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IRFB7446PbF
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100μsec
1msec
DC
T
= 25°C
J
Package Limited
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
49
48
47
46
45
44
43
42
41
40
Id = 5.0mA
V
= 0V to 32V
DS
0
5
10 15 20 25 30 35 40 45
-60
-20
20
60
100
140
180
T , Temperature ( °C )
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical COSS Stored Energy
20.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
15.0
10.0
5.0
0.0
0
100
200
300
400
500
I
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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5
IRFB7446PbF
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart = 25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
120
80
40
0
TOP
BOTTOM 1.0% Duty Cycle
= 70A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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IRFB7446PbF
4.5
3.5
2.5
1.5
0.5
6
5
4
3
2
1
0
I = 46A
F
V
= 34V
R
T = 25°C
J
T = 125°C
J
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
-75
-25
25
75
125
175
225
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/μs)
J
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
5
70
60
50
40
30
20
10
0
I = 70A
F
I = 46A
F
V
= 34V
V
= 34V
R
R
4
3
2
1
0
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
60
I = 70A
F
V
= 34V
R
50
40
30
20
10
0
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
IRFB7446PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
VGS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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IRFB7446PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMBER
LOT CODE 1789
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 0 = 2000
WE EK 19
Note: "P" in assembly line position
indicates "Lead - Free"
AS S E MBL Y
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information†
Industrial††
(per JEDEC JESD47F††† guidelines)
Qualification level
N/A
(per JE DE C J-S TD-020D†††
Moisture Sensitivity Level
RoHS compliant
TO-220AB
)
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
9/11/2012
Comment
Added Package limit on pg1,2 and updated Fig2 , Fig10
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2012
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9
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