IXFH14N100 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFH14N100 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFT/IXFX14N100 1000 V
IXFH/IXFT/IXFX15N100 1000 V
14 A 0.75 W
15 A 0.70 W
trr £ 200 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminarydatasheet
TO-247 AD
(IXFH)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
1000
1000
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
PLUS247TM
(IXFX)
ID25
IDM
IAR
TC = 25°C
14N100
15N100
14N100
15N100
14N100
15N100
14
15
56
60
14
15
A
A
A
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
(TAB)
(TAB)
G
D
EAR
TC = 25°C
45
5
mJ
TO-268 (D3)
(IXFT)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
PD
TJ
TC = 25°C
360
W
G
S
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
● Internationalstandardpackages
● Low RDS (on) HDMOSTM process
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
● Rugged polysilicon gate cell structure
● UnclampedInductiveSwitching(UIS)
rated
● Low package inductance
- easy to drive and to protect
● Fast intrinsic Rectifier
Md
1.13/10 Nm/lb.in.
Weight
6
g
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
●
DC-DC converters
Battery chargers
Switched-modeandresonant-mode
●
min. typ. max.
●
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
1000
2.5
V
V
powersupplies
DC choppers
● AC motor control
●
VGS(th)
4.5
●
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
Temperatureandlightingcontrols
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
●
1
mA
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
14N100
15N100
0.75
0.70
W
W
mounting clip or spring (PLUS 247TM)
●
Highpowersurfacemountablepackage
High power density
Pulse test, t £ 300 ms, duty cycle d £ 2 %
●
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97535B(1/99)
1 - 4
IXFH14N100
IXFH15N100
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
6
10
S
Ciss
Coss
Crss
4500
430
150
pF
pF
pF
td(on)
tr
td(off)
27
30
120
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2 W (External),
Dim. Millimeter
Inches
Min. Max. Min. Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
tf
30
ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Qg(on)
Qgs
Qgd
220
30
85
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
RthJC
RthCK
0.35 K/W
K/W
-
4.5
-
0.177
0.25
(TO-247 Case Style)
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087 0.102
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM (IXFX) Outline
Symbol
IS
TestConditions
VGS = 0 V
14N100
15N100
14
15
A
A
ISM
Repetitive;
pulse width limited by TJM
14N100
15N100
56
60
A
A
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
TJ = 25°C
200 ns
Dim.
Millimeter
Inches
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
350 ns
Min. Max. Min. Max.
IF = IS
-di/dt = 100 A/ms,
VR = 100 V
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
QRM
IRM
1
2
10
15
mC
mC
A
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
A
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
TO-268AA (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
Min. Recommended Footprint
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFH14N100
IXFH15N100
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
16
20
16
12
8
TJ = 125OC
VGS = 9V
VGS = 9V
TJ = 25OC
8V
7V
6V
8V
7V
6V
5V
12
8
5V
4V
4V
4
4
0
0
0
4
8
12
16
20
0
4
8
12
16
20
VDS - Volts
VDS - Volts
Fig.1 Output Characteristics
Fig.2 Output characteristics at elevated
temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
TJ = 125OC
V
GS = 10V
V
GS = 10V
ID = 15A
ID = 7.5A
TJ = 25OC
0
3
6
9
12
15
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Fig.3 RDS(on) vs. Drain Current
Fig.4 Temperature Dependence of Drain
to Source Resistance
20
16
12
8
14
12
10
8
IXF_15N100
IXF_14N100
6
TJ = 125oC
4
TJ = 25oC
4
2
0
0
-50 -25
0
25 50 75 100 125 150
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TC - Degrees C
VGS - Volts
Fig.5 Drain Current vs. Case Temperature
Fig.6 Input admittance
© 2000 IXYS All rights reserved
3 - 4
IXFH14N100
IXFH15N100
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
12
10
8
5000
2500
V
= 500V
ID=7.5A
IG=10mA
Ciss
DS
f = 1MHz
Coss
1000
500
6
4
Crss
250
2
0
100
0
0
40
80 120 160 200 240 280
Gate Charge - nC
5
10 15 20 25 30 35 40
VDS - Volts
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
40
32
24
16
8
TJ = 125OC
TJ = 25OC
0
0.4
0.6
0.8
VSD - Volts
Fig.9 Source current vs Source drain voltage.
1.0
1.2
1.4
1.6
1
0.1
Single pulse
0.01
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10 Transient Thermal Impedance
© 2000 IXYS All rights reserved
4 - 4
相关型号：
IXFH14N60P3
Power Field-Effect Transistor, 14A I(D), 600V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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