IS31LT3117-ZLS4 [ISSI]
LED Driver;
| 型号： | IS31LT3117-ZLS4 |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | LED Driver 驱动 光电二极管 接口集成电路 |
| 文件： | 总16页 (文件大小：577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS31LT3117
53V, 350MA, 4-CHANNEL CONSTANT CURRENT REGULATOR WITH OTP
Preliminary Information
March 2015
GENERAL DESCRIPTION
FEATURES
The IS31LT3117 is a 4-channel, linear regulated,
constant current LED driver which can provide 4 equal
currents outputs of up to 350mA per channel to drive
high brightness LEDs over an input voltage range of
6V to 53V, while maintaining an output leakage current
of less than 1µA. The output current is easily
programmed using a single, tiny external resistor. The
outputs of the IS31LT3117 can be connected in
parallel to allow greater than 350mA output current.
6V to 53V input supply voltage range
Up to 1.4A total output current
Over temperature protections
Thermal current regulation above 130°C
±3% output current matching between channels
PWM dimming and shutdown control input
Optional 2.5V output to drive external standoff BJTs
Very few external components
The IS31LT3117 also features a PWM input to enable
simple dimming control using a digital control signal.
The recommended frequency range of the PWM signal
is 4kHz ~ 100kHz.
APPLICATIONS
Industrial LED lighting
The IS31LT3117 provides a unique over temperature
protection scheme. A hard shutdown which turns off all
LED currents occurs if the die junction temperature
exceeds the maximum value of 160°C. However, as
the die junction temperature rises up to over 130°C
(Typ.), the output current will begin to roll off at a rate
of -2.22%/°C (Typ.). If the die temperature continues to
rise above the hard shutdown temperature threshold,
the LED currents will drop to zero. When temperature
returns to 140°C (Typ.) or below, the hard shutdown
protection is released and the chip will function again.
Low EMI lighting applications
Low-side constant current regulator
The IS31LT3117 also has an optional 2.5V reference
voltage output which is able to supply up to 10mA (typ.)
output current. This voltage may be used to drive the
base of the external BJTs for higher current
applications in such case, driving for a wide varying
input voltage is needed.
The IS31LT3117 is offered in eTSSOP-16 package
with operating temperature range of -40°C to +125°C.
TYPICAL APPLICATION CIRCUIT
Figure 1 IS31LT3117 Directly Driving 4 LED Strings
Integrated Silicon Solution, Inc. – www.issi.com
1
Rev.0D, 03/10/2015
IS31LT3117
Figure 2 IS31LT3117 With Optional 2.5V Output Driving 4 External Standoff BJTs
Note 1: The 33µF output capacitor should be placed as close to the LED array as possible in order to minimize the parasitic inductor effect due
to the output wiring.
Note 2: The resistor RSET should be place as close to ISET and GND pins as possible.
Note 3: If you want less than four channels, the unused channel should be connected to GND.
Integrated Silicon Solution, Inc. – www.issi.com
2
Rev.0D, 03/10/2015
IS31LT3117
PIN CONFIGURATION
Package
Pin Configuration (Top View)
eTSSOP-16
PIN DESCRIPTION
No.
Pin
Description
PWM control pin. (PWM=high, enable. PWM=low
for 3.5ms, disable)
1
PWM
2, 5
PGND
VCC
NC
Power ground.
3
Voltage supply input (6V~53V).
No connection.
4,7,11,13,15
6
GND
Ground.
A resistor from this pin to ground will set all the
channel sink currents to the same value.
8
ISET
2.5V reference output capable of sourcing 10mA
(Typ.). A 1µF capacitor must be connected from this
pin to ground.
9
VREF
Current source outputs. Each channel should be
connected to GND if it is not used.
10,12,14,16
VLED4~VLED1
Thermal Pad
Connect to ground.
Integrated Silicon Solution, Inc. – www.issi.com
3
Rev.0D, 03/10/2015
IS31LT3117
ORDERING INFORMATION
Industrial Range: -40°C to +125°C
Order Part No.
