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FII30-12D [IXYS]

Fast IGBT Chopper in ISOPLUS i4-PACTM; 在ISOPLUS 6-14 PACTM快速IGBT斩波
FII30-12D
型号： FII30-12D
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Fast IGBT Chopper in ISOPLUS i4-PACTM
在ISOPLUS 6-14 PACTM快速IGBT斩波

双极性晶体管
文件： 总2页 (文件大小：50K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Advanced Technical Information  
IC25  
VCES  
= 30 A  
= 1200 V  
Fast IGBT Chopper  
FII 30-12D  
in ISOPLUS i4-PACTM  
VCE(sat)typ. = 2.3 V  
1
5
Features  
IGBT  
• NPTIGBT  
- low saturation voltage  
- no latch up  
Symbol  
VCES  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
V
- positive temperature coefficient for  
easy paralleling  
±
VGES  
20  
• HiPerFREDTM diode  
IC25  
IC90  
TC = 25°C  
TC = 90°C  
30  
18  
A
A
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
±
ICM  
VCEK  
VGE = 15 V; RG = 82 Ω; TVJ = 125°C  
35  
VCES  
A
µs  
W
RBSOA, Clamped inductive load; L = 100 µH  
• ISOPLUS i4-PACTM package  
- isolated back surface  
- enlarged creepage towards heatsink  
- application friendly pinout  
- low inductive current path  
- high reliability  
±
tSC  
(SCSOA)  
VCE = VCES; VGE = 15 V; RG = 82 Ω; TVJ = 125°C  
non-repetitive  
10  
Ptot  
TC = 25°C  
125  
- industry standard outline  
Symbol  
Conditions  
Characteristic Values  
(TVJ = 25°C, unless otherwise specified)  
Applications  
min.  
typ. max.  
• single phaseleg  
- buck-boost chopper  
• H bridge  
VCE(sat)  
IC = 20 A; VGE = 15 V; TVJ = 25°C  
TVJ = 125°C  
2.3  
2.6  
3.0  
V
V
- power supplies  
- induction heating  
- four quadrant DC drives  
- controlled rectifier  
• three phase bridge  
- AC drives  
VGE(th)  
ICES  
IC = 0.6 mA; VGE = VCE  
4.5  
6.5  
V
VCE = VCES;VGE = 0 V; TVJ = 25°C  
TVJ = 125°C  
0.9 mA  
mA  
0.9  
±
IGES  
VCE = 0 V; VGE  
=
20 V  
200 nA  
- controlled rectifier  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
100  
75  
500  
70  
3.0  
2.4  
ns  
ns  
ns  
ns  
mJ  
mJ  
Inductive load, TVJ = 125°C  
VCE = 600 V; IC = 20 A  
±
VGE = 15 V; RG = 82 Ω  
Cies  
QGon  
VCE = 25 V; VGE = 0 V; f = 1 MHz  
VCE = 600V; VGE = 15 V; IC = 18 A  
1000  
70  
pF  
nC  
RthJC  
1.0 K/W  
© 2000 IXYS All rights reserved  
1 - 2  
IXYS Semiconductor GmbH  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
FII 30-12D  
Diodes  
Dimensions in mm (1 mm = 0.0394")  
Symbol  
VRRM  
Conditions  
Maximum Ratings  
TVJ = 25°C to 150°C  
1200  
V
IF25  
IF90  
TC = 25°C  
TC = 90°C  
25  
15  
A
A
Symbol  
VF  
Conditions  
Characteristic Values  
min. typ. max.  
IF = 20 A; TVJ = 25°C  
TVJ = 125°C  
2.5  
1.9  
2.9  
V
V
IRM  
trr  
IF = 15 A; di /dt = -400 A/µs; TVJ = 125°C  
VR = 600 V;FVGE = 0 V  
16  
130  
A
ns  
RthJC  
(per diode)  
2.3 K/W  
Component  
Symbol  
Conditions  
Maximum Ratings  
TVJ  
Tstg  
-55...+150  
-55...+125  
°C  
°C  
VISOL  
FC  
I
ISOL ≤ 1 mA; 50/60 Hz  
2500  
V~  
N
mounting force with clip  
20...120  
Symbol  
Conditions  
Characteristic Values  
min.  
typ. max.  
dS,dA  
dS,dA  
pin - pin  
pin - backside metal  
1.7  
5.5  
mm  
mm  
RthCH  
with heatsink compound  
0.15  
9
K/W  
g
Weight  
© 2000 IXYS All rights reserved  
2 - 2  

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