IXFK180N07 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFK180N07 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
IXFK 180N07
IXFX 180N07
VDSS = 70 V
ID25
RDS(on)
= 180 A
6 mΩ
=
Single MOSFET Die
trr ≤ 250 ns
Preliminary Data Sheet
PLUS247TM
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
70
70
V
V
D (TAB)
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
D
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
External lead (current limit)
TC = 25°C, Note 1
180
76
720
180
A
A
A
A
TO-264AA(IXFK)
IAR
TC = 25°C
G
D
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
S
G = Gate
D = Drain
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
S = Source
TAB = Drain
PD
TJ
TC = 25°C
560
W
Features
z International standard packages
z Low RDS (on) HDMOSTM process
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Md
Mounting torque
TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
g
g
10
Applications
z
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
z
z
Symbol
TestConditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
min. typ. max.
z
VDSS
VGS = 0 V, ID = 3mA
70
V
z
z
VGS(th)
VDS = VGS, ID = 8mA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
±100 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 µA
2 mA
z
PLUS 247TM package for clip or spring
mounting
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 2
6 mΩ
z
High power density
DS98556C(01/03)
© 2003 IXYS All rights reserved
IXFK 180N07
IXFX 180N07
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 10 V; ID = 60A
Note 2
55
90
S
Ciss
Coss
Crss
9400
4600
2550
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
65
90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
140
55
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
420
65
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
220
RthJC
RthCK
0.22 K/W
K/W
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.81
4.32
Symbol
TestConditions
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IS
VGS = 0 V
180
720
A
A
TO-264 AA Outline
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V, Note 1
1.3
V
trr
250 ns
IF = 50A,-di/dt = 100 A/µs, VR = 50 V
QRM
IRM
1.2
10
µC
A
Millimeter
Dim.
Inches
Min.
Max.
Min.
Max.
Note: 1. Pulse width limited by TJM
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
5.46BSC
.215BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
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