IXFK25N90 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFK25N90 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM Power MOSFETs
VDSS IDSS RDS(on)
trr
900 V 26 A 0.30 W 250 ns
900 V 25 A 0.33 W 250 ns
IXFK/IXFX26N90
IXFK/IXFX25N90
Single MOSFET Die
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
PLUS 247TM (IXFX)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
900
900
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
G
D
S
ID25
IDM
IAR
TC = 25°C
26N90
25N90
26N90
25N90
26N90
25N90
26
25
104
100
26
A
A
A
TO-264 AA (IXFK)
TC = 25°C, pulse width limited by TJM
TC = 25°C
25
G
(TAB)
D
S
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
G = Gate
D = Drain
S = Source
TAB = Drain
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Features
PD
TJ
TC = 25°C
560
W
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
• Lowpackageinductance
- easy to drive and to protect
• Fastintrinsicrectifier
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
10
g
g
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
900
3.0
V
V
• ACmotorcontrol
• Temperatureandlightingcontrols
VGS(th)
IGSS
VDS = VGS, ID = 8mA
5.0
VGS = ±20 V, VDS = 0
±200 nA
100 mA
Advantages
• PLUS 247TM package for clip or spring
mounting
IDSS
VDS = 0.8 •VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
• Space savings
• Highpowerdensity
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
26N90
25N90
0.3
0.33
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98553D(9/99)
1 - 4
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM (IXFX) Outline
VDS = 10 V; ID = 0.5 • ID25
Note 1
18
28
S
Ciss
Coss
Crss
8.7
10.8 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz
800 1000 pF
300
375 pF
td(on)
tr
td(off)
tf
60
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
130
24
Dim.
Millimeter
Min. Max. Min. Max.
Inches
Qg(on)
Qgs
240
56
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Qgd
107
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
RthJC
RthCK
0.22 K/W
K/W
0.15
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
Symbol
IS
TestConditions
VGS = 0 V
26N90
25N90
26
25
A
A
TO-264 AA (IXFK) Outline
ISM
Repetitive;
26N90
25N90
104
100
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = IS, -di/dt = 100 A/ms, VR = 100 V
QRM
IRM
1.4
10
mC
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
0.53
25.91 26.16
0.83
.021
1.020
.780
.033
1.030
.786
E
e
19.81 19.96
5.46 BSC
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 25N90
Figure 1. Output Characteristics at 25OC
Figure 2. Extended Output Characteristics at 125OC
50
20
15
10
5
T
= 25°C
V
= 9V
J
GS
T
= 25°C
V
= 9V
8V
J
GS
8V
7V
6V
40
30
20
10
0
7V
6V
5V
4V
5V
4V
0
0
4
8
12
16
20
0
2
4
6
8
10
VCE - Volts
VDS - Volts
Figure 4. Admittance Curves
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
30
25
30
25
20
15
10
5
V
= 9V
GS
T
= 125°C
J
8V
7V
6V
5V
20
TJ = 125OC
15
TJ = 25OC
10
5
4V
0
0
0
5
10
15
VDS - Volts
20
25
2
3
4
5
6
7
VGS - Volts
Figure 6. RDS(on) normalized to 0.5 ID25 value vs.
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
T
2.J4
2.4
V
= 10V
GS
V
= 10V
GS
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 26A
= 13A
D
T
= 125°C
J
I
D
T
= 25°C
J
25
50
75
100
125
150
0
10
20
30
40
50
TJ - Degrees C
ID - Amperes
© 2000 IXYS All rights reserved
3 - 4
IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
Figure 7. Gate Charge
Figure 8. Capacitance Curves
20000
10000
15
12
9
Ciss
V
= 500 V
= 13 A
= 10 mA
DS
D
G
I
I
f = 1MHz
Coss
Crss
1000
100
6
3
0
0
5
10 15 20 25 30 35 40
0
50 100 150 200 250 300 350
VDS - Volts
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic
Diode
Figure10. Drain Current vs. Case
Temperature
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
IXF_26N90
IXF_25N90
o
T
= 125 C
J
o
= 25 C
T
J
0
0
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75
1 00 1 25 1 50
Case Temperature - oC
VSD - Volts
Figure 11. Transient Thermal Resistance
0. 300
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4 - 4
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