Package
QTY
IS31LT3117-ZLS4-TR
IS31LT3117-ZLS4
2500/Reel
96/Tube
eTSSOP-16, Lead-free
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any
time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are
advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the
product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not
authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. – www.issi.com
4
Rev.0D, 03/10/2015
IS31LT3117
ABSOLUTE MAXIMUM RATINGS (NOTE 4)
VCC pin to GND
-0.3V ~ +56V
Voltage at PWM and VLEDx pins
Voltage at ISET pin
-0.3V ~ +56V
-0.3V ~ +6.0V
Current at VREF pin
10mA
Junction temperature, TJ
Storage temperature range, TSTG
Operating temperature range, TA
Power dissipation, PD(MAX) (Note 5)
Thermal resistance, junction to ambient, still air, θJA
ESD (HBM)
-40°C ~ +160°C
-65°C ~ +150°C
-40°C ~ +125°C
2.5W
39.9°C/W
All pins pass 2kV, except all ground pin pass 1.5kV
All pins pass 750V, except Pin 1 passes 100V
ESD (CDM)
Note 4:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 5:
Detail information please refers to package thermal de-rating curve on Page 12.
ELECTRICAL CHARACTERISTICS
Valid are at VCC = 12V, TA = TJ = -40°C ~ +125°C, typical value at 25°C, unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VCC
Supply voltage range
The ISET resistance
6.0
5.8
53
V
RSET
203
kΩ
R
SET=5.8kΩ, PWM=High
ISINK
Output current per channel
332.5
350
367.5
mA
mA
VVLEDx=1V, TA = 25°C
R
SET=5.8kΩ, PWM=High
13.8
6.3
90
IIN
ISD
tSD
fPWM
VHR
Quiescent Input supply current
Shutdown input current
RSET=203kΩ, PWM=High
PWM = Low, VCC=12V
µA
ms
kHz
V
The time of PWM pin keeping low
to shutdown the IC
3.5
4
The PWM dimming frequency
VCC=12V
100
1
Recommended VLED output
voltage headroom
ISINK=350mA (Note 6)
0.8
ILEAKAGE
Leakage current per channel
PWM=Low, VVLEDx=53V
µA
RSET=5.8kΩ, PWM=20kHz,
current rise from 10%~90%
(Note 7)
tRISE
Output current rise time
300
ns
ns
RSET=5.8kΩ, PWM=20kHz,
current fall down from
90%~10% (Note 7)
tFALL
Output current fall time
200
VISET
VPWMH
VPWML
ISET pin output voltage
1.16
1.4
1.27
1.38
0.4
V
V
V
PWM pin input logic high voltage
PWM pin input logic low voltage
VPWM rising
VPWM falling
Integrated Silicon Solution, Inc. – www.issi.com
5
Rev.0D, 03/10/2015
IS31LT3117
ELECTRICAL CHARACTERISTICS (CONTINUE)
Valid are at VCC = 12V, TA = TJ = -40°C ~ +125°C, typical value at 25°C, unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
TRO
TSD
Thermal roll off threshold
(Note 7)
130
160
20
°C
°C
°C
Thermal shutdown threshold
Thermal shutdown hysteresis
Temperature rising (Note 7)
Temperature falling (Note 7)
TSD-HYS
Current matching between
Channels
RSET=5.8kΩ, PWM=High
VVLEDx=1V
∆ISINK/ISINK
-3
3
%
V
VREF
Reference voltage output
2.32
2.5
2.76
Note 6: It is a recommended value to ensure a better line regulation of 350mA output current.
Note 7: Guarantee by design.
