RT2A00AM1E [ISAHAYA]

Transistor;


型号：	RT2A00AM1E
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	Transistor
文件：	总4页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RT2A00AM1

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

OUTLINE DRAWING

Unit:mm

DESCRIPTION

2.1

RT2A00M is a composite transistor built with two 2SA1602A chips in

SC-88 package.

1.25

①

⑤

④

FEATURE

●Silicon pnp epitaxial type

Each transistor elements are independent.

●Mini package for easy mounting

②

③

APPLICATION

For low frequency amplify application

⑤

④

TERMINAL CONNECTOR

①：BASE１

②：EMITTER（COMMON）

③：BASE２

Tr1

Tr2

④：COLLECTOR２

⑤：COLLECTOR１

JEITA：－

JEDEC：－

①

②

③

MAXIMUM RATINGS （Ta=25℃）（Tr1、Tr2）

Symbol

V_CBO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

-60

Unit

MARKING

⑤

④

V_EBO

V_CEO

I _C

-6

-50

-200

℃

P_C

Collector dissipation（Total Ta=25℃）

Junction temperature

150

TYPE NAME

hFE ITEM

T_j

＋125

-55～＋125

①

② ③

T_stg

Storage temperature

ISAHAYA ELECTRONICS CORPORATION

RT2A00AM1

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

ELECTRICAL CHARACTERISTICS （Ta=25℃）（Tr1、Tr2）

Limits

Symbol

Parameter

Test conditions

Unit

Min

-50

Typ

Max

V_(BR)CEO

I_CBO

Collector to Emitter break down voltage

Collector cut off current

Emitter cut off current

I _C=-100μA，R_BE=∞

μA

V_CB=-60V，I _E=0mA

-0.1

500

I_EBO

V_EB=-6V，I C=0mA

h_FE

DC forward current gain

VCE=-6V，IC=-1mA

150

DC forward current gain

VCE=-6V，IC=-0.1mA

V_CE(sat)

f_T

Collector to Emitter saturation voltage

Gain band width product

Collector output capacitance

Noise figure

IC=-100mA，I _B=-10mA

VCE=-6V，IE=10mA

-0.3

200

4.0

MHz

Cob

VCB=-6V，IE=0mA，f=1MHz

V_CE=-6V，I _E=0.3mA，f=100Hz，RG=10kΩ

* : It shows h_FEclassification in right table.

ITEM

hFE

150～300 250～500

･ME ･MF

MARKING

ISAHAYA ELECTRONICS CORPORATION

RT2A00AM1

COMPOSITE TRANSISTOR

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

DCFO_直RW_流A_電RD_流C_増U_幅RR_率EN_-T GAIN

VS. COLLECTOR CURRENT

コレクタ電流特性

COMMON EMITTER TRANSFER

エミッタ接地伝達特性

1000

100

-50

VCE=-6V

-40

-30

-20

-10

-0

-0.1

-1

-10

-100

-1000

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

COLLコEレCクTOタR電C流URICR[EmNAT]IC (mA)

BASETO EMITTER VOLTAGEVBE(V)

ベース・エミッタ間電圧 VBE[V]

GAIN BAND WIDTH PRODUCT

利得帯域幅積－エミッタ電流特性

VS. EMITTER CURRENT

COLLECTOR OUTPUT CAPACITANCE

コレクタ出力容量－

VS.COLLECTOR TO BASE VOLTAGE

コレクタ・ベース間電圧

400

300

200

100

VCE=-6V

0.1

100

-0.1

-1

-10

-100

エミッタ電流 IE[mA]

EMITTER CURRENTIE (mA)

コレクタ・ベース間電圧 VCB[V]

COLLECTOR TO BASE VOLTAGE VCE (V)

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

·A^orlⁱl^giⁱnⁿf^ao^trⁱm^ngatⁱⁿion^theco^un^st^eain^oe^fd^anin^{y p}th^roes^de^ucm^{t d}a^ate^tari^,a^dlsⁱ,^agin^rc^al^mud^si^,n^cg^hp^ar^ro^tsd^ou^rct^cid^rca^uta^it,^ad^pia^pg^licra^am^tiosⁿa^en^xd^amch^pa^lert^ss,^cr^oeⁿp^tareⁱⁿs^ee^dntⁱⁿin^tf^ho^erm^seat^mio^an^teo^rn^ialp^sr^.oducts

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

June.2008

RT2A00AM1E [ISAHAYA]

相关型号：

RT2A00AM1F

RT2A00M

RT2A00ME

RT2A00MF

RT2C00M

RT2N03M

RT2N04M

RT2N05M

RT2N07M

RT2N08M

RT2N09M

RT2N12M