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IRHF593110PBF [INFINEON]

Power Field-Effect Transistor, 2.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN;
IRHF593110PBF
型号： IRHF593110PBF
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 2.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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