IXFK50N50 [IXYS]
HiPerFET Power MOSFET; HiPerFET功率MOSFET型号: | IXFK50N50 |
厂家: | IXYS CORPORATION |
描述: | HiPerFET Power MOSFET |
文件: | 总4页 (文件大小:123K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HiPerFETTM
VDSS
ID25
RDS(on)
trr
IXFN 55N50 500V 55A
IXFN 50N50 500V 50A 100mΩ 250ns
IXFK 55N50 500V 55A 80mΩ 250ns
80mΩ 250ns
Power MOSFET
Single Die MOSFET
IXFK 50N50 500V 50A 100mΩ 250ns
Preliminary data sheet
TO-264AA(IXFK)
Symbol
TestConditions
Maximum Ratings
IXFK
IXFK
IXFN
IXFN
55N50
50N50
55N50
50N50
VDSS
VDGR
T
= 25°C to 150°C
500
500
500
500
V
V
TJJ = 25°C to 150°C
G
D (TAB)
D
S
VGS
Continuous
Transient
±20
±30
±20
±30
V
V
VGSM
miniBLOC,SOT-227B(IXFN)
ID25
IDM
IAR
T
= 25°C
55
220
55
50
200
50
55
220
55
50 A
200 A
50 A
TC =25°C,
E153432
S
TCC = 25°C
G
EAR
TC = 25°C
60
5
60
5
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
V/ns
S
D
PD
TC = 25°C
560
600
W
G = Gate
D
= Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
TL
1.6 mm (0.063 in) from case for 10 s
300 N/A
2500
°C
Features
VISOL
50/60 Hz, RMS
ISOL ≤ 1 mA
t = 1 min
t = 1 s
N/A
N/A
V~
V~
• International standard packages
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
I
3000
Md
Mounting torque
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Terminal connection torque
• Low R
HDMOSTM process
Weight
10
30
g
• RuggeDdS (pono) lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
TestConditions
CharacteristicValues
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
Applications
• DC-DC converters
• Battery chargers
VDSS
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±20V; VDS = 0V
500
2.5
V
VGS(th)
IGSS
4.5
V
• Switched-mode and resonant-mode
power supplies
±200
nA
• DC choppers
• Temperature and lighting controls
IDSS
V
= V
T = 25°C
TJJ = 125°C
25
2
µA
VGDSS = 0DVSS
mA
Advantages
RDS(on)
V
= 10 V, ID = 0.5 • ID25
55N50
50N50
80
mΩ
mΩ
NGoSte 1
100
• Easy to mount
• Space savings
• High power density
97502F (04/02)
© 2002 IXYS All rights reserved
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Symbol
TestConditions
Characteristic Values
TO-264 AA Outline
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 • ID25 Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
S
Ciss
Coss
Crss
9400
1280
460
pF
pF
pF
td(on)
tr
td(off)
tf
45
60
120
45
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
Dim.
Millimeter
Inches
Max.
.202
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.100
.079
.114
.083
Qg(on)
Qgs
Qgd
330
55
155
nC
nC
nC
b
b1
b2
c
D
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
E
e
J
RthJC
RthCK
TO-264AA
TO-264AA
0.22
0.15
K/W
K/W
5.46BSC
.215BSC
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
L1
P
Q
20.32
2.29
3.17
6.07
8.38
20.83
2.59
3.66
6.27
8.69
.800
.090
.125
.239
.330
.820
.102
.144
.247
.342
RthJC
RthCK
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
0.21
0.05
K/W
K/W
Q1
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-DrainDiode
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
miniBLOC, SOT-227 B
Symbol
IS
TestConditions
VGS = 0
55N50
50N50
55
50
A
A
ISM
Repetitive;
55N50
50N50
220
200
A
A
pulse width limited by TJM
VSD
IF = 100 A, VGS = 0 V
Note 1
1.5
V
trr
250
ns
µC
A
M4 screws (4x) supplied
QRM
IRM
IF = 25 A, -di/dt = 100 A/µs, VR = 100 V
1.0
10
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
100
80
60
40
20
0
140
120
100
80
VGS = 10V
TJ = 125OC
6V
VGS = 10V
TJ = 25OC
9V
8V
7V
9V
8V
7V
6V
5V
5V
60
40
20
0
0
4
8
12
VDS - Volts
16
20
24
0
4
8
12
16
20
24
VDS - Volts
Figure3.
RDS(on) normalized to 0.5
Figure 4. RDS(on) normalized to 0.5
ID25 value vs. TJ
ID25 value vs. ID
2.8
2.4
2.0
1.6
1.2
0.8
2.2
VGS = 10V
V
GS = 10V
2.0
1.8
1.6
1.4
1.2
1.0
TJ = 125OC
I
D = 55A
TJ = 25OC
ID = 27.5A
0
20
40
60
80
100
120
25
50
75
100
125
150
ID - Amperes
TJ - Degrees C
Figure5.DrainCurrentvs.CaseTemperature
Figure6. AdmittanceCurves
60
50
40
30
20
10
0
100
IXF_55N50
IXF_50N50
80
60
40
20
0
TJ = 125oC
TJ = 25oC
-50 -25
0
25 50 75 100 125 150
3.0
3.5
4.0
4.5
5.0
5.5
6.0
TC - Degrees C
V- Volts
© 2002 IXYS All rights reserved
IXFK50N50
IXFN50N50
IXFK55N50
IXFN55N50
Figure7. GateCharge
Figure8.CapacitanceCurves
12
10
8
10000
1000
100
Ciss
f = 1MHz
VDS = 250V
ID = 27.5A
Coss
6
4
Crss
2
0
0
50 100 150 200 250 300 350
0
5
10 15 20 25 30 35 40
Gate Charge - nC
VDS - Volts
Figure9. ForwardVoltageDropofthe
Intrinsic Diode
100
80
60
40
20
0
TJ = 125OC
TJ = 25OC
0.2
0.4
0.6
0.8
1.0
VSD - Volts
Figure10.TransientThermalResistance
1.00
0.10
0.01
0.00
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
相关型号:
IXFK52N30Q
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
IXYS
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