Integrated Silicon Solution, Inc. – www.issi.com
6
Rev.0D, 03/10/2015
IS31LT3117
TYPICAL PERFORMANCE CHARACTERISTICS
9.0
1.30
1.28
T
A
= 25ºC
VCC = 12V
8.9
8.8
8.7
8.6
1.26
1.24
8.5
8.4
8.3
8.2
1.22
1.20
8.1
8.0
6
12
18
24
30
36
42
48
54
-40 -25 -10
5
20
35
50
65
80
95 110 125
Supply Voltage (V)
Temperature (°C)
Figure 3 Supply Current vs. Supply Voltage
Figure 4 VISET vs. Temperature
12
11
2.60
2.58
TA = 25ºC
VCC = 12V
2.56
2.54
2.52
2.50
10
9
8
7
6
2.48
2.46
6
12
18
24
30
36
42
48
54
-40 -25 -10
5
20
35
50
65
80
95 110 125
Supply Voltage (V)
Temperature (°C)
Figure 6 VREF vs. Supply Voltage
Figure 5 Supply Current vs. Temperature
2.70
2.65
1.30
1.28
V
CC = 12V
TA = 25ºC
2.60
2.55
2.50
1.26
1.24
1.22
1.20
2.45
2.40
-40 -25 -10
5
20
35
50
65
80
95 110 125
6
12
18
24
30
36
42
48
54
60
Temperature (°C)
Supply Voltage (V)
Figure 8
VREF vs. Temperature
Figure 7 VISET vs. Supply Voltage
Integrated Silicon Solution, Inc. – www.issi.com
7
Rev.0D, 03/10/2015
IS31LT3117
400
350
300
250
200
150
100
350
300
250
200
150
100
V
CC = 12V
V
CC = 12V
= 25ºC
R
R
ISET = 5.8kΩ
TA
ISET = 20kΩ
50
0
R
ISET = 200kΩ
50
0
0
200 400 600 800 1000 1200 1400 1600 1800 2000
0
50
100
150
200
V
VLEDX (mV)
RISET (kΩ)
Figure 9 Output Current vs. VVLEDX
Figure 10 Output Current vs. RSET
400
350
300
250
200
150
100
400
380
360
340
320
300
280
260
240
V
CC = 12V
V
R
f
CC = 12V
ISET = 5.8kΩ
PWM = 4kHz,20kHz,100kHz
3 LEDs
50
0
220
200
0
20
40
60
80
100
-40 -25 -10
5
20
35
50
65
80
95 110 125
PWM Duty Cycle (%)
Temperature (°C)
Figure 11 Output Current vs. PWM Duty Cycle
Figure 12 Output Current vs. Temperature
Figure 14 Output Current vs. VPWM on Falling Time
Figure 13 Output Current vs. VPWM on Rising Time
Integrated Silicon Solution, Inc. – www.issi.com
8
Rev.0D, 03/10/2015
IS31LT3117
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. – www.issi.com
9
Rev.0D, 03/10/2015
IS31LT3117
APPLICATION INFORMATION
FUNCTIONAL DESCRIPTION
the PCB to allow the best possible thermal
performance of the circuit.
IS31LT3117 is a linear current regulator designed to
drive high brightness LEDs. The device integrates 4
channels capable of driving up to 350mA in each
channel and operates over a supply voltage range of
6V to 53V. Output current is easily programmed by
using a single resistor.
VLEDx
Constant current regulator channel. Each of the 4 input
pins are capable of sinking up to 350mA of current with
a headroom voltage VVLEDx of 0.8V (Min.).
It is recommended to maintain above a 0.8V VVLEDx to
ensure a better line regulation of 350mA output
current.
The IS31LT3117 incorporates a special thermal
regulation protection feature which prevents the die
temperature from exceeding the maximum rated
junction temperature of 160°C.
OUTPUT CURRENT
IS31LT3117 features a PWM/enable input which can
be used to realize PWM dimming of the LEDs. In
addition, the enable input can be used to put the
device into a low power consumption shutdown mode.
In shutdown, the device consumes only 80µA of supply
current.
The maximum sink current of all four channels are set
by a single resistor (RSET) connected from the ISET pin
to ground. The maximum possible current is 350mA
per channel. However, any of the four channels can be
connected in parallel to allow a larger current output.
The channel sink current can be calculated by the
following Equation (1):
VCC
V
ISET
The VCC input pin provides power to the internal
circuitry of the entire chip. The device supply current
will vary with the output current setting due to the
internal reference currents generated for each channel.
