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MJ11016 [ISC]

isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
MJ11016
型号： MJ11016
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon NPN Darlington Power Transistor
ISC的硅NPN达林顿功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：52K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
MJ11016  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 120V(Min.)  
·High DC Current Gain-  
: hFE= 1000(Min.)@IC= 20A  
·Low Collector Saturation Voltage-  
: VCE (sat)= 3.0V(Max.)@ IC= 20A  
·Complement to Type MJ11015  
APPLICATIONS  
·Designed for use as output devices in complementary  
general purpose amplifier applications.  
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
120  
120  
V
5
30  
V
Collector Current-Continunous  
Base Current-Continunous  
A
IB  
1
A
Collector Power Dissipation  
@TC=25℃  
PC  
200  
W
℃
℃
Tj  
Junction Temperature  
200  
Tstg  
Storage Temperature Range  
-55~+200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
0.87  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Darlington Power Transistor  
MJ11016  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
V(BR)CEO  
Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0  
120  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Cutoff Current  
IC= 20A; IB= 0.2A  
IC= 30A; IB= 0.3A  
IC= 20A; IB= 0.2A  
IC= 30A; IB= 0.3A  
3.0  
4.0  
3.5  
5.0  
V
VCE  
(sat)-1  
V
V CE  
(sat)-2  
(sat)-1  
(sat)-2  
V
VBE  
VBE  
V
VCE=120V; RBE=1kΩ  
VCE=120V; RBE=1kΩ; TC=150℃  
1.0  
5.0  
ICER  
mA  
mA  
mA  
ICEO  
Collector Cutoff Current  
VCE= 50V; IB= 0  
VEB= 5V; IC= 0  
1.0  
5.0  
IEBO  
Emitter Cutoff Current  
hFE-1  
DC Current Gain  
IC= 20A, VCE= 5V  
IC= 30A, VCE= 5V  
1000  
200  
hFE-2  
DC Current Gain  
isc Website：www.iscsemi.cn  

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