IS62VV25616LL-85BI [ISSI]
Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48;
| 型号： | IS62VV25616LL-85BI |
| 厂家： | 
INTEGRATED SILICON SOLUTION, INC |
| 描述： | Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 7.20 X 8.70 MM, MINI, BGA-48 静态存储器 内存集成电路 |
| 文件： | 总10页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
IS62VV25616L/LL
256K x 16 LOW VOLTAGE, 1.8V ULTRA
LOW POWER CMOS STATIC RAM
ISSI
PRELIMINARY INFORMATION
SEPTEMBER 2000
FEATURES
DESCRIPTION
The ISSI IS62VV25616L and IS62VV25616LL are
high-speed, 4,194,304 bit static RAMs organized as
262,144 words by 16 bits. They are fabricated using
ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields high-performance and low power
consumption devices.
• High-speed access time: 70, 85, 100 ns
• CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 1.65V-1.95V VCC power supply
FortheIS62VV25616L/LL, whenCE isHIGH(deselected)
or CE is low and both LB and UB are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
• Fully static operation: no clock or refresh
required
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
• Three state outputs
• Data control for upper and lower bytes
• Industrialtemperatureavailable
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (7.2mm x 8.7mm)
TheIS62VV25616LandIS62VV25616LLarepackagedin
the JEDEC standard 44-pin TSOP (Type II) and 48-pin
mini BGA (7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
256K x 16
MEMORY ARRAY
A0-A17
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
CIRCUIT
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
48-Pin mini BGA
1
2
3
4
5
6
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
CE
A0
A3
A1
A4
A2
LB
OE
UB
N/C
A
B
C
D
E
F
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17
I/O
CE
I/O
0
8
9
I/O
9
I/O
10
A5
A6
I/O
1
I/O
2
10
11
12
13
14
15
16
17
18
19
20
21
22
GND
Vcc
A17
NC
A14
A12
A7
I/O
I/O
I/O
3
I/O
4
I/O
5
Vcc
11
GND
A16
A15
A13
A10
12
I/O
14
I/O
13
I/O
6
I/O
15
NC
A8
WE
I/O
7
G
H
NC
A9
A11
NC
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
CE
Address Inputs
LB
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
UB
NC
OE
Vcc
GND
Power
WE
Ground
TRUTHTABLE
I/O PIN
Mode
WE
CE
OE
LB
UB
I/O0-I/O7
I/O8-I/O15 Vcc Current
Not Selected
X
X
H
L
X
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
ISB1, ISB2
ISB1, ISB2
Output Disabled
Read
H
X
L
L
H
X
X
H
X
H
High-Z
High-Z
High-Z
High-Z
ICC
ISB1, ISB2
H
H
H
L
L
L
L
L
L
L
H
L
H
L
L
DOUT
High-Z
DOUT
High-Z
DOUT
DOUT
ICC
Write
L
L
L
L
L
L
X
X
X
L
H
L
H
L
L
DIN
High-Z
DIN
High-Z
DIN
DIN
ICC
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
Industrial
0°C to +70°C
1.65V - 1.95V
1.65V - 1.95V
–40°C to +85°C
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TBIAS
VCC
Parameter
Value
–0.2 to Vcc+0.3
–40 to +85
–0.2 to +2.6
–65 to +150
1.0
Unit
V
Terminal Voltage with Respect to GND
Temperature Under Bias
Vcc Related to GND
°C
V
TSTG
PT
Storage Temperature
°C
W
Power Dissipation
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extendedperiodsmayaffectreliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
IOH = -0.1 mA
IOL = 0.1 mA
Min.
1.4
—
Max.
Unit
V
VOH
VOL
VIH
Output HIGH Voltage
—
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
0.2
V
1.4
–0.3
–1
VCC + 0.2
V
(1)
VIL
ILI
0.4
1
V
GND ≤ VIN ≤ VCC
µA
µA
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, Outputs Disabled
–1
1
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
CAPACITANCE(1)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
8
Unit
Input Capacitance
Input/Output Capacitance
pF
pF
COUT
VOUT = 0V
10
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
AC TEST CONDITIONS
Parameter
Unit
0.4V to VCC - 0.2V
5 ns
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
0.9V
Output Load
See Figures 1 and 2
AC TEST LOADS
3070 Ω
3070 Ω
1.8V
1.8V
OUTPUT
OUTPUT
3150 Ω
3150 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1
Figure 2
IS62VV25616L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
-85
-100
Symbol
Parameter
TestConditions
CC = Max.,
OUT = 0 mA, f = fMAX
CC = Max.,
OUT = 0 mA, f = 1 MH
Min. Max.
