IXFK69N30P [IXYS]
Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN;
| 型号： | IXFK69N30P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 69A I(D), 300V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：603K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTMHiPerFET
Power MOSFET
IXFH69N30P
IXFK69N30P
VDSS
ID25
= 300 V
= 69 A
RDS(on) = 49 mΩ
trr
≤ 200 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Symbol
TestConditions
Maximum Ratings
TO-247 (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
300
300
V
V
VGS
Continuous
Transient
20
30
V
V
D (TAB)
G
VGSM
D
S
ID25
IDM
TC = 25°C
69
A
A
TO-264 (IXFK)
TC = 25°C, pulse width limited by TJM
200
IAR
TC = 25°C
69
A
EAR
EAS
TC = 25°C
TC = 25°C
50
mJ
J
1.5
D (TAB)
G
D
S
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
G = Gate
S = Source
D = Drain
TAB = Drain
TC = 25°C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
z
z
z
Md
1.13/10 Nm/lb.in.
Weight
TO-247
TO-264
6
10
g
g
Advantages
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
Easy to mount
Space savings
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
300
V
V
z
z
High power density
2.5
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
49 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99220(12/04)
© 2004 IXYS All rights reserved
IXFH 69N30P
IXFK 69N30P
TO-247 AD Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
48
S
1
2
3
Ciss
Coss
Crss
4960
760
pF
pF
pF
190
td(on)
tr
td(off)
tf
25
25
75
27
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 4 Ω (External)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
Qg(on)
Qgs
156
32
180 nC
nC
A
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
Qgd
79
nC
b
b12
RthJC
RthCK
0.25 K/W
C
D
E
.4
.8
20.80 21.46
15.75 16.26
(TO-247)
(TO-264)
0.21
0.15
K/W
K/W
e
5.20
19.81 20.32
4.50
5.72 0.205 0.225
L
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Source-Drain Diode
Characteristic Values
Q
5.89
4.32
6.40 0.232 0.252
(TJ = 25°C, unless otherwise specified)
R
S
5.49
.170 .216
242 BSC
Symbol
IS
TestConditions
Min.
typ.
Max.
6.15 BSC
VGS = 0 V
69
A
A
V
TO-264 AA Outline
ISM
Repetitive
200
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
100
500
200 ns
nC
QRM
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.100
.079
.044
.094
.114
.021
1.020
.780
.202
A1
A2
.114
.083
b
.056
.106
.122
.033
1.030
.786
b1
b2
c
D
E
e
5.46BSC
.215BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
K
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
1.78
4.32
2.29
.150
.070
.170
.090
R1
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXFH 69N30P
IXFK 69N30P
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
180
160
140
120
100
80
70
60
50
40
30
20
10
0
VGS = 10V
9V
VGS = 10V
8V
7V
8V
7V
6V
5V
60
6V
5V
40
20
0
0
2
4
6
8
10 12 14 16 18 20
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
70
60
50
40
30
20
10
0
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
VGS = 10V
VGS = 10V
8V
7V
ID = 69A
6V
5V
ID = 34.5A
0.8
0.6
0.4
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.8
3.4
3
70
60
50
40
30
20
10
0
VGS = 10V
2.6
2.2
1.8
1.4
1
TJ = 125ºC
TJ = 25ºC
0.6
20
40
60
80 100 120 140 160 180
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXFH 69N30P
IXFK 69N30P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
TJ = -40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
-40ºC
4
4.5
5
5.5
6
6.5
7
0
20
40
60
80
100
120
140
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
200
VDS = 150V
ID = 34.5A
G = 10mA
180
160
140
120
100
80
I
60
TJ = 125ºC
40
TJ = 25ºC
20
0
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
0
20
40
60
80
100 120 140 160
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Forward-Bias Safe
Operating Area
Fig. 11. Capacitance
1000
10000
f = 1MHz
TC = 25ºC
RDS(on) Limit
C
C
iss
25µs
100
10
1
1ms
1000
100
oss
10ms
DC
C
rss
0
5
10
15
20
25
30
35
40
10
100
VD S - Volts
1000
V
- Volts
IXYS reserves the right to changeDlimS its, test conditions, and dimensions.
IXFH 69N30P
IXFK 69N30P
Fig. 13. Maximum Transient Thermal Resistance
1.00
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
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