IRHF93130
更新时间：2024-09-18 01:40:17
品牌：INFINEON
描述：TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
概述
规格参数
数据手册
替代型号IRHF93130 概述
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) 晶体管P沟道（ BVDSS = -100V ， RDS（ON） = 0.30ohm ，ID = -6.5A ） 功率场效应晶体管
IRHF93130 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Active |
| Reach Compliance Code： | not_compliant | ECCN代码： | EAR99 |
| 风险等级： | 5.27 | 其他特性： | HIGH RELIABILITY |
| 雪崩能效等级（Eas）： | 165 mJ | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 100 V | 最大漏极电流 (Abs) (ID)： | 6.5 A |
| 最大漏极电流 (ID)： | 6.5 A | 最大漏源导通电阻： | 0.35 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码： | TO-205AF |
| JESD-30 代码： | O-CBCY-W3 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | CERAMIC, METAL-SEALED COFIRED | 封装形状： | ROUND |
| 封装形式： | CYLINDRICAL | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | P-CHANNEL | 最大功率耗散 (Abs)： | 25 W |
| 最大脉冲漏极电流 (IDM)： | 26 A | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | NO |
| 端子面层： | Tin/Lead (Sn/Pb) | 端子形式： | WIRE |
| 端子位置： | BOTTOM | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
IRHF93130 数据手册
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PDF下载PD - 90882F
IRHF9130
JANSR2N7389
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHF9130
100K Rads (Si)
0.30Ω
0.30Ω
-6.5A
JANSR2N7389
IRHF93130 300K Rads (Si)
-6.5A
JANSF2N7389
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for bothTotal Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-39
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
LowTotal Gate Charge
ProtonTolerant
SimpleDriveRequirements
EaseofParalleling
Hermetically Sealed
Ceramic Package
LightWeight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= -12V, T = 25°C Continuous Drain Current
-6.5
-4.1
D
D
GS
GS
C
A
I
= -12V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
-26
DM
@ T = 25°C
P
D
25
W
W/°C
V
C
Linear Derating Factor
0.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
165
mJ
A
AS
I
-6.5
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
-22
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
For footnotes refer to the last page
www.irf.com
1
2/18/03
IRHF9130
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-100
—
—
—
—
V
V
= 0V, I =-1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.112
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.30
0.35
-4.0
—
V
= -12V, I = -4.1A➀
DS(on)
GS D
Ω
V
= -12V, I = -6.5A➀
D
GS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
2.5
—
V
V
V
= V , I = -1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
>-15V, I
= -4.1A ➀
DS
V
DS
I
-25
= -80V ,V =0V
DS GS
DSS
µA
—
-250
V
= -80V,
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
45
V
= -20V
GSS
GS
nA
nC
I
V
= 20V
GSS
GS
Q
Q
Q
V
=-12V, I = -6.5A
D
g
gs
gd
d(on)
r
GS
10
V
DS
= -50V
25
t
t
t
t
30
V
= -50V, I = -6.5A,
DD
GS
D
50
V
=-12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
70
d(off)
70
—
f
L
+ L
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S
D
nH
C
C
C
Input Capacitance
—
—
—
1200
290
76
—
—
—
V
= 0V, V
= -25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
-6.5
-26
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
250
V
T = 25°C, I = -6.5A, V
= 0V ➀
j
SD
S
GS
nS
T = 25°C, I = -6.5A, di/dt ≤ -100A/µs
j
rr
F
V
Q
0.74 µC
≤ -50V ➀
DD
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
5.0
175
thJC
thJA
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHF9130
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀
Parameter
Min
Drain-to-Source Breakdown Voltage -100
100KRads(Si)1
300K Rads (Si)2
Units
Test Conditions
Max
Min
Max
BV
—
-4.0
-100
100
-25
-100
-2.0
—
—
V = 0V, I = -1.0mA
GS D
DSS
V
V
Gate Threshold Voltage
-2.0
—
-5.0
-100
100
-25
V
= V , I = -1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
V
= -20V
= 20 V
GSS
GS
nA
I
—
—
V
GS
GSS
I
—
—
µA
V
=-80V, V =0V
GS
= -12V, I =-4.1A
D
DSS
DS
GS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
➀
—
0.30
—
0.30
Ω
V
R
DS(on)
➀
—
—
0.30
-3.0
—
—
0.30
-3.0
Ω
V
GS
= -12V, I =-4.1A
D
V
SD
➀
V
V = 0V, I = -6.5A
GS S
1. Part number IRHF9130 (JANSR2N7389)
2. Part number IRHF93130 (JANSF2N7389)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
VDS(V)
LET
MeV/(mg/cm²))
Energy Range
Ion
(MeV)
(µm)
@VGS=0V
-100