Min. Max.
Min. Max.
Unit
ICC
VccDynamicOperating
SupplyCurrent
V
I
Com.
Ind.
—
—
20
25
—
—
15
20
—
—
10
15
mA
ICC1
ISB1
OperatingSupply
Current
V
I
Com.
Ind.
—
—
3
3
—
—
3
3
—
—
3
3
mA
mA
Z
TTLStandbyCurrent
(TTLInputs)
VCC = Max.,
Com.
Ind.
—
—
0.3
0.3
—
—
0.3
0.3
—
—
0.3
0.3
V
IN = VIH or VIL
CE
≥ VIH , f = 0
OR
ULB Control
Vcc = Max., VIN = VIH or VIL
CE = VIL, f = 0, UB = VIH, LB = VIH
ISB2
CMOSStandby
Current (CMOS Inputs) CE
V
CC = Max.,
Com.
Ind.
—
—
10
10
—
—
10
10
—
—
10
10
µA
≥
≥
≤
V
V
CC – 0.2V,
CC – 0.2V, or
0.2V, f = 0
V
V
IN
IN
OR
ULB Control
VCC = Max., CE = VIL
IN ≤ 0.2V, f = 0; UB / LB = VCC – 0.2V
V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
IS62VV25616LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
-85
-100
Min. Max.
Symbol Parameter
TestConditions
CC = Max.,
OUT = 0 mA, f = fMAX
CC = Max.,
OUT = 0 mA, f = 0
Min. Max.
Min. Max.
Unit
mA
ICC
VccDynamicOperating
SupplyCurrent
V
I
V
I
Com.
Ind.
Com.
Ind.
Com.
Ind.
—
—
—
—
—
—
20
25
3
3
0.3
0.3
—
—
—
—
—
—
15
20
3
3
0.3
0.3
—
—
10
15
I
CC
1
OperatingSupply
Current
—
—
3
3
mA
mA
I
SB
1
TTLStandbyCurrent
(TTLInputs)
VCC = Max.,
—
—
0.3
0.3
V
IN = VIH or VIL
CE
≥
V
IH , f = 1 MH
Z
OR
ULB Control
VCC = Max., VIN = VIH or VIL
CE = VIL, f = 0, UB = VIH, LB = VIH
I
SB
2
CMOSStandby
Current (CMOS Inputs)
V
CE
V
V
CC = Max.,
Com.
Ind.
—
—
5
5
—
—
5
5
—
—
5
5
µA
≥
≥
≤
V
V
CC – 0.2V,
CC – 0.2V, or
0.2V, f = 0
IN
IN
OR
ULB Control
VCC = Max., CE = VIL
IN ≤ 0.2V, f = 0; UB / LB = VCC – 0.2V
V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-70
Min.
-85
Min.
-100
Min.
Symbol
tRC
Parameter
Max.
—
Max.
—
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
70
—
10
—
—
—
5
85
—
10
—
—
—
5
100
—
10
—
—
—
5
—
100
—
tAA
Address Access Time
Output Hold Time
70
—
85
—
tOHA
tACE
tDOE
CE Access Time
70
35
25
—
85
40
25
—
100
50
OE Access Time
(2)
tHZOE
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
30
(2)
tLZOE
—
(2)
tHZCE
0
25
—
0
25
—
0
30
(2)
tLZCE
10
—
0
10
—
0
10
—
0
—
tBA
70
25
—
85
25
—
100
35
tHZB
tLZB
0
0
0
—
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
outputloadingspecifiedinFigure1.
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100ꢀ tested.
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
tRC
ADDRESS
tAA
tOHA
DATA VALID
tOHA
DOUT
PREVIOUS DATA VALID
AC WAVEFORMS
READ CYCLE NO. 2(1,3) (CE, OE, AND UB/LB Controlled)
tRC
ADDRESS
tAA
tOHA
OE
tHZOE
tHZCE
tHZB
tDOE
tLZOE
tACE
CE
tLZCE
LB, UB
tBA
tLZB
HIGH-Z
DOUT
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-70
Min. Max.
-85
Min. Max.
-100
Min. Max.
