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IXFK60N55Q2 [IXYS]

HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
IXFK60N55Q2
型号： IXFK60N55Q2
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

HiPerFET Power MOSFETs Q-Class
HiPerFET功率MOSFET Q系列
文件： 总2页 (文件大小：94K)
中文：  中文翻译
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Advanced Technical Information  
HiPerFETTM  
PowerMOSFETs  
Q-Class  
VDSS  
ID25  
RDS(on)  
= 550 V  
IXFK 60N55Q2  
IXFX 60N55Q2  
=
=
60 A  
88 mΩ  
trr ≤ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
Symbol  
TestConditions  
Maximum Ratings  
PLUS247TM (IXFX)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
550  
550  
V
V
VGS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D (TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
60  
240  
60  
A
A
A
G
D
EAR  
EAS  
TC = 25°C  
TC = 25°C  
75  
4.0  
mJ  
J
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
20  
V/ns  
TO-264 AA (IXF
PD  
TC = 25°C  
735  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
D (TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
Mountingtorque  
TO-264  
0.9/6 Nm/lb.in.  
Weight  
PLUS-247  
TO-264  
6
10  
g
g
Features  
z Double metal process for low gate  
resistance  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
z International standard packages  
min. typ. max.  
z
Epoxy meet UL 94 V-0, flammability  
classification  
VDSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8 mA  
550  
2.0  
V
V
z Avalanche energy and current rated  
z Fast intrinsic Rectifier  
VGS(th)  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
50 µA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
88 mΩ  
z
High power density  
DS98984(12/02)  
© 2002 IXYS All rights reserved  
IXFK 60N55Q2  
IXFX 60N55Q2  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
30  
44  
S
Ciss  
Coss  
Crss  
6900  
1150  
240  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
22  
14  
57  
9
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Terminals: 1-Gate  
2 - Drain (Collector)  
RG = 1.0 Ω (External),  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
200  
48  
nC  
nC  
nC  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
99  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
RthJC  
RthCK  
0.17 K/W  
K/W  
TO-264  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
TestConditions  
min.  
typ. max.  
TO-264 AA Outline  
VGS = 0 V  
60  
A
A
ISM  
Repetitive; pulse width limited by TJM  
240  
1.5  
VSD  
IF = IS, VGS = 0 V,  
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
250  
ns  
µC  
A
QRM  
IRM  
1
IF = 25A, -di/dt = 100 A/µs, VR = 100 V  
10  
Millimeter  
Dim.  
Inches  
Max.  
Min.  
Max.  
Min.  
.190  
.100  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.202  
.114  
.083  
A1  
A2  
.079  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  

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