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IRFS59N10DTRR [INFINEON]

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3;
IRFS59N10DTRR
型号: IRFS59N10DTRR
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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IRFS59N10DTRRP

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0 FAIRCHILD

IRFS620

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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1 SAMSUNG

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12 ETC

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3 SAMSUNG

IRFS624

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IRFS624A

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