Symbol
tWC
Parameter
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
70
65
65
0
—
—
—
—
—
—
—
—
—
30
—
85
70
70
0
—
—
—
—
—
—
—
—
—
30
—
100
80
80
0
—
—
—
—
—
—
—
—
—
40
—
tSCE
tAW
CE to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
tHA
tSA
0
0
0
tPWB
tPWE
tSD
LB, UB Valid to End of Write
WE Pulse Width
60
55
30
0
70
60
35
0
80
80
40
0
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
tHD
(3)
tHZWE
—
5
—
5
—
5
(3)
tLZWE
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V and
outputloadingspecifiedinFigure1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
anyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatesthewrite.
3. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100ꢀ tested.
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)
t
WC
VALID ADDRESS
SCS
ADDRESS
t
SA
t
t
HA
CE
t
AW
t
tPPWWEE21
WE
t
PBW
UB, LB
t
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
D
OUT
t
SD
t
HD
DATAIN VALID
DIN
UB_CSWR1.eps
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of
the LB and UB inputs being in the LOW state.
2. WRITE = (CE) [ (LB) = (UB) ] (WE).
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
LOW
CE
t
AW
t
PWE1
WE
t
SA
t
PBW
UB, LB
t
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
D
OUT
t
SD
t
HD
DATAIN VALID
D
IN
UB_CSWR2.eps
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
t
HA
LOW
LOW
OE
CE
t
t
AW
t
PWE2
WE
t
SA
t
PBW
UB, LB
HZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
D
OUT
t
SD
t
HD
DATAIN VALID
D
IN
UB_CSWR3.eps
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
WRITE CYCLE NO. 4 (UB/LB Controlled)
t
WC
t
WC
ADDRESS 1
ADDRESS 2
ADDRESS
OE
CE
t
SA
LOW
t
HA
SA
t
HA
t
WE
t
PBW
t
PBW
UB, LB
WORD 1
WORD 2
t
HZWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
HD
t
HD
t
SD
t
SD
DATAIN
VALID
DATAIN
VALID
D
IN
UB_CSWR4.eps
DATA RETENTION SWITCHING CHARACTERISTICS (L/LL)
Symbol
VDR
Parameter
TestCondition
Min.
Max.
Unit
V
Vcc for Data Retention
DataRetentionCurrent
SeeDataRetentionWaveform
Vcc = 1.0V, CE ≥ Vcc – 0.2V
1.0
2.2
IDR
—
—
15
5
µA
(For -L version)
(For-LLversion)
tSDR
tRDR
Data Retention Setup Time
RecoveryTime
SeeDataRetentionWaveform
SeeDataRetentionWaveform
0
—
—
ns
ns
tRC
DATA RETENTION WAVEFORM (CE Controlled)
tSDR
Data Retention Mode
tRDR
VCC
1.65V
1.4V
VDR
CE ≥ VCC - 0.2V
CE
GND
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
PRELIMINARY INFORMATION Rev. 00B
10/05/00
®
IS62VV25616L/LL
ISSI
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No.
Package
Speed (ns) Order Part No.
Package
70
IS62VV25616L-70TI
IS62VV25616L-70BI Mini BGA
TSOP (Type II)
70
IS62VV25616L-70T
IS62VV25616L-70B
TSOP (Type II)
Mini BGA
85
IS62VV25616L-85TI
IS62VV25616L-85BI Mini BGA
TSOP (Type II)
85
IS62VV25616L-85T
IS62VV25616L-85B
TSOP (Type II)
Mini BGA
100
IS62VV25616L-10T
IS62VV25616L-10B
TSOP (Type II)
Mini BGA
100
IS62VV25616L-10TI
IS62VV25616L-10BI Mini BGA
TSOP (Type II)
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Package
Speed (ns) Order Part No.
Package
70
IS62VV25616LL-70TI TSOP (Type II)
70
IS62VV25616LL-70T TSOP (Type II)
IS62VV25616LL-70BI Mini BGA
IS62VV25616LL-70B Mini BGA
85
IS62VV25616LL-85T TSOP (Type II)
IS62VV25616LL-85B Mini BGA
85
IS62VV25616LL-85TI TSOP (Type II)
IS62VV25616LL-85BI Mini BGA
100
IS62VV25616LL-10TI TSOP (Type II)
IS62VV25616LL-10BI Mini BGA
100
IS62VV25616LL-10T TSOP (Type II)
IS62VV25616LL-10B Mini BGA
®
ISSI
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00B
10/05/00
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