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IXFK52N60Q2_08 [IXYS]

HiPerFET Power MOSFETs Q2-Class; HiPerFET功率MOSFET Q2级
IXFK52N60Q2_08
型号： IXFK52N60Q2_08
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET Power MOSFETs Q2-Class
HiPerFET功率MOSFET Q2级
文件： 总2页 (文件大小：88K)
中文：  中文翻译
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Advance Technical Information  
HiPerFETTM  
Power MOSFETs  
Q2-Class  
IXFK52N60Q2  
IXFX52N60Q2  
VDSS = 600V  
ID25 = 52A  
RDS(on) ≤ 115mΩ  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
(TAB)  
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
52  
208  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
52  
4
A
J
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
(TAB)  
735  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque  
Mounting force  
(IXFK)  
(IXFX)  
1.13/10  
Nm/lb.in.  
N/lb.  
Features  
FC  
20..120 /4.5..27  
• Double metal process for low gate  
resistance  
• International standard packages  
• EpoxymeetUL94V-0, flammability  
classification  
Weight  
TO-264  
PLUS247  
10  
6
g
g
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Advantages  
Min. Typ.  
Max.  
• Easy to mount  
• Space savings  
• High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
600  
V
V
3.0  
5.5  
VGS = ± 30V, VDS = 0V  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25  
3
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
115  
mΩ  
DS98982B(05/08)  
© 2008 IXYS CORPORATION,All rights reserved  
IXFK52N60Q2  
IXFX52N60Q2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
30  
40  
S
Ciss  
Coss  
Crss  
6800  
1000  
225  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
23  
13  
ns  
ns  
ns  
ns  
56  
8.5  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
198  
43  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
94  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.15  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Source-Drain Diode  
Characteristic Values  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
TJ = 25°C unless otherwise specified)  
Q
Q1  
R
R1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
3.81  
1.78  
4.32  
2.29  
VGS = 0V  
52  
A
A
V
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
208  
1.5  
PLUS247TM (IXFX) Outline  
VSD  
trr  
QRM  
IRM  
250  
ns  
μC  
A
IF = 25A, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
1
10  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  

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