The nominal supply current is 11.5mA (RSET=5.8kΩ)
during operation.
ISINKx 1600
(1)
RSET
Where VISET = 1.27V (Typ.)
R
SET need to be chosen 1% accuracy resistor with
enough power tolerance and good temperature
characteristic to ensure stable output current.
ISET
The output current for the IS31LT3117 is set by
connecting a resistor from the ISET pin to GND. An
internal 1.27V reference voltage source will supply a
current to the external current setting resistor. The
reference current is internally amplified by a gain of
1600 to each of the 4 outputs. In order to have an
accurate current output, this current setting resistor
must be mounted as close to ISET and AGND pins as
possible.
The following table shows examples of ISINKX values for
various RSET settings:
ISINKx (mA)
RSET (kΩ)
10
203
20.3
5.8
100
350
If less than 4 channels are required for a particular
application, it is recommended to combine channels
together to drive the LEDs. This will help to reduce the
individual internal bias currents and, thus, the overall
power consumption and heat dissipation of the device.
PWM
When the PWM input pin is at low state (VPWM < 0.4V)
and stays low for more than 3.5ms, the IS31LT3117
enters a low power consumption mode with all of the
outputs turned OFF. In this mode, the IS31LT3117
consumes only 80µA of supply current. When the
PWM input pin is at high state (VPWM > 1.4V), the
IS31LT3117 will enters in operation mode to resume
normal operation and all outputs are turned ON. A
PWM input signal to the PWM pin can be used for
HBLED dimming control. The recommended frequency
range of PWM signal is 4kHz ~ 100kHz.
For example, it can be configured to combine two or
four channels to one channel to drive two or one string
of LEDs. If only three channels are used, the unused
channel should be connected to GND.
VREF
When time of sinking a high current from a voltage
source increases, the headroom voltage (VVLEDx) on
the current sinks will also increase. This will cause an
increase in power dissipation at the current sink, which
may result in an increase of the package temperature.
GND
Signal ground current return pin.
PGND
VVLEDx VCC VLEDS
(2)
Power ground current return pin. This pin should be
connected to as large as possible of a copper pad on
Where VLEDS = total LED VF for the channel.
Integrated Silicon Solution, Inc. – www.issi.com
10
Rev.0D, 03/10/2015
IS31LT3117
To address this thermal condition, the IS31LT3117
integrates a 2.5V reference output which can be used
to drive the base of an external BJT. This turns on the
BJT and effectively clamps the voltage across the
IS31LT3117’s output driver to approximately 0.8V. The
power dissipation is then shared between the IC and
the standoff transistor. The VREF pin can source up to
10mA of current to drive 4 external BJT’s, one for each
channel.
R5 can transfer the unwanted thermal power from Q5 to
itself. Assume the current thought Q5 is IQ5,
4
ISINKx
IQ5
(5)
1
X 1
The power on R5 can be given by Equation (6):
2
PR5 R5 IQ5
(6)
OPERATION WITH EXTERNAL BJTS
The power on Q5 can be given by Equation (7):
PQ5 VCC VREF VbeQ5 R5 IQ5 IQ5 (7)
In most of the applications, the largest power
dissipation will be caused by the current regulator. The
thermal dissipation is proportional to the headroom
voltage (VVLEDx) and the sink current flowing through it.
An appropriate value of R5 should be chosen to ensure
the power dissipation on Q5 won’t exceed the power
rating of Q5. If the sum of total power of PR5 and PQ5 is
low enough, R5 can be shorted and all power
dissipates on Q5.
When VCC is much higher than the VLEDS or ISINKx is
large, the power dissipation of the IS31LT3117 will be
high. This condition may easily trigger the over
temperature protection (OTP). Using external standoff
BJTs can transfer the unwanted thermal power from
the current regulator channel to the BJTs (Figure 15).
The power on Qx can be calculated by Equation (8):
PQx
VCC VLEDS VVLEDx
ISINKx
(8)
An appropriate value of Rx should be chosen to ensure
the power dissipation on Qx won’t exceed the power
rating of Qx.
