IRLU2908 [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRLU2908 |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总11页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94501
IRLR2908
AUTOMOTIVE MOSFET
IRLU2908
HEXFET® Power MOSFET
Features
D
l
l
l
l
l
l
Advanced Process Technology
VDSS = 80V
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
RDS(on) = 28mΩ
G
Repetitive Avalanche Allowed up to Tjmax
ID = 30A
S
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersilicon
area.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperating
temperature, low RθJC, fast switching speed and improved repetitive avalanche rating.
Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledevicefor
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
solderingtechniques. Thestraightleadversion(IRFUseries)isforthrough-holemounting
applications. Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemount
applications.
I-Pak
IRLU2908
D-Pak
IRLR2908
Absolute Maximum Ratings
Parameter
Max.
39
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
I
I
I
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
A
D
D
D
Continuous Drain Current, VGS @ 10V (See Fig. 9)
28
(Package Limited)
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
150
120
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
0.77
± 16
W/°C
V
V
GS
EAS
180
250
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
E
AS (tested)
Avalanche Current
IAR
EAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
mJ
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
2.3
V/ns
°C
T
J
-55 to + 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.3
Units
RθJC
RθJA
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient (PCB Mount)
40
Junction-to-Ambient
110
www.irf.com
1
02/13/03
IRLR2908/IRLU2908
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
80 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.0
22.5
25
28
30
V
GS = 10V, ID = 23A
GS = 4.5V, ID = 20A
mΩ
V
VGS(th)
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
22
2.5
–––
20
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 23A
gfs
Forward Transconductance
Drain-to-Source Leakage Current
35
IDSS
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
V
DS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
GS = 16V
VGS = -16V
250
200
-200
33
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
V
Qg
Qgs
Qgd
td(on)
tr
nC ID = 23A
VDS = 64V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
6.0
11
9.1
17
V
GS = 4.5V
DD = 40V
12
–––
–––
–––
–––
–––
ns
V
Rise Time
95
ID = 23A
G = 8.3Ω
VGS = 4.5V
td(off)
tf
Turn-Off Delay Time
36
R
Fall Time
55
LD
D
Internal Drain Inductance
4.5
nH Between lead,
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
S
and center of die contact
GS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
––– 1890 –––
pF
V
Coss
Crss
Coss
Coss
Output Capacitance
–––
–––
260
35
–––
–––
V
Reverse Transfer Capacitance
Output Capacitance
––– 1920 –––
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 64V, ƒ = 1.0MHz
Output Capacitance
–––
–––
170
310
–––
–––
V
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 64V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
D
Continuous Source Current
–––
–––
39
MOSFET symbol
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
150
integral reverse
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
75
1.3
110
310
V
T = 25°C, I = 23A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 23A, VDD = 25V
J F
Qrr
ton
di/dt = 100A/µs
210
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes through are on page 11
HEXFET® is a registered trademark of International Rectifier.
2
www.irf.com
IRLR2908/IRLU2908
1000
1000
100
10
VGS
15V
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
VGS
15V
TOP
TOP
10V
4.5V
4.0V
3.5V
3.0V
2.7V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
2.5V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
60
T
= 25°C
J
50
40
30
20
10
0
100
10
1
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
VDS = 10V
20µs PULSE WIDTH
20µs PULSE WIDTH
2
3
4 5
0
10
20
30
40
50
60
V
, Gate-to-Source Voltage (V)
GS
I , Drain-to-Source Current (A)
D
Fig 4. Typical Forward Transconductance
Fig 3. Typical Transfer Characteristics
vs. Drain Current
www.irf.com
3
IRLR2908/IRLU2908
5.0
4.0
3.0
2.0
1.0
0.0
100000
V
= 0V,
f = 1 MHZ
GS
I
= 23A
D
C
= C + C , C SHORTED
V
V
V
= 64V
= 40V
= 16V
iss
gs gd ds
DS
DS
DS
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
C
C
iss
oss
rss
C
10
0
5
10
15
20
25
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
V
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 175°C
V
= 0V
Single Pulse
GS
0.1
0.10
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRLR2908/IRLU2908
40
35
30
25
20
15
10
5
3.0
I
= 38A
D
V
= 4.5V
GS
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
, Junction Temperature (°C)
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Normalized On-Resistance
Case Temperature
vs. Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.05
0.02
0.01
P
DM
t
1
t
SINGLE PULSE
2
Notes:
( THERMAL RESPONSE )
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRLR2908/IRLU2908
400
300
200
100
0
15V
I
D
TOP
9.3A
16A
BOTTOM 23A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.5
2.0
1.5
1.0
0.5
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
I
= 250µA
D
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
3mA
T
J
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRLR2908/IRLU2908
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
assuming
Tj = 25°C due to
∆
avalanche losses
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
tav (sec)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 23A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
vs. Temperature
www.irf.com
7
IRLR2908/IRLU2908
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
www.irf.com
IRLR2908/IRLU2908
TO-252AA (D-Pak) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
5.46 (.215)
0.58 (.023)
0.46 (.018)
0.88 (.035)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
1.02 (.040)
1.64 (.025)
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
0.51 (.020)
MIN.
- B -
3 - SOURCE
4 - DRAIN
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M A M B
NOTES:
2.28 (.090)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
4.57 (.180)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
TO-252AA (D-Pak) Part Marking Information
Notes: This part marking information applies to devices producedbefore02/26/2001
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 9U1P
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR = 0
IRFU120
016
1P
WE EK = 16
9U
AS S E MB L Y
LOT CODE
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
34
12
LINE A
ASSEMBLY
LOT CODE
www.irf.com
9
IRLR2908/IRLU2908
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
- A -
0.58 (.023)
0.46 (.018)
1.27 (.050)
5.46 (.215)
0.88 (.035)
5.21 (.205)
LEAD ASSIGNMENTS
1 - GATE
4
2 - DRAIN
6.45 (.245)
5.68 (.224)
3 - SOURCE
4 - DRAIN
6.22 (.245)
5.97 (.235)
1.52 (.060)
1.15 (.045)
1
2
3
- B -
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
2.28 (.090)
1.91 (.075)
9.65 (.380)
8.89 (.350)
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
1.14 (.045)
0.76 (.030)
1.14 (.045)
0.89 (.035)
3X
0.89 (.035)
0.64 (.025)
3X
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
2.28 (.090)
2X
I-Pak (TO-251AA) Part Marking Information
Notes: This part marking information applies todevices producedbefore02/26/2001
EXAMPLE: THIS IS AN IRFR120
INTERNATIONAL
DATE CODE
YEAR = 0
WITH ASSEMBLY
LOT CODE 9U1P
RECTIFIER
LOGO
IRFU120
016
1P
WEEK = 16
9U
AS S E MBL Y
LOT CODE
Notes: This part marking information applies to devices produced after 02/26/2001
PART NUMBER
EXAMPLE: THIS IS AN IRFR120
WIT H AS S E MB LY
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEE K 19
IRFU120
919A
78
LOT CODE 5678
ASSEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB L Y
LOT CODE
10
www.irf.com
IRLR2908/IRLU2908
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.71mH, RG = 25Ω, IAS = 23A, VGS =10V. Part not recommended for use above
this value.
ISD ≤ 23A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
.
This value determined from sample failure population. 100% tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/03
www.irf.com
11
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