IXDF402SIA-16 [IXYS]
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers; 2安培双低侧超快MOSFET驱动器
| 型号： | IXDF402SIA-16 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
| 文件： | 总10页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IXDN402 / IXDI402 / IXDF402
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
General Description
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-UpProtectedOverEntire
OperatingRange
TheIXDN402/IXDI402/IXDF402consistsoftwo2Amp
CMOS high speed MOSFET drivers. Each output can
source and sink 2A of peak current while producing voltage
rise and fall times of less than 15ns to drive the latest IXYS
MOSFETs & IGBTs. The input of the driver is TTL or CMOS
compatible and is fully immune to latch up over the entire
operatingrange. Apatent-pendingcircuitvirtuallyeliminates
crossconductionandcurrentshoot-through. Improved
speedanddrivecapabilitiesarefurtherenhancedbyvery
low and matched rise and fall times.
• High Peak Output Current: 2A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
DriveCapability:1000pFin<10ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• LowOutputImpedance
TheIXDN402isconfiguredasadualnon-invertinggate
driver,theIXDI402asadualinvertinggatedriver,andthe
IXDF402asadualinverting+non-invertinggatedriver.
• LowSupplyCurrent
• TwoDriversinSingleChip
Applications
TheIXDN402/IXDI402/IXDF402familyareavailableinthe
standard 8 pin P-DIP (PI), SOP-8 (SIA) and SOP-16 (SIA-
16)packages. Forenhancedthermalperformance, the
SOP-8 and SOP-16 are also available with an exposed
grounded backmetal package as the SI and SI-16 respec-
tively.
• DrivingMOSFETsandIGBTs
• MotorControls
• LineDrivers
• PulseGenerators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DCtoDCConverters
• PulseTransformerDriver
• Class D Switching Amplifiers
Ordering Information
Part Number
Package Type
Temp. Range
Configuration
IXDN402PI
8-Pin PDIP
IXDN402SI
8-Pin SOIC with Grounded Backmetal
8-Pin SOIC
-55°C to
+125°C
Dual Non
Inverting
IXDN402SIA
IXDN402SI-16
IXDN402SIA-16
IXDI402PI
16-Pin SOIC with Grounded Backmetal
16-Pin SOIC
8-Pin PDIP
IXDI402SI
8-Pin SOIC with Grounded Backmetal
8-Pin SOIC
-55°C to
+125°C
Dual Inverting
IXDI402SIA
IXDI402SI-16
IXDI402SIA-16
IXDF402PI
16-Pin SOIC with Grounded Backmetal
16-Pin SOIC
8-Pin PDIP
IXDF402SI
8-Pin SOIC with Grounded Backmetal
8-Pin SOIC
Inverting + Non
Inverting
-55°C to
+125°C
IXDF402SIA
IXDF402SI-16
IXDF402SIA-16
16-Pin SOIC with Grounded Backmetal
16-Pin SOIC
NOTE: Mounting or solder tabs on all packages are connected to ground
Copyright©IXYSCORPORATION2002
First Release
IXDN402 / IXDI402 / IXDF402
Figure 1 - IXDN402 Dual 2A Non-Inverting Gate Driver Functional Block Diagram
Vcc
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN A
OUT A
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
IN B
OUT B
GND
Figure 2 - IXDI402 Dual Inverting 2A Gate Driver Functional Block Diagram
Vcc
P
ANTI-CROSS
IN A
OUT A
CONDUCTION
CIRCUIT *
N
P
ANTI-CROSS
OUT B
IN B
CONDUCTION
CIRCUIT *
N
GND
Figure 3 - IXDF402 Inverting + Non-Inverting 2A Gate Driver Functional Block Diagram
Vcc
P
ANTI-CROSS
IN A
OUT A
CONDUCTION
CIRCUIT *
N
P
N
ANTI-CROSS
CONDUCTION
CIRCUIT *
OUT B
IN B
GND
* Patent Pending
2
IXDN402 / IXDI402 / IXDF402
Absolute Maximum Ratings (Note 1)
Operating Ratings
Parameter
Value
Parameter
Value
-55 C to 125
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Lead Temperature (10 sec)
25 V
Operating Temperature Range
o
o
C
-0.3 V to V
+ 0.3 V
CC
Thermal Impedance (To Ambient)
o
o
8 Pin PDIP (PI) (θJA)
130 C/W
150 C
o
8 Pin SOIC (SIA) (θJA)
16 Pin SOIC (SIA-16) (θJA)
o
o
120 C/W
-65 C to 150 C
o
o
120 C/W
300 C
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 25V .
All voltage measurements with respect to GND. IXDD402 configured as described in Test Conditions. All specifications are for one channel.
