IRFB7734 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFB7734 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总13页 (文件大小：656K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFB7734PbF
IRFS7734PbF
IRFSL7734PbF
HEXFET® Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
RDS(on) typ.
max
75V
2.8m
3.5m
183A
ID
D
D
S
Benefits
S
S
D
G
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
D
G
G
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
50
IRFB7734PbF
IRFSL7734PbF
IRFS7734PbF
TO-220
TO-262
D2-Pak
Tube
IRFB7734PbF
IRFSL7734PbF
IRFS7734PbF
Tube
50
Tube
50
Tape and Reel Left
800
IRFS7734TRLPbF
200
160
120
80
10
8
I
= 100A
D
T
= 125°C
= 25°C
J
6
4
40
T
J
0
2
25
50
75
100
125
150
175
4
6
8
10 12 14 16 18 20
T
, Case Temperature (°C)
C
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFB/S/SL7734PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
183
Units
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
130
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
650
290
2.0
PD @TC = 25°C
W
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
Symbol
EAS (Thermally limited)
EAS (Thermally limited)
IAR
Max.
350
670
Units
mJ
Parameter
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Avalanche Current
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.50
–––
–––
Max.
0.51
–––
62
Units
Junction-to-Case
RJC
RCS
RJA
RJA
Case-to-Sink, Flat Greased Surface (TO-220)
Junction-to-Ambient (TO-220)
°C/W
Junction-to-Ambient (PCB Mount) (D2Pak)
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
75
––– –––
V
VGS = 0V, ID = 250µA
–––
–––
–––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
50
2.8
3.5
––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
RDS(on)
3.5
–––
3.7
1.0
VGS = 10V, ID = 100A
m
V
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 250µA
VGS(th)
IDSS
Gate Threshold Voltage
V
V
V
V
DS =75 V, VGS = 0V
DS =75V,VGS = 0V,TJ =125°C
GS = 20V
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
IGSS
RG
nA
GS = -20V
–––
2.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 70µH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 950A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFB/S/SL7734PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
250
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
VDS = 10V, ID =100A
ID = 100A
–––
180
45
–––
270
–––
–––
–––
–––
–––
S
Qg
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
VDS = 38V
nC
Qgd
55
VGS = 10V
Qsync
td(on)
tr
125
20
VDD = 38V
ID = 100A
Rise Time
123
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
124
100
–––
–––
RG= 2.7
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 10150 –––
VGS = 0V
–––
–––
816
500
–––
–––
VDS = 25V
ƒ = 1.0MHz
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
707
916
–––
–––
VGS = 0V, VDS = 0V to 60V
VGS = 0V, VDS = 0V to 60V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
–––
–––
183
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
ISM
–––
–––
–––
–––
650
1.2
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 100A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
5.1
47
51
76
96
2.8
––– V/ns TJ = 175°C,IS =100A,VDS = 64V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 64V
IF = 100A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
TJ = 25°C
IRRM
3
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IRFB/S/SL7734PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
1000
100
10
2.4
2.0
1.6
1.2
0.8
0.4
I
= 100A
D
V
= 10V
GS
T = 175°C
J
T = 25°C
J
1
V
= 25V
DS
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20 0 20 40 60 80 100120140160180
V
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
f = 1 MHZ
GS
I = 100A
D
C
C
C
= C + C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
V
V
V
= 60V
DS
= 38V
DS
= 15V
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
100
0
50
100
150
200
250
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRFB/S/SL7734PbF
1000
100
10
100µsec
1msec
100
10
1
T = 175°C
J
OPERATION
IN THIS
AREA
LIMITED BY
R
(on)
DS
10msec
T = 25°C
J
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
V
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
2.0
95
Id = 1.0mA
1.5
1.0
0.5
0.0
90
85
80
75
-10
0
10 20 30 40 50 60 70 80
-60 -40 -20
0
20 40 60 80 100120140160180
, Temperature ( °C )
T
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
3.6
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
3.4
3.2
3.0
2.8
0
20 40 60 80 100 120 140 160 180 200
, Drain Current (A)
I
D
Fig 13. Typical On-Resistance vs. Drain Current
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IRFB/S/SL7734PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Avalanche Current vs. Pulse Width
400
300
200
100
0
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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IRFB/S/SL7734PbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
15
10
5
I
= 60A
= 64V
F
V
R
T = 25°C
J
T = 125°C
J
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
I
D
I
D
I
D
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/µs)
J
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
400
300
200
100
0
20
15
10
5
I
= 60A
= 64V
I
= 100A
= 64V
F
F
V
V
R
R
T = 25°C
J
T = 125°C
J
T = 25°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
400
I
= 100A
= 64V
F
V
R
T = 25°C
J
T = 125°C
J
300
200
100
0
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFB/S/SL7734PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFB/S/SL7734PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H A S S E M B L Y L IN
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO
R E C T IF IE R
L O
N A L
O
N
W
W
1 9 , 2 0 0 0
"C "
G
O
E
E
Y E A R
E E K 1 9
L IN
0
=
2 0 0 0
N
o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
L O C O D E
W
-
T
E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB/S/SL7734PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW19, 1997
RECTIFIER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WEEK 19
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFB/S/SL7734PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFB/S/SL7734PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
TO-220
D2Pak
N/A
MSL1
N/A
Moisture Sensitivity Level
RoHS Compliant
TO-262
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Updated EAS (L =1mH) = 670mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V”. on page 2
Updated package outline on page 9,10,11.
11/5/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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