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IRHF9130 [IRF]

TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A); 晶体管P沟道（ BVDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -6.5A ）
IRHF9130
元器件型号： IRHF9130
生产厂家： INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用：

TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
晶体管P沟道（ BVDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -6.5A ）

晶体 晶体管
PDF文件： 总8页 (文件大小：128K)
下载文档：  下载PDF数据表文档文件
型号参数：IRHF9130参数
 查看货源

IRHF9230

 -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package

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40 ETC

IRHF9230

 RADIATION HARDENED POWER MOSFET

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34 IRF

IRHF9230PBF

 暂无描述

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0 IRF

IRHF9230SCS

 Power Field-Effect Transistor, 4A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN

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0 IRF

IRHF93130

 TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

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18 IRF

IRHF93130PBF

 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN

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0 IRF

IRHF93230

 RADIATION HARDENED POWER MOSFET

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-
18 IRF

IRHF93230

 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package

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-
18 ETC

IRHG110

 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP

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-
11 ETC

IRHG3110

 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)

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19 IRF

IRHG3110

 Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PIN

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0 INFINEON

IRHG3214

 RADIATION HARDENED POWER MOSFET THRU-HOLE

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6 IRF

IRHG3214

 RADIATION HARDENED POWER MOSFET THRU-HOLE

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10 IRF

IRHG3214PBF

 Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB

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0 IRF

IRHG3214PBF

 Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB

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-
0 IRF
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