Symbol
VIH
VIL
VIN
IIN
Parameter
Test Conditions
Min
3
Typ
Max
Units
V
V
V
µA
High input voltage
Low input voltage
Input voltage range
Input current
2.4
VCC + 0.3
10
-5
-10
0V ≤ VIN ≤ VCC
VOH
VOL
ROH
High output voltage
Low output voltage
VCC - 0.025
V
V
Ω
0.025
4
Output resistance
VCC = 18V
VCC = 18V
VCC is 18V
3.7
2.5
2
@ Output high
ROL
IPEAK
IDC
Output resistance
@ Output Low
3
Ω
A
A
Peak output current
Continuous output
current
1
tR
tF
tONDLY
Rise time
CL=1000pF Vcc=18V
CL=1000pF Vcc=18V
CL=1000pF Vcc=18V
7
7
27
8
8
28
10
9
32
ns
ns
ns
Fall time
On-time propagation
delay
tOFFDLY
Off-time propagation
delay
CL=1000pF Vcc=18V
25
26
18
30
25
ns
V
mA
µA
µA
VCC
ICC
Power supply voltage
4.5
Power supply current
VIN = 3.5V
VIN = 0V
1
3
0
10
10
VIN = + VCC
Specifications Subject To Change Without Notice
3
IXDN402 / IXDI402 / IXDF402
Pin Description
SYMBOL
FUNCTION
DESCRIPTION
IN A
A Channel Input
A Channel Input signal-TTL or CMOS compatible.
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
GND
Ground
IN B
B Channel Input
B Channel Input signal-TTL or CMOS compatible.
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
OUT B
B Channel Output
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 25V.
VCC
Supply Voltage
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
OUT A
A Channel Output
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Note 1: Operating the device beyond the parameters listed as “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
Figure 4 - Characteristics Test Diagram
Vcc
1
2
3
8
7
6
5
NC
Out A
Vcc
NC
In A
Gnd
10uF
25V
4 In B
Out B
Agilent 1147A
Current Probe
Agilent 1147A
Current Probe
1000 pF
1000 pF
4
IXDN402 / IXDI402 / IXDF402
Typical Performance Characteristics
Fig. 3
Fig. 4
Output Rise Time vs. Supply Voltage
CL = 100pF to 6800pF
Output Fall Time vs. Supply Voltage
CL = 100pF to 6800pF
60
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
6800 pF
6800 pF
3900 pF
3900 pF
2200 pF
2200 pF
1000 pF
1000 pF
470 pF
100 pF
470 pF
100 pF
8
10
12
14
16
18
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
Fig. 5
12
Output Rise And Fall Times vs. Case Temperature
CL =1000pF, Vcc =18V
Fig. 6
Output Rise Times vs. Load Capacitance
90
80
70
60
50
40
30
20
10
8V
10
8
tR
tF
10V
12V
14V
16V
18V
6
4
2
0
0
0
-60
1000
2000
3000
4000
5000
6000
7000
-40
-20
0
20
40
60
80
100
120
140
Load Capacitance (pF)
Temperature (C)
Max/ MinInput vs. Temperature
CL = 1000 pF Vcc = 18V
Fig. 7
Fig. 8
Output Fall Times vs. Load Capacitance
3.5
3.3
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
8V
50
45
40
35
30
25
20
15
10
5
12V
Minimum Input High
14V
16V
Max imum Input Low
0
0
1000
2000
3000
4000
5000
6000
7000
-60
-40
-20
0
20
40
60
80
100
120
140
Load Capacitance (pF)
Temperature (C)
5
IXDN402 / IXDI402 / IXDF402
Supply Current vs. Frequency
Vcc = 18V
Fig. 10
Supply Current vs. Load Capacitance
Vcc = 18V
Fig. 9
1 MHz
1000
100
2 MHz
6800 pF
3900 pF
90
80
70
60
50
40
30
20
10
0
2200 pF
1000 pF
470 pF
100 pF
100
10
500 kHz
1
0.1
0.01
100 kHz
50 kHz
10 kHz
1
10
100
1000
10000
100
1000
10000
Load Capacitance (pF)
Frequency (kHz)
Fig. 12
Fig. 11
Supply Current vs. Load Capacitance
Vcc = 12V
SupplyCurrent vs. Frequency
Vcc = 12V
2 MHz
100
1000
90
80
70
60
50
40
30
20
10
0
1 Mhz
6800 pF
3900 pF
470 pF
100
10
500 kHz
1
0.1
0.01
100 kHz
50 kHz
10 kHz
100
1000
10000
1
10
100
1000
10000
Load Capacitance (pF)
Frequency (kHz)
Fig. 13
SupplyCurrent vs. Frequency
Vcc = 8V
Supply Current vs. Load Capacitance
Vcc = 8V
Fig. 14
2 MHz
100
90
80
70
60
50
40
30
20
10
1000
3900 pF
100
10
1
2200 pF
470pF
100 pF
1 MHz
500 kHz
0.1
100 kHz
50 kHz
10 kHz
0.01
1
0
100
1000
10000
10
100
1000
10000
Load Capacitance (pF)
Frequency(kHz)
6
IXDN402 / IXDI402 / IXDF402
Propagation Delay vs. Input Voltage
CL = 1000 pF Vcc = 15V
Fig. 16
Propagation Delay vs. Supply Voltage
CL=1000 pF Vin=5V@1KHz
Fig. 15
45
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
tONDLY
tONDLY
tOFFDLY
tOFFDLY
0