All of these BJTs should be set to operate in the linear
region to ensure normal operation.
For example, assume ISINKx =350mA, VCC=12V, VLEDS
of three LEDs is 9.6V, the minimum of the selected
BJT is 200, the maximum base-emitter voltage of Q5
and Qx are all 0.7V, The minimum VREF pin output
voltage is 2.4V, The Vbe of BJT is approximately 0.7V.
Rx can be calculated from Equation (4):
Figure 15 IS31LT3117 with external BJTs
VREF VbeQ5 VbeQx VHD
With the external BJTs, the voltage across VLEDx to
GND is given by Equation (3):
Rx
ISINKx
1
VVLEDx VREF VbeQ5 Rx IbeQx VbeQx
(3)
2.4 0.7 0.7 0.8
ISINKx
115
VREF VbeQ5 Rx
VbeQx
0.35
1
200 1
Where VbeQ5 and VbeQx are the base-emitter voltage of
Q5 and Qx, IbeQx is the base-emitter current of Qx. is
the gain of BJT.
By Equation (5),
4
0.35
ISINKx
IQ5
4
7mA
In order to ensure the normal operation, the voltage
across VLEDx should not be lower than the minimum
headroom voltage, minimum VHD (0.8V). So,
1
200 1
X 1
Therefore,
ISINKx
P P PR5
VCC (VREF VbeQ5
) IQ5
VREF VbeQ5 Rx
VbeQx VHD
S
Q5
1
12
2.4 0.7 0.007 0.0721W
Therefore,
The PS is pretty low. So R5 can be eliminated.
VREF VbeQ5 V
VHD
beQx
And,
Rx
(4)
ISINKx
1
Integrated Silicon Solution, Inc. – www.issi.com
11
Rev.0D, 03/10/2015
IS31LT3117
The plot below illustrates the simulated output current
in the case of increasing temperature and, if thermal
shutdown is initiated or the ambient temperature
decreases, as a function of percentage of output
current programmed value.
PQx
VCC VLEDS VVLEDx
ISINKx
12 9.6 0.8
0.35 0.56W
LED BRIGHTNESS CONTROL
IS31LT3117 allows user to control the LED intensity in
two ways. First, the current sink level can be adjusted
by changing the external resistance, or by using an
external current source on the ISET pin to provide the
reference current. However, the spectral output of the
LED may shift slightly at different current levels, thus
adversely affecting the color temperature of the light
output.
Thermal shutdown
IS31LT3117 also provides a PWM input pin to control
the ON/OFF state of all four channels. Using a PWM
input signal of different duty cycle allows the average
LED current to be adjusted linearly and proportional to
the duty cycle, while maintaining the same peak
current through the LEDs. In this way, the light intensity
can be reduced without affecting the spectral content
of the light, effectively dimming the light without
changing the color temperature.
Hysteresis
Figure 16 Temperature regulation
Note that because of the test environment, RθJA and
test method, the output current will be a little different
from that of Figure 16. It is recommended a system
test to be performed to confirm the details of current
changing over the entire operation temperature range.
TEMPERATURE REGULATION
IS31LT3117 integrates a thermal regulation block
which is designed to protect the IC from overheating
when dissipating high power. If the junction
THERMAL DISSIPATION
temperature of the device exceeds 130°C (Typ.), the
output current in each channel will begin to reduce
linearly at a rate of -2.22% per °C and hence reduce
the power dissipation of the IC. If the junction
temperature of the IC continues to increase to the point
where the thermal shutdown temperature of 160°C is
reached or exceeded, the IC will automatically go into
shutdown mode in which all of the four channel’s sink
currents are reduced to a minimum.
