MCT66G [ISOCOM]
Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-8;
| 型号： | MCT66G |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-8 输出元件 光电 |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCT6, MCT61, MCT62, MCT66
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
Dimensions in mm
2.54
l
UL recognised, File No. E91231
1
2
3
4
8
7
'X' SPECIFICATION APPROVALS
l
MCT6 -
7.0
6.0
VDE 0884 in 3 available lead form : -
6
5
- STD
- G form
- SMD approved to CECC 00802
1.2
3.0
10.16
9.16
7.62
4.0
3.0
MCT61, MCT62, MCT66 -
VDE 0884 approval pending
13°
Max
0.5
l
EN60950 approval pending
0.26
3.35
0.5
DESCRIPTION
The MCT6, MCT61, MCT62 & MCT66 series
of optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages mounted two channels per unit.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
Lead Soldering Temperature
-55°C to + 125°C
-55°C to + 100°C
FEATURES
l
Options :-
(1/16 inch (1.6mm) from case for 10 secs) 260°C
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kVRMS ,7.5kVPK
INPUT DIODE
l
)
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
APPLICATIONS
l
l
l
l
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
30V
6V
150mW
POWER DISSIPATION
OPTION G
OPTION SM
SURFACEMOUNT
7.62
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
0.6
0.1
1.25
0.75
0.26
10.46
9.86
10.16
ISOCOM INC
1024 S.GreenvilleAve,Suite240,
Allen, TX75002 USA
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
http://www.isocom.com
7/12/00
DB92012m-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.50
10
V
V
µA
IF = 20mA
IR = 10µA
VR = 3V
3
Output
Collector-emitter Breakdown (BVCEO
)
30
6
V
V
I = 1mA (note 2)
Emitter-collector Breakdown (BVECO
)
IEC = 100µA
Collector-emitter Dark Current (ICEO
)
100 nA
VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
MCT6
MCT61
MCT62
20
50
100
%
%
%
10mA IF , 10V VCE
5mA I , 5V VCE
5mA IFF , 5V V
CE
MCT66
6
%
10mA IF , 10V VCE
Collector-emitter Saturation Voltage VCESAT
MCT6,61,62
0.4
0.4
V
V
VRMS
VPK
Ω
16mA IF , 2mA IC
40mA IF , 2mA IC
See note 1
MCT66
Input to Output Isolation Voltage VISO
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance RISO 5x1010
Output Rise Time, Fall Time tr , tf
5300
7500
See note 1
VIO = 500V (note 1)
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 1)
IC = 2mA, VCC = 10V,
RL = 1kΩ (Fig. 2)
2.4
15
µs
Output Rise Time, Fall Time tr , tf
µs
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
INPUT
VCC = 10V
VCC = 10V
toff
ton
RL = 100Ω
RL = 1kΩ
tr
tf
OUTPUT
OUTPUT
OUTPUT
10%
90%
10%
90%
FIG 1
FIG 2
7/12/00
DB92012m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
200
TA = 25°C
50
40
30
20
150
100
50
30
20
15
10
50
0
10
0
IF = 5mA
0
2
4
6
8
10
-30
0
25
50
75
100 125
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
60
50
1.4
1.2
40
30
1.0
0.8
0.6
0.4
0.2
0
20
10
0
V
= 10V
TACE= 25°C
-30
0
25
50
75
100 125
1
2
5
10
20
50
Forward current IF (mA)
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Ambient Temperature
0.28
1.5
1.0
0.24
0.20
IF = 10mA
VCE = 10V
I = 16mA
IFC = 2mA
0.16
0.12
0.08
0.5
0
0.04
0
-30
0
25
50
75
100
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
DB92012m-AAS/A1
7/12/00
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