0
2
8
10
12
14
16
18
3
4
5
6
7
8
9
10
11
12
Supply Voltage (V)
Input Voltage (V)
Fig. 17
Fig. 18
Quiescent SupplyCurrent vs. Temperature
Vcc =18V, Vin=5V@1kHz, CL = 1000pF
Propagation Delay Times vs. Temperature
CL = 1000pF, Vcc = 18V
40
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
35
30
25
20
15
10
tONDLY
tOFFDLY
-60
-40
-20
0
20
40
60
80
100
120
140
-60
-40
-20
0
20
40
60
80
100
120
140
Temperature (C)
Temperature (C)
Fig. 19
N Channel Sink Output Current vs. Temperature
Vcc = 18VCL = 1000 pF
P Channel Output Source Current vs. Temperature
Vcc = 18V, CL = 1000 pF
Fig. 20
4.5
4
3.5
3
4
3.5
3
2.5
2
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
-60
-40
-20
0
20
40
60
80
100
120
140
-60
-40
-20
0
20
40
60
80
100
120
140
Temperature (C)
Temperature (C)
7
IXDN402 / IXDI402 / IXDF402
Fig. 22
Low State Output Resistance vs. Supply Voltage
Fig. 21
High State Output Resistance vs. Supply Voltage
8
4.5
4
3.5
3
7
6
5
4
3
2
1
2.5
2
1.5
1
0.5
0
0
7
9
11
13
15
17
19
21
23
25
7
9
11
13
15
17
19
21
23
25
Supply Voltage (V)
Supply Voltage (V)
Fig. 24
Vcc vs. P Channel Output Current
Vcc vs. N Channel Source Output Current
Fig. 23
0
5
4.5
4
-0.5
-1
3.5
3
-1.5
-2
2.5
2
1.5
1
-2.5
-3
0.5
0
-3.5
7
9
11
13
15
17
19
21
23
25
7
9
11
13
15
17
19
21
23
25
Vcc (V)
Vcc (V)
8
IXDN402 / IXDI402 / IXDF402
PIN CONFIGURATIONS
1
2
3
4
NC
OUT A
VS
1
2
3
4
NC
NC
8
7
6
5
NC
8
7
6
5
1
2
3
4
NC
OUT A
VS
NC
8
7
6
5
IN A
GND
INB
IN A OUT A
IN A
GND
INB
VS
GND
INB
OUT B
OUT B
OUT B
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN402
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI402
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDF402
NC
NC
1
NC
OUT A
OUT A
VCC
16
15
14
13
12
11
NC 16
1
NC
NC
OUT A
OUT A
VCC
16
15
14
13
12
11
1
2
3
4
5
6
7
8
OUT A
15
14
13
12
11
2
3
4
5
6
7
8
IN A
NC
2
3
4
5
6
7
8
IN A
NC
IN A
NC
OUT A
VCC
GND
GND
GND
GND
NC
VCC
GND
NC
VCC
GND
NC
VCC
OUT B
OUT B
OUT B
IN B
NC
IN B
NC
OUT B 10
NC
OUT B 10
NC
IN B
NC
OUT B 10
NC
9
9
9
16 Pin SOIC
IXDI402SI-16
16 Pin SOIC
IXDF402SI-16
16 Pin SOIC
IXDN402SI-16
Supply Bypassing, Grounding Practices And Output Lead inductance
GROUNDING
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN402/IXDI402/IXDF402, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
In order for the design to turn the load off properly, the IXDN402
must be able to drain this 1.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN402
and its load. Path #2 is between the IXDN402 and its power
supply. Path #3 is between the IXDN402 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN402.
Say,forexample,weareusingtheIXDN402tochargea1500pF
capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=1500pF &
∆t=25ns, we can determine that to charge 1500pF to 25 volts
in 25ns will take a constant current of 1.5A. (In reality, the
charging current won’t be constant, and will peak somewhere
around 2A).
OUTPUTLEADINDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twisted-
pair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
ofthedriver,andconnecteddirectlytothegroundterminal
of the load.
SUPPLYBYPASSING
In order for our design to turn the load on properly, the IXDN402
must be able to draw this 1.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is an order of
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected and should have low inductance, low resistance and
high-pulse current-service ratings). Lead lengths may radiate
at high frequency due to inductance, so care should be taken
to keep the lengths of the leads between these bypass
capacitors and the IXDN402 to an absolute minimum.
9
IXDN402 / IXDI402 / IXDF402
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: sales@ixys.net
www.ixys.com
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108, Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: deiinfo@directedenergy.com
www.directedenergy.com
Doc #9200-0254 R2
10
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