GWM220-004P3-BL [IXYS]
Power Field-Effect Transistor, 180A I(D), 40V, 0.0026ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | GWM220-004P3-BL |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 180A I(D), 40V, 0.0026ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| 文件： | 总2页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GWM 220-004P3
VDSS = 40 V
RDSon = 2.0 mΩ
ID25 = 190 A
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
L +
Preliminary data
G3
G5
S5
G1
S3
S1
L1
L2
L3
G4
G6
S6
G2
S4
S2
L -
Applications
MOSFETs
AC drives
• in automobiles
Symbol
VDSS
Conditions
Maximum Ratings
-electric power steering
-starter generator
• in industrial vehicles
-propulsion drives
-fork lift drives
TVJ = 25°C to 150°C
40
20
V
V
VGS
ID25
ID90
TC = 25°C
TC = 90°C
190
145
A
A
• in battery supplied equipment
IF25
IF90
TC = 25°C (diode)
TC = 90°C (diode)
125
80
A
A
Features
• MOSFETs in trench technology:
-logic level gate control
-low RDSon
-optimized intrinsic reverse diode
• package:
-high level of integration
-high current capability
-auxiliary terminals for MOSFET control
-terminals for soldering or welding
connections
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
RDSon
on chip level at
VGS = 10 V
TVJ = 25°C
TVJ = 125°C
2.0
3.2
2.6 mΩ
mΩ
VGSth
IDSS
VDS = 20 V;ID = 1 mA
2
4
1
V
VDS = VDSS;VGS = 0 V; TVJ = 25°C
TVJ = 125°C
µA
mA
-isolated DCB ceramic base plate
with optimized heat transfer
0.1
IGSS
VGS = 20 V; VDS = 0 V
0.2 µA
Qg
Qgs
Qgd
94
18
29
nC
nC
nC
VGS= 10 V; VDS = 14 V; ID = 25 A
td(on)
tr
td(off)
tf
40
85
140
90
ns
ns
ns
ns
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10 Ω
VF
trr
(diode) IF = 110 A; VGS= 0 V
1.0
70
1.6
V
(diode) IF = 20 A; -di/dt = 100 A/µs; VDS= 20 V
ns
RthJC
RthJH
0.85 K/W
K/W
with heat transfer paste
1.1
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1 - 2
GWM 220-004P3
Component
Equivalent Circuits for Simulation
Thermal Response
Symbol
IRMS
Conditions
Maximum Ratings
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
300
A
TVJ
Tstg
-40...+175
-55...+125
°C
°C
VISOL
FC
IISOL ≤ 1 mA; 50/60 Hz; t = 1 min
1000
V~
N
junction - case (typ.)
Mounting force with clip
50 - 250
Cth1 = 0.039 J/K; Rth1 = 0.28 K/W
Cth2 = 0.069 J/K; Rth2 = 0.57 K/W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
Rpin to chip
CP
0.6
mΩ
coupling capacity between shorted
pins and mounting tab in the case
160
pF
Weight
typ.
25
g
Dimensions in mm (1 mm = 0.0394")
© 2005 IXYS All rights reserved
2 - 2
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