IXFP5N100PM [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFP5N100PM |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
PolarTM HiPerFETTM
Power MOSFET
VDSS = 1000V
ID25 = 2.3A
RDS(on) ≤ 2.8Ω
IXFP5N100PM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
OVERMOLDED
(IXFP...M) OUTLINE
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
G
VDGR
Isolated Tab
D
S
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
G = Gate
D = Drain
S = Source
ID25
IDM
TC = 25°C
2.3
10
A
A
TC = 25°C, Pulse Width Limited by TJM
IA
TC = 25°C
TC = 25°C
5
A
EAS
300
mJ
Features
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
42
V/ns
W
z
Plastic overmolded Tab for Electrical
Isolation
Low RDS(on) and QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
z
z
z
z
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Advantages
Md
Mounting Torque
1.13 / 10
2.5
Nm/lb.in.
g
z
High Power Density
Easy to Mount
Weight
z
z
Space Savings
Applications
z
Switch-Mode and Resonant-Mode
Symbol
Test Conditions
Characteristic Values
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
z
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 30V, VDS = 0V
VDS = VDSS, VGS = 0V
1000
V
V
z
3.0
6.0
z
Robotics and Servo Controls
±100 nA
IDSS
10 μA
TJ = 125°C
750 μA
RDS(on)
VGS = 10V, ID = 2.5A, Note 1
2.8
Ω
© 2013 IXYS CORPORATION, All Rights Reserved.
DS100537(5/13)
IXFP5N100PM
Symbol
Test Conditions
Characteristic Values
OVERMOLDED TO-220 FULL PAK
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 2.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
2.4
4.0
S
Ciss
Coss
Crss
1830
113
20
pF
pF
pF
RGi
1.6
Ω
1
2
3
td(on)
tr
td(off)
tf
12
13
30
37
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 2.5A
RG = 5Ω (External)
Qg(on)
Qgs
33.4
10.6
14.4
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 2.5A
Qgd
Terminals: 1 - Gate
2 - Drain
RthJC
3.0 °C/W
3 - Source
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
5
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
20
1.3
200
trr
ns
A
IF = 5A, -di/dt = 100A/μs
IRM
QRM
7.4
VR = 100V, VGS = 0V
0.43
μC
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXFP5N100PM
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
VGS = 10V
8V
VGS = 10V
9V
8V
7V
7V
6V
6V
5V
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.8
2.4
2.0
1.6
1.2
0.8
0.4
VGS = 10V
8V
VGS = 10V
I D = 5A
7V
I D = 2.5A
6V
5V
0
3
6
9
12
15
18
21
24
27
30
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.5
VGS = 10V
TJ = 125ºC
2.0
1.5
1.0
0.5
0.0
TJ = 25ºC
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2013 IXYS CORPORATION, All Rights Reserved.
IXFP5N100PM
Fig. 7. Input Admittance
Fig. 8. Transconductance
6
5
4
3
2
1
0
4.5
4
TJ = - 40ºC
TJ = 125ºC
3.5
3
25ºC
- 40ºC
25ºC
125ºC
2.5
2
1.5
1
0.5
0
4.0
0.4
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
1.2
40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
10
9
8
7
6
5
4
3
2
1
0
VDS = 500V
I
I
D = 2.5A
G = 10mA
6
TJ = 125ºC
TJ = 25ºC
4
2
0
0
4
8
12
16
20
24
28
32
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
10,000
1,000
100
10
= 1 MHz
f
C
iss
1
C
oss
0.1
C
rss
10
0.01
5
10
15
20
25
30
35
0.0001
0.001
0.01
0.1
1
10
100
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS REF: F_5N100P(55-744)5-07-13-A
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