2SD1772A [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD1772A
型号: 2SD1772A
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1772 2SD1772A  
DESCRIPTION  
·
·With TO-220Fa package  
·Complement to type 2SB1192/1192A  
·Large collector power dissipation  
APPLICATIONS  
·For power amplification  
·For TV vertical deflection output  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-220Fa) and symbol  
3
ABSOLUTE MAXIMUM RATINGS AT Ta=25  
SYMBOL  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
VCBO  
200  
V
2SD1772  
150  
VCEO  
Collector-emitter voltage  
Open base  
V
2SD1772A  
180  
VEBO  
IC  
Emitter-base voltage  
Collector current (DC)  
Collector current-peak  
Open collector  
6
V
A
A
1
ICM  
2
25  
TC=25  
Ta=25℃  
PC  
Collector power dissipation  
w
2
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1772 2SD1772A  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
150  
180  
6
TYP.  
MAX  
UNIT  
2SD1772  
Collector-emitter  
breakdown voltage  
V(BR)CEO  
IC=5mA , IB=0  
V
2SD1772A  
V(BR)EBO  
VCEsat  
VBE  
Emitter-base breakdown voltage  
IE=0.5mA , IC=0  
V
V
Collector-emitter saturation voltage IC=500mA ;IB=50mA  
1.0  
1.0  
50  
Base-emitter on voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=300mA ; VCE=10V  
VCB=200V; IE=0  
V
ICBO  
μA  
μA  
IEBO  
VEB=4V; IC=0  
50  
hFE-1  
hFE-2  
COB  
IC=100mA ; VCE=10V  
IC=300mA ; VCE=10V  
IE=0 ; VCB=10V;f=1MHz  
IC=100mA ; VCE=10V;f=1MHz  
60  
50  
240  
DC current gain  
Output capacitance  
Transition frequency  
27  
20  
pF  
fT  
MHz  
‹ hFE-1 Classifications  
Q
P
60-140  
100-240  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1772 2SD1772A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1772 2SD1772A  
4

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