The package thermal resistance, RθJA, determines the
amount of heat that can pass from the silicon die to the
surrounding ambient environment. The RθJA is a
measure of the temperature rise created by power
dissipation and is usually measured in degree Celsius
per watt (°C/W). The junction temperature,TJ, can be
calculated by the rise of the silicon temperature, ∆T,
the power dissipation, PD, and the package thermal
resistance, RθJA, as in Equation (10):
If the junction temperature of the device is above
130°C (Typ.), and if thermal shutdown is not initiated,
the output current will continue to regulate based on
the junction temperature. In the temperature range
130°C<TJ<160°C, the output current will regulate
based on the following Equation (9):
4
PD VCC IIN
V
IOUTx (10)
VLEDx
x 1
and,
TJ TA T TA PD JA
(11)
35
9
2
IOUT
T I
(9)
J
OUTMAX
90
Where VCC is the supply voltage, VVLEDx is the voltage
across VLEDx to GND and TA is the ambient
temperature.
When the junction temperature of IS31LT3117
exceeds 160°C (Typ.), the IC will switch all outputs and
internal output bias currents are turned off. This
reduces the power dissipation of the IC to the minimum,
and, under normal conditions, the IC will begin to cool
down. After thermal shutdown is initiated, the
temperature of the IC must drop below 140°C (Typ.)
before returning to normal operation. If thermal
shutdown is not initiated, the output current will
continue to regulate based on the junction
temperature.
When operating the device at high ambient
temperatures, or when driving high load current, care
must be taken to avoid exceeding the package power
dissipation limits. The maximum power dissipation can
be calculated using the following Equation (12):
125C 25C
(12)
PD(MAX )
JA
Integrated Silicon Solution, Inc. – www.issi.com
12
Rev.0D, 03/10/2015
IS31LT3117
BJTs should be used to withstand unwanted
dissipation.
125C 25C
39.9C /W
So,
PD(MAX )
2.5W
For example, the maximum VCC is 24VDC, the
minimum VVLEDx is 22V, the highest ambient
temperature is 40°C, and the IOUTx is 300mA. The
power dissipation and the junction temperature can be
calculated as:
Figure 17, shows the power derating of the
IS31LT3117 on a JEDEC boards (in accordance with
JESD 51-5 and JESD 51-7) standing in still air.
3
eTSSOP-16
PD 24 0.0115
24 22 0.3 4 2.676W
2.5
2
TJ 40 2.676 39.9 146.8C
TJ 125C
1.5
1
Hence this configuration needs external BJTs.
When designing the Printed Circuit Board (PCB) layout,
double-sided PCB with a copper area of a few square
millimeters on each side of the board directly under the
IS31LT3117 (eTSSOP-16 package) should be used.
Multiple thermal vias will help to conduct heat from the
exposed pad of the IS31LT3117 to the copper on each
side of the board. The thermal resistance can be
further reduced by using a metal substrate or by
adding a heatsink.
0.5
0
-40 -25 -10
5
20
35
50
65
80
95 110 125
Temperature (°C)
Figure 17 Dissipation curve
When the junction temperature, TJ, exceeds the
absolute maximum temperature (Typ.125°C), external
Integrated Silicon Solution, Inc. – www.issi.com
13
Rev.0D, 03/10/2015
IS31LT3117
CLASSIFICATION REFLOW PROFILES
Profile Feature
Pb-Free Assembly
Preheat & Soak
150°C
200°C
60-120 seconds
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
217°C
60-150 seconds
Peak package body temperature (Tp)*
Max 260°C
Time (tp)** within 5°C of the specified
classification temperature (Tc)
Max 30 seconds
Average ramp-down rate (Tp to Tsmax)
Time 25°C to peak temperature
6°C/second max.
8 minutes max.
Figure 18 Classification Profile
Integrated Silicon Solution, Inc. – www.issi.com
14
Rev.0D, 03/10/2015
IS31LT3117
PACKAGE INFORMATION
eTSSOP-16
Integrated Silicon Solution, Inc. – www.issi.com
15
Rev.0D, 03/10/2015
IS31LT3117
LAND PATTERN
Note:
1. Land pattern complies to IPC-7351.
2. All dimensions in MM.
Integrated Silicon Solution, Inc. – www.issi.com
16
Rev.0D, 03/10/2015
相关型号：
©2020 ICPDF网 联系我们和版权申明