@VGS=5V @VGS=10V @VGS=15V @VGS=20V
Cu
Br
I
28
285
305
345
43
39
-100
-100
—
-100
-70
—
-70
-50
—
-60
-40
—
36.8
59.9
-100
32.8
-60
-120
-100
-80
-60
-40
-20
0
Cu
Br
I
0
5
10
VGS
15
20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHF9130
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
100
10
1
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
TOP
TOP
BOTTOM -5.0V
BOTTOM -5.0V
10
-5.0V
-5.0V
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
°
J
°
T = 150 C
1
J
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig1. TypicalOutputCharacteristics
Fig2. TypicalOutputCharacteristics
2.5
100
10
1
-6.5A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
°
T = 150 C
J
V
= -50V
DS
20µs PULSE WIDTH
V
GS
=-12V
5
6
7
8
9
10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig3. TypicalTransferCharacteristics
Fig4. NormalizedOn-Resistance
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHF9130
20
16
12
8
2000
V
= 0V,
f = 1MHz
C
I = -6.5
D
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
=-80V
=-50V
=-20V
C
= C
gd
DS
DS
DS
rss
C
= C + C
oss
ds
1500
1000
500
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig6. TypicalGateChargeVs.
Fig5. TypicalCapacitanceVs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
J
°
T = 150 C
V
= 0 V
10ms
100
GS
Single Pulse
0.1
0.2
1.0
1.8
2.6
3.4
4.2
1
10
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig8. MaximumSafeOperatingArea
Fig7. TypicalSource-DrainDiode
ForwardVoltage
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5
IRHF9130
Pre-Irradiation
RD
7.0
6.0
5.0
4.0
3.0
2.0
1.0
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig10a. SwitchingTimeTestCircuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
V
DS
Fig9. MaximumDrainCurrentVs.
CaseTemperature
Fig10b. SwitchingTimeWaveforms
10
0.50
0.20
0.10
0.05
1
0.02
0.01
P
DM
0.1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHF9130
L
V
D S
400
300
200
100
0
I
D
TOP
-2.9A
-4.1A
D .U .T
R
G
V
D D
A
BOTTOM -6.5A
I
A S
D R IV E R
-
VGS
0.01
Ω
t
p
15V
Fig12a. UnclampedInductiveTestCircuit
I
AS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig12c. MaximumAvalancheEnergy
Vs.DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-12V
.3µF
-12V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig13b. GateChargeTestCircuit
Fig13a. BasicGateChargeWaveform
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7
IRHF9130
Pre-Irradiation
Foot Notes:
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
-12 volt V
applied and V
➀ V
= -25V, starting T = 25°C, L=7.8mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DS
DD
Peak I = -6.5A, V
=-12V
L
GS
➀ I
V
≤ -6.5A, di/dt ≤ -430A/µs,
➀ Total Dose Irradiation with V Bias.
SD
DS
= 0 during
≤ -100V, T ≤ 150°C
-80 volt V
applied and V
DD
J
DS
irradiation per MlL-STD-750, method 1019, condition A.
GS
Case Outline and Dimensions —TO-205AF(ModifiedTO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
8
www.irf.com
IRHF93130 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| IRHF9130 | INFINEON | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) | 功能相似 |
|
| IRHF93130PBF | INFINEON | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me | 功能相似 |
|
IRHF93130 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRHF93130PBF | INFINEON | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | 获取价格 |
|
| IRHF93230 | INFINEON | RADIATION HARDENED POWER MOSFET | 获取价格 |
|
| IRHG110 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 950MA I(D) | DIP | 获取价格 |
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| IRHG3110 | INFINEON | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | 获取价格 |
|
| IRHG3214 | INFINEON | RADIATION HARDENED POWER MOSFET THRU-HOLE | 获取价格 |
|
| IRHG3214PBF | INFINEON | Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | 获取价格 |
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| IRHG4110 | INFINEON | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB) | 获取价格 |
|
| IRHG4110PBF | INFINEON | Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, MO-036AB, 14 PIN | 获取价格 |
|
| IRHG4214 | INFINEON | RADIATION HARDENED POWER MOSFET THRU-HOLE | 获取价格 |
|
| IRHG4214PBF | INFINEON | Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | 获取价格 |
|
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