IXFK60N25Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFK60N25Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 60N25Q
IXFK 60N25Q
IXFT 60N25Q
VDSS = 250 V
ID25 = 60 A
RDS(on) = 47 mW
£ 250 ns
trr
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Low Gate Charge and Capacitances
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
250
250
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
60
240
60
A
A
A
TO-268 (D3) ( IXFT)
G
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
S
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
TO-264AA(IXF
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G = Gate
S = Source
Md
Mountingtorque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TAB = Drain
Weight
Symbol
TO-247
TO-264
TO-268
6
10
4
g
g
g
Features
• Low gate charge
• Internationalstandardpackages
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• EpoxymeetUL94V-0,flammability
classification
min. typ. max.
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
250
2
V
V
VGS(th)
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 mA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
47 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98630 (6/99)
1 - 2
IXFH 60N25Q IXFK 60N25Q
IXFT 60N25Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXFH) Outline
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
22
35
S
Ciss
Coss
Crss
5100
1000
400
pF
pF
pF
Dim. Millimeter
Inches
td(on)
tr
td(off)
tf
27
60
80
25
ns
ns
ns
ns
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
RG = 2.0 W (External),
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
Qg(on)
Qgs
180
39
nC
nC
nC
5.4
6.2 0.212 0.244
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
Qgd
90
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
RthJC
RthCK
0.35 K/W
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
TO-247
TO-264
0.25
0.15
K/W
K/W
N
1.5 2.49 0.087 0.102
TO-264 AA (IXFK) Outline
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
VGS = 0 V
60
A
A
ISM
Repetitive; pulse width limited by TJM
240
1.5
Dim.
Millimeter
Inches
VSD
IF = IS, VGS = 0 V,
V
Min.
Max.
Min.
Max.
Pulse test, t £ 300 ms, duty cycle d £ 2 %
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
trr
QRM
IRM
250
ns
mC
A
1
8
IF = IS -di/dt = 100 A/ms, VR = 100 V
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
TO-268AA (IXFT) (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
Q
Q1
R
3.17
6.07
8.38
3.81
1.78
3.66
6.27
8.69
4.32
2.29
.125
.239
.330
.150
.070
.144
.247
.342
.170
.090
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
R1
.75
.83
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
Min. Recommended Footprint
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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