IRFS59N10DTRLP [INFINEON]
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3;型号: | IRFS59N10DTRLP |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 开关 脉冲 晶体管 |
文件: | 总11页 (文件大小:138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFS59N10DTRR
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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2
INFINEON
IRFS59N10DTRRP
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2
INFINEON
IRFS610A
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TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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0
FAIRCHILD
IRFS614B_FP001
Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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0
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1
SAMSUNG
IRFS620A
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.1A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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ETC
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1
SAMSUNG
IRFS622
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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3
SAMSUNG
IRFS624
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1
SAMSUNG
IRFS624A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.4A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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16
ETC
IRFS624B
250V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 162
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14
FAIRCHILD
IRFS625
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1
SAMSUNG
IRFS630
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2
SAMSUNG
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499
FAIRCHILD
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